Aluminum doping method for silicon wafer

A technology of aluminum doping and silicon wafers, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of difficult removal and inapplicability of pure aluminum, and achieve the effects of low cost, easy realization, and simple preparation method

Active Publication Date: 2014-12-24
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing technology, in order to ensure a certain doping concentration, evaporation of pure aluminum is often used, and then laser ablation is used to form a metal-emitter-silicon substrate structure, but additional processes are required to remove the pure aluminum metal layer , because the thickness of the pure aluminum metal layer is relatively thick (generally on the micron scale), and pure aluminum itself is difficult to remove, so the above method is not suitable for the aluminum doping process before the metal interconnection

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A method for doping silicon with aluminum, comprising the steps of:

[0038] (1) Use a boron-doped p-type original silicon wafer, clean and chemically etch to remove the cutting damage layer;

[0039] (2) Carry out chemical corrosion to the cleaned silicon wafer to form a suede surface;

[0040] (3) use atomic layer deposition on the suede surface of the above-mentioned silicon wafer to deposit a 20 nm aluminum oxide film;

[0041] (4) Use a laser to locally ablate the surface of the coated silicon wafer, and form local aluminum doping in the thin layer on the surface of the silicon wafer; the laser is generated by a laser, and the laser is a green light of 532 nm with a frequency of 100KHz and a power of 4.5 W, scanning speed 5m / s, laser spot size 60 microns;

[0042] (5) Remove the remaining aluminum oxide film using chemical etching.

[0043] Test the sheet resistance of the laser action area: the laser action area has an extremely low sheet resistance of 10±2 Ω / □...

Embodiment 2

[0046] A method for doping silicon with aluminum, comprising the steps of:

[0047] (1) Use phosphorus-doped n-type original silicon wafers, clean and chemically etch to remove the cutting damage layer;

[0048] (2) Carry out chemical etching to the cleaned silicon wafer to form a polished surface;

[0049] (3) Depositing a 10 nm aluminum oxide film on the surface of the silicon wafer by atomic layer deposition;

[0050] (4) Use a laser to locally ablate the surface of the coated silicon wafer, and form local aluminum doping in the thin layer on the surface of the silicon wafer; the laser is generated by a laser, and the laser is a green light of 532 nm with a frequency of 625KHz and a power of 8.3 W, scanning speed 22m / s, laser spot size 35 microns;

[0051] (5) Remove the remaining aluminum oxide film using chemical etching.

[0052] Test the sheet resistance of the laser action area: the laser action area has an extremely low sheet resistance of 20±2 Ω / □; while the laser...

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Abstract

The invention discloses an aluminum doping method for a silicon wafer. The method includes following steps: firstly, cleaning a to-be-processed silicon wafer; secondly, depositing an alumina film on the surface of the silicon wafer, wherein the thickness of the alumina film is 1 to 50 nanometers; and finally, ablating the surface of the silicon wafer with the deposited alumina film by laser to form aluminum doping in a surface layer of the silicon wafer. The directly deposited alumina film is used as a source of the aluminum doping, and experiments show that emitters with high surface concentration aluminum doping can be obtained; and simultaneously, compared with usage of a pure aluminum layer, the alumina film can be removed conveniently by diluted hydrochloric acid during subsequent processes, so that contamination to the silicon wafer can be avoided.

Description

technical field [0001] The invention relates to an aluminum doping method for a silicon wafer, belonging to the technical field of semiconductors. Background technique [0002] Silicon material is currently the most important semiconductor material, and it is also the most basic material for the application of modern electronic components. The semiconducting properties of silicon are shown to have a medium forbidden band width, and the pure silicon material has poor conductivity. When silicon is doped, an n-type semiconductor that conducts electrons or a p-type semiconductor that conducts holes is formed. When p-type semiconductors and n-type semiconductors of different conductivity types are combined, a diode, triode or field effect transistor with rectification characteristics will be formed, which is the most basic device of electronic components. For an original p-type or n-type silicon substrate with a certain doping concentration, through different technological proc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/268
Inventor 孟夏杰王栩生章灵军
Owner CSI CELLS CO LTD
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