Method for introducing solid impurities into silicon material under room temperature environment

Abstract

The invention discloses a method for introducing solid impurities into a silicon material under a room temperature environment. A solid impurity source is processed by using plasmas generated by inert gas under the room temperature environment, so that atoms or ions in the solid impurity source enter into the plasmas, the atoms or ions acquire kinetic energy through collision of positive ions and electrons in the plasmas, and then the atoms or ions enter into the silicon material. According to the method, due to the fact that high temperature is not needed, the method can be used for doping silicon wafers and can also be used for doping silicon devices, and compared with a traditional impurity introduction manner, the method is convenient and economical.

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a method for introducing solid impurities into silicon materials under room temperature conditions. Background technique

[0002] Impurities in silicon have a very important impact on the properties of silicon. It can be said that silicon has little application without impurities. The introduction of impurities into silicon materials is of great significance in the semiconductor industry. Introducing impurities such as phosphorus and arsenic into high-purity silicon can obtain n-type silicon, while introducing impurities such as boron into high-purity silicon can obtain p-type silicon. The introduction of acceptor impurities on the surface of n-type silicon, or the introduction of donor impurities on the surface of p-type silicon, can obtain silicon p-n junctions, which are the basis of many silicon devices. In addition, if the transition metal impurity gold or platinum i...

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