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Nanostructured and nanoporous film compositions, structures, and methods for making the same

A nanostructure and nanoporous technology, which is applied in the manufacturing of printed circuits, semiconductor/solid-state device manufacturing, and conductive pattern formation, etc., can solve the problems of no nanoporous membrane and no nanoporous

Inactive Publication Date: 2005-11-30
SIMON FRASER UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the '312 patent does not address nanoporous membranes, nor does it address the control of nanoporosity in such membranes, there remains a need to combine the facile and economical PMOD process for fabricating patterned membranes used in VLSIs with effective control of the membranes. A combination of nanoporosity methods

Method used

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  • Nanostructured and nanoporous film compositions, structures, and methods for making the same
  • Nanostructured and nanoporous film compositions, structures, and methods for making the same
  • Nanostructured and nanoporous film compositions, structures, and methods for making the same

Examples

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example 1

[0037] In the example of the first embodiment, the barium-titanium bimetallic alkoxide (nominal composition is BaTi(OR)x) precursor formula is obtained by adding a suitable solution (preferably 5-50% (w / w), can be 1 -90% (w / w)) is prepared by dissolving the precursor. The recipe was applied as described above in "Initial Basic Method for Precursor Deposition". The resulting film is then converted in a separate photolysis step. The resulting metal oxide films are processed under hydrothermal conditions, such as digestion of a solution in an autoclave in the presence or absence of a suitable catalyst at a selected pressure and temperature. The hydrothermal treatment produces a film with nanocrystalline domains in the form of an amorphous metal oxide matrix.

[0038] A second embodiment of the present invention for producing nanostructured films is achieved by using two or more components selected based on different photochemical conversion rates, as described below. In this e...

example 2

[0040] In the example of the second embodiment, from Ta(OEt) in MIBK (methyl isobutyl ketone) 4 (acac) (acac=2,4-pentanedionate) (18% by weight), and zirconium (IV) 2-ethylhexanoate (29% by weight) was used to pass the conventional spin coating method to coat the substrate. This step is followed by photolysis using deep UV radiation (preferably 254 nm) for 30 minutes, as described in US Pat. No. 5,534,332. The light source in this example could be a Xe (xenon) lamp or a Hg (mercury) vapor lamp such as an Oriel TM 100W high pressure Hg vapor lamp in a housing equipped with a condenser lens and a 10 cm water filter with quartz optics. HeCd lasers emitting light at 325nm and / or 416nm have useful properties as light sources associated with many metal complexes. The UV irradiation step mainly causes the tantalum film to react. This was followed by development with hexane for 5 minutes, thereby forming a pattern. Photolysis was performed for an additional 2 hours, resulting in ...

example 3

[0042] In another example of the second embodiment, barium 2-ethylhexanoate and Ti(OiPr) in MIBK 2 (acac) 2 (21.5% w / w and 18.5 w / w respectively) mixtures were used to coat silicon substrates by spin coating method. The coated substrate was exposed to deep UV radiation for 30 minutes. The latent image was developed using a lithographic method (ie, patterned exposure of the substrate) with a mixture of hexane and isopropanol (10:90), resulting in a patterned film.

[0043] In order to confirm the composition of the film, the obtained barium titanium oxide film sample was placed in a water bath at 30° C. for 30 minutes. Membrane samples were removed from the water, and the water was analyzed by inductively coupled plasma mass spectrometry (ICP-MS). The water showed high levels of barium and no titanium. This result indicates that barium is selectively leached from the sample and also shows speciation (eg, the formation of discrete domains) of barium oxide and titanium oxide ...

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Abstract

This invention comprises methods for making nanostructured and nanoporous thin film structures of various compositions. These films can be directly patterned. In these methods, precursor films are deposited on a surface and different components of the precursor film are reacted under selected conditions, forming a nanostructured or nanoporous film. Such films can be used in a variety of applications, for example, low k dielectrics, sensors, catalysts, conductors or magnetic films. Nanostructured films can be created: (1) using one precursor component and two reactions, (2) using two or more components based on differential rates of photochemical conversion, (3) using two precursors based on the thermal sensitivity of one precursor and the photochemical sensitivity of the other, and (4) by photochemical reaction of a precursor film and selected removal of a largely unreacted component from the film.

Description

[0001] Cross References to Related Applications [0002] This application is a continuation of related U.S. Patent Application Serial No. 09 / 918,908, filed July 31, 2001, which claims priority to Provisional Patent Application 60 / 221,844, filed July 28, 2000, each of The contents are incorporated herein by reference. technical field [0003] The present invention relates to membrane compositions, structural applications and methods of making nanostructured and nanoporous membranes of metals or metal oxides. These films are obtained from precursor formulations containing organometallic compounds. In this document, "nanostructured membrane" refers to a thin film structurally with nanoparticles or a thin film with nanoscale domain structure, while "nanoporous membrane" refers to a thin film with pores with diameters in the nanometer range. The present invention also relates to the use of such films in various applications including, but not limited to, films used in the microel...

Claims

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Application Information

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IPC IPC(8): C01G11/02C23C2/04C23C2/26C23C8/02C23C18/06C23C18/08C23C18/12C23C18/14C23C24/08C23C26/00C23C26/02C23C30/00G03F7/004H01L21/316H05K1/16H05K3/10
CPCC23C18/06H01L21/02337H01L21/02175H01L21/02282H01L21/02203C23C26/00H01L21/02194H05K1/162H01L21/02348C23C18/127H01L21/02189H01L21/31695C23C26/02C23C18/1216C23C24/08C23C18/1283C23C18/08C23C2/04C01G11/02C23C2/26C23C18/14H01L21/02183H05K3/105H01L21/31691C23C18/1204C23C8/02H01L21/02186C23C30/00C23C18/1279G03F7/0047C23C18/145C23C18/143B05D1/02B05D1/18B05D3/00
Inventor L·G·斯文森S·P·慕克吉P·J·小罗曼R·H·希尔H·O·马德森X·张D·霍赫茨
Owner SIMON FRASER UNIVERSITY
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