This invention discloses a visible light extended InGaAs
detector and its fabrication method. According to this method, an internal structure is formed from bottom to top as p... + Type-contact
metal electrode,
oxide nitride passivation layer, p + Type InP
contact layer, n ‑ Type InGaAsP composition graded layer, n ‑ Type InGaAs absorber layer, n + A
photoelectric sensor based on a composite antireflective film
system of InP
contact layer and
nanostructure was developed, and InGaAs detectors were fabricated from it, which improved the performance of the device. It can effectively absorb light in the visible to short-wave
infrared band. At the same time, by combining layered thin films and nanostructures, the composite antireflective film
system was constructed using the effective medium theory and film stack formula. Compared with single-layer substrate
nanostructure film layer, it can effectively reduce the surface leakage current of InP
contact layer. Compared with traditional layered medium antireflection film, it also has certain wide-spectrum and wide-angle antireflection characteristics.