58 results about "Phonon scattering" patented technology

The invention relates to a comprehensive optimization method and system for thermal conductive plastic performance in the technical field of new materials, and the method comprises the following steps: obtaining initial dispersion state data of an inorganic filler in thermal conductive plastic, and analyzing spatial distribution of filler particles through a scanning electron microscope to obtain characteristic parameters of random distribution of the filler; according to the characteristic parameters of the random distribution of the filler, calculating the heat transfer efficiency among filler particles by adopting a finite element simulation method, and determining the distribution rule of the phonon scattering phenomenon; according to the improved interface bonding strength parameters, the Monte Carlo method is adopted to simulate orientation distribution of filler particles in a matrix, and a preliminary scheme of filler orientation control is obtained; for optimization parameters of complex mold forming, a particle swarm optimization algorithm is adopted to adjust the filler proportion and distribution, and the structure configuration of the efficient three-dimensional heat conduction network is generated; and according to the structure configuration of the efficient three-dimensional heat-conducting network, the improvement degree of the heat-conducting plastic performance is analyzed and verified through a heat-conducting finite element, and final heat transfer efficiency data is obtained.

The invention relates to a field effect transistor channel mobility determination method and device and computer equipment. The method comprises the following steps: acquiring a transfer characteristic curve of a target field effect transistor; determining a target effective electric field intensity interval corresponding to the grid voltage of the target field effect transistor according to the transfer characteristic curve of the target field effect transistor; determining the transistor body mobility of the target field effect transistor according to the body mobility model; based on the target effective electric field intensity interval, the coulomb scattering mobility, the phonon scattering mobility and the surface roughness scattering mobility of the target field effect transistor are determined according to a target coulomb scattering mobility model, a target phonon scattering mobility model and a target surface roughness scattering mobility model; and determining the channel mobility of the target field effect transistor based on a channel mobility model. According to the scheme, the performance of the device can be quickly and effectively evaluated, complex analysis testing is avoided, and the development speed of the device process is increased.

The invention discloses a power semiconductor module residual life prediction method and device and a medium, and relates to the technical field of semiconductor life prediction, and the method comprises the steps: enabling collected material lattice parameters and thermodynamic working condition data to generate a transport data set through a molecular dynamics simulation method, and generating an inverted space group velocity tensor field according to the transport data set; generating a thermodynamic entropy change index according to the inverted space group velocity tensor field; performing time sequence accumulation analysis based on thermodynamic entropy change indexes, and outputting a phonon entropy change feature sequence; extracting a statistical feature subset and a dynamic gradient subset from the phonon entropy change feature sequence; constructing a pulse neural network and inputting the phonon entropy change feature sequence to generate an operation function; calling a transport equation and initializing based on the statistical feature subset to generate an initial transport equation; according to the method, the collision term of the transport equation is dynamically reconstructed through the pulse neural network, accurate modeling of the phonon scattering nonlinear effect is achieved, and the problem of mismatching of the heat transport model under the variable working condition is solved.

This invention discloses a method for preparing a side-chain liquid crystal photosensitive resin monomer with photo-oriented and thermally anisotropic properties and its application in 3D printing. Using 2,2-di(hydroxymethyl)propionic acid, isophorone diisocyanate, and hydroxyethyl methacrylate as raw materials, a side-chain liquid crystal photosensitive resin monomer is prepared and applied to 3D printing resin. Under the action of a 3D printing laser, the liquid crystal units in the side-chain liquid crystal photosensitive resin monomer of this invention form an oriented structure in the laser direction, allowing heat flow to be conducted along the oriented structure and effectively suppressing phonon scattering, thus exhibiting thermal anisotropy. Simultaneously, the side-chain liquid crystal photosensitive resin monomer with photo-oriented and thermally anisotropic properties of this invention exhibits good mechanical properties after 3D printing.

The invention relates to a chiral perovskite semiconductor circular polarization luminescence enhancement structure and a preparation method and application thereof, and belongs to the technical field of chiral photoelectric semiconductor materials and micro-nano devices. According to the structure, two layers of chiral perovskite semiconductor nanosheets are stacked through a controllable torsion angle to form a homojunction, and the torsion angle ranges from 0 degree to 90 degrees. According to the present invention, by adjusting the interlayer torsion angle, the continuous regulation and the significant enhancement of the circular polarization light emitting polarization degree are achieved, and especially during the parallel stacking (0 degree torsion angle), the circular polarization light emitting polarization degree is improved by 3 times compared with the single nanosheet and the vertical stacking (90 degree torsion angle). The enhancement effect is derived from inter-layer coupling dependent on a torsion angle, spin selective charge transfer is promoted, exciton binding energy is enhanced, and electron-phonon scattering is inhibited. The invention provides an effective way for regulating and controlling the polarization degree through the torsion angle, and is suitable for the fields of circular polarization luminescent devices, spin optoelectronic devices, quantum information processing and the like.

The invention belongs to the technical field of thermoelectric materials, and provides a composite P-type bismuth telluride-based material and a preparation method thereof in order to improve the thermoelectric performance of the thermoelectric materials, the composite P-type bismuth telluride-based material comprises a P-type bismuth telluride matrix with the chemical formula being Bi < 0.5 > Sb < 1.5 > Te < 3.2 > and a compound used for compounding, the chemical formula of the composite compound is selected from one or more of Cu2GeSe3, Ag8GeTe6 and Ag5Te3, and the chemical formula of the P-type bismuth telluride matrix is Bi < 0.5 > Sb < 1.5 > Te < 3.2 >. And the usage amount of the composite compound is 0.04-0.1% of the mass of the P-type bismuth telluride matrix. According to the P-type bismuth telluride-based composite material provided by the invention, crystal boundary, second phase and other defects are introduced after compounding to enhance phonon scattering, so that the lattice thermal conductivity is effectively reduced, and finally, the improvement of the material performance is realized by optimizing the carrier concentration and reducing the lattice thermal conductivity.

According to the gallium nitride-based semiconductor laser with the gradually-changed polarized optical phonon energy waveguide layer, a fitting curve of In ion strength distribution or In atom concentration distribution of an upper waveguide layer and a lower waveguide layer is tested through SIMS, and a fitting curve of polarized optical phonon energy distribution meets any function distribution of Log3P1, Lop2P2 and Biphase. The spatial continuous regulation and control of the phonon energy of the optical field are realized, so that the LO phonon energy is continuously and gradually changed along the propagation direction, the phonon energy gradient is formed, the LO phonon scattering is improved, the inelastic scattering and energy relaxation of carriers and LO phonons are inhibited, the carrier transportation and phonon scattering are optimized, the service life of the carriers and the gain retention time are prolonged, and the optical field performance is improved. According to the invention, the threshold current density is reduced, the thermal stability of the laser is improved, the use power and the use temperature of the laser are improved, meanwhile, the phonon energy valley value is matched with the quantum well gain peak, the scattering loss is inhibited, additional scattering caused by phonon energy mutation is avoided, the light field limitation is enhanced, and the slope efficiency is improved.

The application relates to a method for calculating the optical properties of a thermal control material in the mid-infrared waveband, and belongs to the field of thermal control material design of a spacecraft. The application aims to solve the problem that the existing mainstream calculation ideas are mainly focused on the related calculation in the sunlight waveband, and the calculation and research on the optical properties of the material in the mid-infrared waveband are relatively less. The method comprises the following steps: establishing a unit cell model, optimizing the structure model with high precision through a step-by-step optimization method, calculating a second-order force constant matrix, a BORN effective charge, a dielectric constant tensor, a third-order force constant matrix and a three-phonon scattering rate, determining an optical phonon vibration mode of a Brillouin zone center with infrared activity, calculating the dielectric function of the material according to a Lorentz oscillator model, and further calculating the refractive index and extinction coefficient of the material. The application significantly improves the calculation precision and efficiency of the optical properties of the thermal control material in the mid-infrared waveband, provides a reliable theoretical basis for the research and development of new materials, and can effectively reduce the experimental cost and shorten the research and development period.

The invention relates to the technical field of thermoelectric materials, in particular to a Bi2SeS2-based thermoelectric material and a preparation method and application thereof, the Bi2SeS2-based thermoelectric material takes Bi2SeS2 as a matrix, and the matrix is doped with a copper element and silicon carbide as a nano composite phase. According to the invention, the electric transport performance and the heat transport performance of the material are synchronously optimized through a synergistic strategy of Cu doping and SiC nano-compounding; cu doping effectively improves the carrier concentration and conductivity, SiC nano-compounding introduces a large number of nano-interfaces, the SiC nano-compounding and the point defects generated by Cu doping jointly construct a point defect-nano-interface multi-scale phonon scattering mechanism, and the lattice thermal conductivity is remarkably reduced. Moreover, the process for preparing the Bi2SeS2-based thermoelectric material is simple, the cost is low, the thermoelectricity of the Bi2SeS3 material at 773 K is successfully improved to 0.83, and a reliable way is provided for industrial application of the Bi2SeS2-based thermoelectric material.

The invention relates to the technical field of electrical contact materials, in particular to a copper-based electrical contact composite material for enhancing electric conductivity and heat conductivity through cobalt-mediated interface engineering and a preparation method of the copper-based electrical contact composite material. (2) adding the deoiled copper powder and a conductive polymer into an initiator solution or a buffer solution; (3) filtering and collecting the polymer and the cobalt-coated copper powder; (4) drying the collected composite material precursor; and (5) carrying out hot pressing or pressing sintering to obtain the modified copper-based electrical contact material. A conductive polymer and cobalt ions are complexed and assembled on the surface of copper powder, then high-temperature sintering is performed to obtain the copper-based composite material, and cobalt catalyzes formation of high-quality graphene; the heteroatom-doped graphene is prepared through high-temperature carbonization of the conductive polymer, and the carrier concentration and the interface energy band structure of the material are optimized; and the cobalt bridging copper-carbon interface reduces electron and phonon scattering and improves the electrical conductivity and thermal conductivity of the composite material.

The application discloses a method for calculating lattice thermal conductivity of rare earth oxide based on first principle. The method comprises the following steps: establishing a crystal structure model of the rare earth oxide, and constructing a supercell model after structure optimization; calculating second-order interatomic force constants by using a first principle method to obtain a phonon dispersion relation, and calculating third-order interatomic force constants to obtain a phonon scattering rate; solving the lattice thermal conductivity by using a Wigner transport equation, wherein the lattice thermal conductivity comprises a particle contribution described by a diagonal item of a phonon spectral function and a wave contribution described by a non-diagonal item, and the two are added to obtain a thermal conductivity contribution of each phonon mode; and integrating and summing all phonon modes in a Brillouin zone to output a frequency, temperature and direction dependence of the total lattice thermal conductivity. The application can accurately predict the lattice thermal conductivity and anisotropy of the rare earth oxide in a wide temperature range without an empirical parameter.

The invention discloses a p-type copper doped antimony bismuth tellurium thermoelectric material, a preparation method, a module and a system, and belongs to the technical field of thermoelectric materials. The chemical formula of the material is Bi < 0.5 > Sb < 1.5 > Te < 3 > Cu < x >, wherein x is equal to 0.0025. A trace amount of copper element is accurately doped into a Bi0. 5Sb1. 5Te3 matrix, so that the carrier concentration is remarkably improved, the bipolar effect is inhibited, and meanwhile, the lattice thermal conductivity is effectively reduced by utilizing point defects and the phonon scattering effect of second-phase CuTe, so that collaborative optimization of electrical and thermal properties is realized. The average dimensionless thermoelectric figure of merit (ZT) of the material in a temperature zone of 30-100 DEG C is up to 1.46, which is superior to that of the existing commercial material. The preparation method combines vacuum melting, ball milling and spark plasma sintering (SPS) processes, and is simple and convenient in process and high in repeatability. And further high-pressure torsion (HPT) post-treatment can further refine the grains and reduce the heat conductivity. The material is particularly suitable for an energy recovery and self-energized monitoring system of converter valve low-temperature waste heat.

This invention relates to the field of semiconductor device technology, specifically to a semiconductor laser element with a two-dimensional phonon and three-dimensional charge transport layer. The semiconductor laser element has a two-dimensional phonon and three-dimensional charge transport layer between the active layer and the upper waveguide layer, and between the active layer and the lower waveguide layer. This layer is a two-dimensional moiré superlattice structure composed of one or more of SnSe, AgSbT2, SnTe, ZrNiSn, Bi2Te3, and NbFeSb. This layer promotes electronic hybridization, introduces local strain modulation of phonon vibrations, enhances atomic order, reduces phonon scattering, and simultaneously enhances phase transition-induced electron orbital overlap and two-dimensional phonon and three-dimensional charge transport. It also reduces the valence band order of the laser, enhances carrier localization, hole transport, and stimulated emission of the laser element, lowers the excitation threshold of the laser element, enhances bipolar conductivity, improves continuous oscillation below room temperature, enhances the confinement factor and peak gain, reduces the laser voltage, and improves the optical power and slope efficiency of the laser element.

The invention discloses a mullite aerogel composite material with large size, high strength, wide temperature range and low thermal conductivity and a preparation method thereof. According to the composite material, a high-temperature-resistant fiber preform of which the surface is modified with a nano layer is used as a macroscopic framework, and the macroscopic framework and a silicon-aluminum molecular sieve / mullite nano matrix are chemically bonded to form a'macroscopic-mesoscopic-nano 'multistage synergistic enhancement structure. The preparation method comprises the following steps: growing an interface layer on the fiber surface in situ through a hydrothermal method; preparing silicon-aluminum composite sol; impregnating a fiber preform and gelling; and performing aging, supercritical drying and heat treatment to obtain a final product. Through an infrared shielding effect and a phonon scattering effect of a multi-heterogeneous interface, high-temperature radiation heat transfer and solid heat conduction are remarkably inhibited, so that the material has high strength, low heat conduction and 1500 DEG C high-temperature stability while keeping low density and high specific surface area, and preparation of a large-size complete block is successfully realized; the method has great application prospects in the fields of high-temperature heat insulation, industrial high-temperature catalysis or adsorption and the like.

The application relates to the technical field of pesticide controlled release, in particular to a preparation and application of a pesticide controlled release carrier, which comprises the following raw materials: a natural polymer matrix, a temperature-sensitive material, a light-heat material, an acid solvent, an alkali solvent and a pesticide. Chitosan (CS) is used as a natural polymer material which is widely sourced, non-toxic and naturally degradable, the spherical gel has the advantages of simple preparation, controllable particle size and rich surface chemical bonds, and is widely applied to drug adsorption and delivery. The introduction of nanoparticles can endow the polymer hydrogel with unique functional characteristics. Diamond nanodiamond (DND) is a nanoscale carbon allotrope which is composed of a sp3 carbon diamond core and a reconstructed sp2 carbon surface layer, can absorb light in the ultraviolet, visible and near-infrared regions in the form of phonon scattering / lattice vibration and convert it into heat, and has excellent photo-thermal performance. Poly-N-isopropyl acrylamide (PNIPAm) is a temperature-sensitive material which is in a sol state at room temperature and is converted into a gel state when close to body temperature.

The application relates to the technical field of thermoelectric materials, in particular to a MnTe alloying-regulated AgSbTe2-based thermoelectric material and preparation and application thereof. Through the MnTe alloying strategy, local composition fluctuation and lattice distortion are induced in the AgSbTe2 matrix, sub-micron scale Ag2Te second phases and Mn-Te enrichment regions are formed, intrinsic Ag / Sb cation disorder is combined, a multi-scale phonon scattering network is constructed, the propagation of phonons with different frequencies is effectively inhibited, the lattice thermal conductivity is significantly reduced, meanwhile, through carrier concentration optimization and Fermi level regulation, the Seebeck coefficient is effectively improved while the reasonable electrical conductivity is maintained, the power factor of the material is obviously improved, and therefore, the thermoelectric performance of the MnTe solid solution sample is significantly improved.

The invention relates to the technical field of functional materials, in particular to an n-type Mg3Sb2-based thermoelectric material with adjustable Bi content and a preparation method and application thereof, and the chemical structural formula of the Mg3Sb2-based thermoelectric material is Mg < 3.2 > Sb < 1.5-x > Bi < 0.49 + x > Te < 0.01 >. The composite material is prepared by combining vacuum solid-phase sintering with rapid hot pressing and subsequent annealing processes; by accurately regulating and controlling the content of the Bi element and utilizing the solid solution effect formed by replacing Sb with Bi, the conductivity and the power factor of the material are remarkably improved, meanwhile, phonon scattering is effectively enhanced, and the lattice heat conductivity is greatly reduced, so that collaborative optimization of electroacoustic transport performance is achieved, and finally the thermoelectric figure of merit ZT of the material is greatly improved in a medium-temperature region; and the peak value ZT can reach 1.1 or above. The material is simple and efficient in preparation process, the obtained sample is high in purity and good in compactness, large-scale industrial production is facilitated, and the material is suitable for thermoelectric energy conversion application.

A spectrophotometer includes a photonic source and a photonic detector, wherein a photonic beam from the photonic source is directed through an absorptive or reflective fluid of interest into a photonic detector. In the illustrative embodiment, the photonic source and the photonic detector are disposed on separate micro-platforms that are formed from the same layer of semiconductor material. The micro-platforms are suspended by nanowires that, in some embodiments, include phononic scattering elements. The phononic scattering elements increase the thermal isolation provided by the nanowires.

The invention discloses a thermal insulation molybdenum trioxide-molybdenum dioxide heterojunction / polyimide aerogel composite material and a preparation method thereof. A molybdenum trioxide nanobelt with a specific length-width ratio is accurately synthesized by utilizing a hydrothermal reaction; the controllable growth of the molybdenum trioxide-molybdenum dioxide heterojunction is realized through interface engineering, and a heterogeneous interface with an energy band matching characteristic is formed; then, the molybdenum trioxide-molybdenum dioxide heterojunction is compounded with polyamide acid, and the composite aerogel with a layered structure is prepared through a strong temperature gradient driven freezing assembly method and a freezing drying technology. By constructing a triple synergistic phonon scattering network of a molybdenum trioxide-molybdenum dioxide heterojunction interface, an organic-inorganic hybrid interface and a gas-solid porous interface, phonon scattering is effectively improved, and heat conductivity is reduced. The performance bottleneck of a traditional heat insulation material is broken through, and a brand new solution is provided for efficient heat management in an extreme environment.

The invention discloses a tin telluride-based thermoelectric material with low lattice thermal conductivity and a preparation method thereof, the tin telluride-based thermoelectric material with low lattice thermal conductivity has a chemical formula of Sn < 0.88 > Sb < 0.04 > Mn < 0.08 > Ge < 0.05 > Te-x% Cu < 2 > Te, and x < = 7. The preparation method comprises the following steps: weighing raw materials Sn, Te, Sb, Mn, Ge and Cu according to stoichiometry; the raw materials are transferred into a quartz tube after being mixed, vacuumized and sealed by oxyhydrogen flame; heating a quartz tube filled with the mixture, carrying out a melting reaction, and quenching in water after the reaction is finished to obtain a SnTe cast ingot; the SnTe cast ingot is ground into powder, the powder is put into a mold to be sintered, and the tin telluride-based thermoelectric material with the low lattice thermal conductivity is obtained. Non-toxic raw materials are adopted, the environmental protection property of the tin telluride-based thermoelectric material is guaranteed, meanwhile, a nano core-shell structure is formed in tin telluride through multi-element regulation and control doping and a proper process, and phonon scattering is greatly enhanced.

The invention discloses a Ca3Co4O9 thermoelectric fiber ceramic aerogel material with an infrared stealth characteristic and a preparation method of the Ca3Co4O9 thermoelectric fiber ceramic aerogel material, and belongs to the field of thermoelectric materials. A directional freezing pouring technology is adopted, a loose skeleton is constructed through Ca3Co4O9 nanofiber self-assembly, micron-sized through holes arranged in parallel are formed through directional freezing induction, a nano-sized secondary pore network is formed under ice crystal growth pushing, and finally the ultra-light, high-porosity and uniform-structure thermoelectric fiber ceramic aerogel material is prepared. The material has excellent thermoelectric performance, and the oriented through hole structure of the material increases phonon scattering and inhibits gas heat transfer by prolonging a solid heat conduction path in the direction perpendicular to a pore channel, so that the heat conductivity is remarkably reduced, and efficient heat insulation is achieved; and the thermal infrared stealth performance is greatly improved while the thermoelectric conversion capability is maintained. The method is simple in process, low in raw material cost and controllable in process, and the obtained material is pure in component and stable in performance and has important application value.

The application discloses a semiconductor green laser element, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer in sequence, wherein the upper waveguide layer and the upper limiting layer are provided with a topological phonon transition layer, and the topological phonon transition layer comprises a first topological phonon transition layer, a second topological phonon transition layer and a third topological phonon transition layer. The application realizes the synergistic regulation of phonon transport, reduces the phonon scattering of the laser element, enhances the lattice thermal conductivity, improves the thermoelectric performance of the laser element, improves the heat dissipation performance of the laser element, reduces the heat accumulation of the active layer, reduces the temperature of the active layer, reduces the hole injection barrier and improves the hole injection efficiency, improves the overlap probability of the electron-hole wave function of the active layer, thereby strengthening the laser element, improving the aging light attenuation, the aging life and the reliability under the condition of high power and large current, and improving the lasing power and the slope efficiency of the laser element.

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.

The application relates to the technical field of heat-conducting composite materials, and discloses a heat-conducting flexible composite phase change material as well as a preparation method and application thereof. The method comprises the following steps: modifying a thermoplastic elastomer by grafting maleic anhydride as a grafting agent; modifying a heat-conducting filler by surface hydroxylation with a strong base as a surface modifier; melt blending the grafted thermoplastic elastomer with a phase change material, and adding the surface-modified heat-conducting filler to crosslink, so as to obtain the heat-conducting flexible composite phase change material. By regulating and controlling the micro-interface structure of the filler-matrix, the interface interaction between the filler and the matrix is enhanced, the heat-conducting-support integrated structure is constructed, the interaction between the filler and the matrix is improved, the dispersion of the filler in the matrix is improved, the interface phonon scattering is reduced, the heat-conducting flexible composite phase change material has good heat-conducting performance, and meanwhile, the heat-conducting flexible composite phase change material also has strong mechanical performance and high energy storage density.

The invention discloses an epitaxial structure of a high-power quantum cascade laser suitable for a high-temperature working environment. The epitaxial structure comprises an InP substrate, an InP buffer layer, an InP lower limiting layer, an InGaAs lower waveguide layer, an InGaAs / InAlAs superlattice active region, an InGaAs upper waveguide layer, an InP upper limiting layer and an InP ohmic contact layer from bottom to top in sequence. The InGaAs / InAlAs superlattice active region comprises a lasing region and a relaxation region, the lasing region is a core region for electrons to generate laser through transition, the relaxation region is a channel for rapidly discharging the electrons through phonon scattering and injecting the electrons into the next lasing region, and the lasing region and the relaxation region are alternately cascaded to jointly realize an efficient process that one electron emits light for multiple times. Through a gradually-changed energy band structure, current carriers are prevented from escaping from a micro-strip above an upper lasing energy level, wave function overlapping between the high energy level and an upper excited state of an active region is reduced, current carrier leakage is inhibited, through effective strain compensation, net strain of an epitaxial material is reduced, and the requirements of a metal organic chemical vapor deposition epitaxial process are met.

The invention discloses a resonant tunneling diode rapid simulation method based on a multi-step method, and the method comprises the following steps: uniformly dividing a phase space according to the structure and size of a resonant tunneling diode, and selecting a time-dependent Wigner equation model which considers or does not consider phonon scattering to simulate a quantum tunneling process in a device; solving a time-dependent Wigner equation model for applying an external bias voltage through a numerical value by utilizing a numerical value format of a Galerkin spectrum method combining a multi-step method, a windward format and a sinchinger function as a primary function, and calculating corresponding current density by utilizing a numerical value solution of the Wigner function at each moment until the current density tends to be stable along with time; enabling the mean value of the steady-state current density of each point in each bias voltage point direction to be equivalent to the steady-state current of the bias voltage point, drawing a change curve of the steady-state current density mean value of the resonant tunneling diode along with the external bias voltage, simulating the negative differential resistance effect of the device, and carrying out the simulation of the current-voltage characteristic of the device.

The invention provides a negative electrode material and a preparation method and application thereof. The negative electrode material comprises an alloying negative electrode active material and a composite protection interface layer arranged on the surface of the alloying negative electrode active material, and the composite protection interface layer contains a cation substituted zirconium phosphate layered material. Through the structural design of the phonon scattering interface of the alloying type negative electrode material, the key problems that the stability of the interface structure is poor and the cycle performance is difficult to meet the application requirement due to stress concentration and volume expansion in the charging and discharging process of the alloying type negative electrode material are solved. The invention also provides a preparation method and application of the negative electrode material.

The application discloses a quantum transport-thermal transport-thermal stress coupling fast simulation method in a three-dimensional nano device. By solving the quantum transport equation, the heat conduction equation and the solid mechanics balance equation in the coupling mode space, the three-dimensional nano semiconductor device is simulated fast, and the calculation amount of solving the three-dimensional quantum transport equation is reduced. The method comprises the following steps: (1) using the non-equilibrium Green function method, solving the three-dimensional quantum transport equation in the coupling mode space while considering the thermal stress and the phonon scattering effect; (2) using the current density spectrum to calculate the heat source distribution and the current respectively; (3) based on the numerical method and the heat source distribution, solving the heat conduction equation and the solid mechanics balance equation to obtain the temperature distribution and the thermal stress distribution; (4) converting the thermal stress to the mode space, and substituting the temperature distribution and the thermal stress distribution into the quantum transport equation, and repeating steps (1)-(4) until convergence. The application provides a simulation method for the design and optimization of the three-dimensional nano semiconductor device.

The present application relates to the technical field of probabilistic bit device, and particularly relates to a single-molecule probabilistic bit device based on external circuit coupling, a preparation method and application, the single-molecule probabilistic bit device comprises a single-molecule junction formed by a graphene electrode pair and a probabilistic bit functional group, and a plurality of rigid benzene rings in a triphenylmethyl skeleton in the single-molecule junction realize high delocalization of unpaired electrons through a conjugated structure, effectively weakening the coupling effect between spin and molecular vibration, conformational fluctuation, inhibiting the rapid decoherence process caused by phonon scattering from the molecular structure level, so that the spin state can still maintain a limited coherence lifetime at room temperature, and the basic requirement of the device on the spin state holding time can be met.The device has randomness, controllability and scalability at the circuit level, and provides a hardware basis for constructing a brain-like probabilistic computing network.The preparation method provided by the present application is simple in process and is conducive to large-scale production.

The invention relates to the technical field of silver-coated copper powder, in particular to high-thermal-conductivity silver-coated copper powder particles and a preparation method thereof. Comprising the steps of pretreatment, plating solution preparation, copper powder plating, nanowire growth, surface modification, proportioning and mixing and the like, macroscopic gaps are reduced through grading, the contact probability is increased, point contact among particles is changed into surface contact and body contact by adding nanowire microstructures on the surface of a silver layer, the contact area and mechanical interlocking are improved, and the contact efficiency is improved. In addition, the heat transfer efficiency from a polymer matrix to the surface of the filler is improved through chemical bonding by means of surface modification, and interface phonon scattering is reduced.