Method for determining coaxial configuration micro-discharging threshold value

A coaxial structure and micro-discharge technology, which is applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems that the velocity distribution and phase distribution are not considered, the characteristics of secondary electron emission cannot be described, and the calculation time is long.

Active Publication Date: 2013-01-16
XIAN INSTITUE OF SPACE RADIO TECH
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Problems solved by technology

[0004] However, the shortcomings of the above existing methods are mainly reflected in: (1) the velocity distribution and phase distribution when the electrons are actually emitted are not considered; (2) a fixed secondary electron emission model or simple fixed parameters to describe the secondary electron emission are used , so that the

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  • Method for determining coaxial configuration micro-discharging threshold value
  • Method for determining coaxial configuration micro-discharging threshold value
  • Method for determining coaxial configuration micro-discharging threshold value

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Embodiment Construction

[0074] The present invention will be further described in detail below in conjunction with specific embodiments.

[0075] Assuming that the outer diameter of the coaxial transmission line Ro=3.55mm, the inner diameter Ri=1.54mm, the radio frequency field frequency f=1.6GHz, the discharge gap d=Ro-Ri=2.01mm, the angular frequency ω=2πf=10 10 rad / s, applied voltage U between inner and outer conductors 0 =200V.

[0076] Let m=200, T=1 / 1.6GHz=0.625ns, h=3.125×10 -12 s. t 1，2，...，m =3.125×10 -12 s, 6.25×10 -12 s,..., 6.25×10 -10 s.

[0077] The structure diagram of the coaxial transmission line is as figure 2 As shown, the specific steps of the present invention are as follows:

[0078] Follow step one:

[0079] The internal electromagnetic field distribution when the coaxial transmission line transmits the main mode is:

[0080] E r = U 0 r ln ( R o / R i ) e j ( ωt - βz ) = E 0 r e j ( ωt - βz ) ...

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Abstract

The invention discloses a method for determining a coaxial configuration micro-discharging threshold value. The method comprises the following steps of: determining an electronic movement locus and an electronic movement speed in a coaxial structure; converting probability of an emergence speed satisfying Maxwellian distribution into a joint probability density function of transit time; respectively carrying out maximum value and monotonicity processing to four classes of probability density functions to obtain a processed joint probability density function; taking an electron collision kinetic energy as an incidence electron energy of a secondary electron emission characteristic of a material to obtain a secondary electron multiplication function generated during electron collision under the transit time; constructing a steady-state equation which satisfies the electron number during micro discharging; judging whether a voltage generates micro discharging by solving an effective secondary electron multiplication rate in the steady-state equation; and gradually calculating an effective multiplication rate of a next voltage with a bisection method, wherein a corresponding voltage is a micro-discharging threshold value when the effective multiplication rate is 1. According to the method disclosed by the invention, an accurate micro-discharging threshold value can be obtained, and meanwhile, the threshold value can be quickly obtained.

Description

Technical field [0001] The invention relates to a method for determining the micro-discharge threshold of a coaxial structure, which is suitable for the design of a microwave component of the coaxial structure without micro-discharge and the prediction of the micro-discharge threshold of the microwave component of the coaxial structure. Background technique [0002] The micro-discharge effect is also called the secondary electron multiplying effect, which means that the part is in 1×10 -3 When the pressure is Pa or lower, the resonance discharge phenomenon occurs under high power. High-power microwave components in the spacecraft load, such as output multiplexers, filters, switch matrices, antenna feeds, etc., are prone to micro-discharge effects. Once the micro-discharge effects occur, they will have serious consequences: the noise level will increase and the output power will decrease. ; The microwave transmission system’s standing wave ratio increases, the reflected power incr...

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Application Information

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IPC IPC(8): G06F19/00
Inventor 张娜崔万照林舒李永东
Owner XIAN INSTITUE OF SPACE RADIO TECH
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