Method for depositing high-K gate dielectric on atomic layer on surface of graphene

Abstract

The invention discloses a method for depositing high-K gate dielectric on an atomic layer on the surface of graphene, comprising the following steps: preparing a graphene material with a clean and smooth surface and few defects as a substrate sample for depositing high-k gate dielectric; putting the substrate sample in an ALD reaction chamber, and remotely controlling rays to make electron absorption energy of a P orbit of graphene jump, change outer electron orientation, damage a delocalized large-Pai bond and form a dangling bond; feeding water vapor to complete chemical adsorption on the surface of graphene until the surface of the substrate is saturated; and feeding a first precursor source to complete high-k gate dielectric deposition on the surface of graphene. According to invention, gamma rays are used to excite electrons and damage a delocalized large-Pai bond so as to improve the surface activity of graphene. The method for depositing high-K gate dielectric on an atomic layer on the surface of graphene is simple to implement and reliable. By adopting the method, a continuous, uniform and closely-combined high-k gate dielectric layer can be formed directly on the surface of graphene.

Description

technical field [0001] The invention belongs to the field of carbon-based integrated circuits, and in particular relates to a method for using radiation to excite electrons to deposit a high-k grid dielectric on the surface of graphene. Background technique [0002] With the development of the field of integrated circuits, the size of devices in the field of microelectronics is decreasing day by day, and the development of silicon-based integrated circuits originally used has reached a bottleneck. It is almost impossible to reduce the processing line width without degrading the performance of the product. More excellent new materials urgently need to be developed and applied. [0003] In order to reduce the device size while obtaining better integrated circuit devices, graphene, as a new type of material, has high expectations. Its ultra-high carrier mobility, excellent mechanical properties, thermal stability and good semiconductor properties make Graphene has become the f...

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Problems solved by technology

[0004]However, the deposition of high-k materials on graphene materials still faces two problems: 1) The large π bonds on the surface of graphene cause it to have no chemical The dangling bonds necessary for the adsorption of precursor sources are chemically inactive and cannot directly deposit high-k gate dielectrics on graphene; 2) In order to deposit high-k gate dielectrics on graphene, graphene is generally pretreated before deposition

Generally, electron beam evaporation is used to pretreat graphene by depositing a metal seed layer on graphene, but this method will cause great damage to the graphene lattice.

Some methods are to re-grow a layer of island-shaped graphene on the flat and defect-free graphene surface. The disadvantage is that the process is cumbersome, and during the growth process, good contact between the metal used for growth and the bottom graphene cannot be guaranteed.

However, the method of applying an electric field in the ALD reaction chamber will become difficult due to the limitations of the ALD reaction equipment itself, and it is difficult to realize it in a real sense.

In addition, the use of scanning electron microscopy (SEM) to grow amorphous carbon films requires additional equipment and high cost

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