Method for implementing aluminum diffusion on silicon wafer

A technology of silicon wafer and silicon oxide, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of inability to achieve aluminum selective diffusion, poor uniformity and repeatability, and difficult precise control, so as to reduce product heat The effect of reducing leakage, improving controllability, and increasing product voltage

Inactive Publication Date: 2013-03-27
江苏卡迪诺节能保温材料有限公司
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, there are two major difficulties in aluminum diffusion on silicon: (1) There is no ideal aluminum impurity source (no aluminum gas source, no aluminum liquid source, no mature aluminum solid source), and the process technology leading to aluminum diffusion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] A method of implementing aluminum diffusion on a silicon wafer of the present invention comprises the following steps:

[0016] a. Texture the front of the silicon wafer, and then coat a layer of silicon oxide isolation film on the back of the silicon wafer. The thickness of the silicon oxide isolation film is 50nm;

[0017] b. Ion implantation step: choose solid AlCl 3 As an aluminum diffusion source, the solid aluminum source is heated to 120°C for sublimation under high vacuum, and argon is used as a carrier to load the solid aluminum source into the filament source area of ​​the ion implanter and collide with the electrons generated by the filament to form charged aluminum ions. The high voltage accelerates the charged aluminum ions, and the ions are screened by a magnetic analyzer, and aluminum impurities are further doped into the silicon wafer;

[0018] c. Clean the above-mentioned silicon wafer, put the silicon wafer into deionized water and ultrasonically remo...

Embodiment 2

[0022] A method of implementing aluminum diffusion on a silicon wafer of the present invention comprises the following steps:

[0023] a. Texture the front of the silicon wafer, and then coat a layer of silicon oxide isolation film on the back of the silicon wafer. The thickness of the silicon oxide isolation film is 65nm;

[0024] b. Ion implantation step: choose solid AlCl 3 As an aluminum diffusion source, the solid aluminum source is heated to 150°C for sublimation under high vacuum, and argon is used as a carrier to load the solid aluminum source into the filament source area of ​​the ion implanter and collide with the electrons generated by the filament to form charged aluminum ions. The high voltage accelerates the charged aluminum ions, and the ions are screened by a magnetic analyzer, and aluminum impurities are further doped into the silicon wafer;

[0025] c. Clean the above-mentioned silicon wafers, put the silicon wafers into deionized water and ultrasonically re...

Embodiment 3

[0029] A method of implementing aluminum diffusion on a silicon wafer of the present invention comprises the following steps:

[0030] a. Texture the front of the silicon wafer, and then coat a layer of silicon oxide isolation film on the back of the silicon wafer. The thickness of the silicon oxide isolation film is 80nm;

[0031] b. Ion implantation step: choose solid AlCl 3 As an aluminum diffusion source, the solid aluminum source is heated to 170°C for sublimation under high vacuum, and argon is used as a carrier to load the solid aluminum source into the filament source area of ​​the ion implanter and collide with the electrons generated by the filament to form charged aluminum ions. The high voltage accelerates the charged aluminum ions, and the ions are screened by a magnetic analyzer, and aluminum impurities are further doped into the silicon wafer;

[0032] c. Clean the above-mentioned silicon wafer, put the silicon wafer into deionized water and ultrasonically remo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for implementing aluminum diffusion on a silicon wafer. The method includes making a texture surface on the front surface of the silicon wafer, and coating a silicon oxide isolating membrane on the back surface of the silicon wafer; implanting ions, in other words, selecting solid AlCl<3> as an aluminum diffusion source, heating the solid aluminum source under a high-vacuum condition so that the solid aluminum source sublimates at the temperature of 120-170 DEG C, loading the solid aluminum source into a source region of a filament of an ion implanter by using argon as a carrier, enabling the solid aluminum source to be collided with electrons generated by the filament to form the charged aluminum ions, accelerating the charged aluminum ions by high voltage, screening the ions by a magnetic analyzer, and further doping aluminum impurities into the silicon wafer; cleaning the silicon wafer; dehydrating the cleaned silicon wafer by anhydrous ethanol and placing the silicon wafer in a drying oven at the temperature of 100-110 DEG C to dry the silicon wafer; and placing the dried silicon wafer in a diffusion furnace, heating the diffusion furnace so that the temperature of the diffusion furnace is 1250-1260 DEG C, and keeping the temperature constant for 10-12 hours. The method has the advantages that the total doping contents for ion implantation are accurately controlled, the precision and the repeatability of a diffusion process are improved, and a large-area uniform doping effect is realized.

Description

technical field [0001] The invention relates to a diffusion technology in the semiconductor preparation process, in particular to a method for implementing aluminum diffusion on a silicon chip, which belongs to the technical category of power semiconductor devices. Background technique [0002] In the manufacturing technology of high-voltage semiconductor devices such as thyristors and transistors, in order to achieve higher voltages, low-concentration deep junction diffusion is required, and the junction depth is required to be more than 80 microns. Based on this, the aluminum diffusion method is preferred. Aluminum in Silicon has the advantages of low impurity concentration and fast diffusion speed, which can realize high voltage and reduce the time for high temperature diffusion. At the same time, the atomic radius of aluminum matches the crystal lattice of silicon very well, and there are few defects in silicon after high temperature diffusion. But so far, there are two ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/265H01L21/02
Inventor 杨惠民
Owner 江苏卡迪诺节能保温材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap