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56 results about "Scattering rate" patented technology

A formula may be derived mathematically for the rate of scattering when a beam of electrons passes through a material.

Underwater image enhancement processing method

The invention discloses an underwater image enhancement processing method. The method comprises steps of firstly, using the local shade of Gray algorithm to calculate background light of a to-be-processed image; based on an underwater image imaging model, judging whether to add information of a red channel into the dark channel prior by setting a threshold value; meanwhile, by considering the effects of an artificial light source, judging whether an artificial light source exists or not according to the foreground and background brightness of the image, and if the artificial light source exists, adding a saturation degree index and improving the dark channel prior; by use of the relation between the scattering coefficient and the wavelength, estimating the scattering rate, and according to attenuation coefficients of three channels, estimating the attenuation rate; and finally obtaining a restored clear image. According to the invention, disadvantages caused by the fact that the attenuation rates of blue and green channels are assumed to be consistent with each other in the current methods can be overcome; effects caused by the artificial light source, white objects and noise can be effectively avoided; contrast ratio of the image can be effectively enhanced; and a color cast problem caused by inaccurate estimation of the transmittivities of three channels can be well sovled.
Owner:TIANJIN UNIV

MonteCarlo simulation method suitable for studying scattering of alloy clusters in ZnMgO/ZnO heterostructure

The invention discloses a MonteCarlo simulation method suitable for studying scattering of alloy clusters in a ZnMgO / ZnO heterostructure. The method includes the following steps: 1, conducting calculation to obtain a ZnO and Zn1-xMgxO energy band structure, and analyzing a belt approximation by using five energy peaks; 2, conducting fitting to obtain the effective mass of five lowest energy peaks of ZnO and Zn1-xMgxO; 3, obtaining an electron wave function, quantization energy level and electron areal density of the ZnMgO / ZnO heterostructure; 4, building an MC model to simulate the transportation characteristic of the ZnMgO / ZnO heterostructure; 5, calculating the scattering rate of various scattering mechanisms; 6, conducting initialization on the wave vectors of all particles; 7, setting a particle number n and electric field intensity F; 8, making n plus 1; 9, judging the relationship between the particle number and the total number of simulation particles; 10, judging the simulated time is total simulation time or not; 11, calculating the steady-state drift speed of electrons and the electron mobility; 12, drawing a relation graph about the influence of alloy cluster scattering on the electron transportation characteristic. The obtained electron transportation characteristic is more accurate, and a reference is provided for reducing the influence of alloy cluster scattering on the electron transportation characteristic and improving the electron mobility characteristic.
Owner:XIDIAN UNIV

Complex curved surface shape error evaluating method

The invention discloses a complex curved surface shape error evaluating method. The method comprises performing interference detection on a complex curved surface to obtain surface shape data; secondly correcting the projection distortion of the surface shape data so that the spatial resolutions of the surface shape data in various direction can be consistent; thirdly, performing Zernike polynomial fitting on the corrected surface shape data to obtain low-frequency errors, according to a Zernike polynomial coefficient Zi, computing a low-frequency evaluating index of EL, wherein Ci represents the weight of every coefficient; fourthly, eliminating the low-frequency errors from the surface shape data, and then filtering out high-frequency errors through high-pass filtering to retaining intermediate-frequency errors; fifthly, evaluating the intermediate-frequency errors through a Slope RMS (root-mean-square) index; sixthly, computing the scattering rate of the high-frequency errors to obtain an evaluating index of the high-frequency errors; seventhly, if any of the three indexes above exceeds preset standards, determining that the surface shape errors of the complex curved surface are unqualified. The complex curved surface shape error evaluating method can effectively guide optical manufacturing production from the angle of imaging quality.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Multichannel liquid transmitting and scattering measuring device and method

The invention belongs to the technical field of optical radiation measurement and particularly relates to a multichannel liquid transmitting and scattering measuring device and method. The device is formed by arranging N single-channel cylinders in parallel; each single-channel cylinder includes an upper scattering light integration chamber and a lower transmitting light measurement chamber, the two chambers are isolated by an opaque partition and are measured by detectors respectively for the intensities of scattering light and transmitting light; all detectors are connected with external storage module and data processing module to provide remote transmission for measurement data, and transmitting and scattering rates of light of different wavelengths in a water body are measured through multiple channels at the same time; after laser of different wavelengths in each channel enter the cylinders of the measuring device, transmittance intensity of the laser is measured by the transmitting light measurement chamber and scattering intensity of the laser is measured by the scattering light measurement chamber, and therefore, the transmitting and scattering rates of the light of different wavelengths in a water body can be measured through multiple channels at the same time.
Owner:上海复展智能科技股份有限公司 +1

High-thermostability super-junction stress Si/SiGe heterojunction bipolar transistor

The invention discloses a super-junction stress Si/SiGe heterojunction bipolar transistor with a high thermostability. A SiGe virtual substrate structure is adopted by the transistor; and a Si<1-y>Ge<y> secondary collector region, a relaxation Si<1-y>Ge<y> collector region, a stress Si<1-x>Ge<x> base region and a stress Si emitter region are respectively and epitaxially grown on the SiGe virtual substrate structure. According to the transistor, by introducing a super-junction p-type layer parallel to the stress Si<1-x>Ge<x> base region to the relaxation Si<1-y>Ge<y> collector region, the purposes of improving the electric field distribution in a collector junction space-charge region, reducing the peak electronic temperature, inhibiting the impact ionization and improving a device breakdown voltage are achieved; and meanwhile, with the introduction of the super-junction p-type layer, the doping concentration and the phonon scattering rate of the relaxation Si<1-y>Ge<y> collector region are effectively reduced, and the thermal conductivity of the relaxation Si<1-y>Ge<y> collector region is improved; the transistor has the characteristics of large current gain and high breakdown voltage; the internal temperature distribution is significantly reduced, the characteristic frequency and the temperature sensibility are improved, and the high-thermostability work can be realized in a relatively wide working temperature range.
Owner:BEIJING UNIV OF TECH

OCT probe used for optical path automatic calibration

The invention discloses an OCT probe used for optical path automatic calibration. The OCT probe used for optical path automatic calibration comprises a grin-lens, one end of the grin-lens is provided with a refraction lens, the other end of the grin-lens is provided with a single-mode optical fiber, the side, far away from the refraction lens, of the refraction lens is provided with a sealing cap, the outside of the single-mode optical fiber is provided with a torque cable, the outsides of the grin-lens and the refraction lens are provided with high scattering rate heat shrink tubes, and the outsides of the high scattering rate heat shrink tubes are provided with protection sleeves. The high scattering rate heat shrink tubes are made of a heat shrinkable material PET, a small amount of optical scattering particles are doped in the PET material, the back scattering rate can be increased, thus the high scattering rate heat shrink tubes form a largest detectable peak of an image strength in an image signal, and the positions of a reference arm and a sample arm zero optical path difference can be easily identified. According to the OCT probe used for optical path automatic calibration, the mechanical strength of the OCT probe is improved, and the possibility that the OCT probe is used for a complex, narrow and curved diseased region is increased.
Owner:哈尔滨医科大学附属第二医院 +1

Parameter characterization device and detection method for surface defect of high reflection lens of laser gyro

The invention relates to a parameter characterization device and a detection method for the surface defect of the high reflection lens of a laser gyro. The device is composed of an integrating sphere,an integrating sphere detector, a CCD imaging assembly, a semiconductor laser, and a light trap. The CCD imaging assembly is composed of a CCD camera, a microlens, and a shading cylinder. The inner part of the shading cylinder is blackened. A movable top cover is arranged on the integrating sphere. A sample to be detected is clamped between a sample holder and the outer wall opposite to the top cover of the integrating sphere. The CCD imaging assembly is arranged right above the sample to be detected. The laser and the light trap are symmetrically arranged on the two sides of the CCD camera.A detector is arranged on the integrating sphere. According to the parameter characterization device and the detection method for the surface defect of the high reflection lens of a laser gyro, the problems in the prior art that the microscopic scattering detection can only acquire the two-dimensional information of the defects, and the integrated scattering rate measurement is long in detection time and low in detection efficiency are overcame.
Owner:XIAN TECHNOLOGICAL UNIV

PMMA light guide plate with double-sided dotted microstructures

The invention discloses a PMMA light guide plate with double-sided dotted microstructures. The PMMA light guide plate comprises a transparent plate body made of PMMA material. The transparent plate body is provided with a light emergent surface used for light emergence and a reflecting surface opposite to the light emergent surface. The reflecting surface is provided with multiple reflecting bulges which are identical in dimension. The light emergent surface is provided with multiple scattering bulges which are identical in dimension. The reflecting bulges and the scattering bulges are spherical-crown-shaped and arranged in the shape of plum blossoms, and are made of the PMMA material and integrated with the transparent plate body. The basal diameter and the height of the scattering bulges are respectively less than the basal diameter and the height of the reflecting bulges. Light conversion rate can be 80% or more without light guide particles so that conventional laser engraving process production is changed and production cost is reduced; the scattering bulges further scatter the light rays of the light emergent surface and emergent light uniformity can be 85% or more; the scattering bulges and the reflecting bulges and the transparent plate body are made of the same material and are integrated so that loss of the light rays can be avoided; and the scattering bulges and the reflecting bulges are arranged in the shape of plum blossoms so that space utilization rate can be enhanced and reflectivity and scattering rate can be guaranteed.
Owner:CHONGQING LINGCHUANGFU PHOTOELECTRIC TECH

High thermal stability superjunction strained si/sige heterojunction bipolar transistor

The invention discloses a super-junction stress Si / SiGe heterojunction bipolar transistor with a high thermostability. A SiGe virtual substrate structure is adopted by the transistor; and a Si<1-y>Ge<y> secondary collector region, a relaxation Si<1-y>Ge<y> collector region, a stress Si<1-x>Ge<x> base region and a stress Si emitter region are respectively and epitaxially grown on the SiGe virtual substrate structure. According to the transistor, by introducing a super-junction p-type layer parallel to the stress Si<1-x>Ge<x> base region to the relaxation Si<1-y>Ge<y> collector region, the purposes of improving the electric field distribution in a collector junction space-charge region, reducing the peak electronic temperature, inhibiting the impact ionization and improving a device breakdown voltage are achieved; and meanwhile, with the introduction of the super-junction p-type layer, the doping concentration and the phonon scattering rate of the relaxation Si<1-y>Ge<y> collector region are effectively reduced, and the thermal conductivity of the relaxation Si<1-y>Ge<y> collector region is improved; the transistor has the characteristics of large current gain and high breakdown voltage; the internal temperature distribution is significantly reduced, the characteristic frequency and the temperature sensibility are improved, and the high-thermostability work can be realized in a relatively wide working temperature range.
Owner:BEIJING UNIV OF TECH

A Monte Carlo Simulation Appropriate for Studying Alloy Group Scattering in znmgo/zno Heterojunction

The invention discloses a MonteCarlo simulation method suitable for studying scattering of alloy clusters in a ZnMgO / ZnO heterostructure. The method includes the following steps: 1, conducting calculation to obtain a ZnO and Zn1-xMgxO energy band structure, and analyzing a belt approximation by using five energy peaks; 2, conducting fitting to obtain the effective mass of five lowest energy peaks of ZnO and Zn1-xMgxO; 3, obtaining an electron wave function, quantization energy level and electron areal density of the ZnMgO / ZnO heterostructure; 4, building an MC model to simulate the transportation characteristic of the ZnMgO / ZnO heterostructure; 5, calculating the scattering rate of various scattering mechanisms; 6, conducting initialization on the wave vectors of all particles; 7, setting a particle number n and electric field intensity F; 8, making n plus 1; 9, judging the relationship between the particle number and the total number of simulation particles; 10, judging the simulated time is total simulation time or not; 11, calculating the steady-state drift speed of electrons and the electron mobility; 12, drawing a relation graph about the influence of alloy cluster scattering on the electron transportation characteristic. The obtained electron transportation characteristic is more accurate, and a reference is provided for reducing the influence of alloy cluster scattering on the electron transportation characteristic and improving the electron mobility characteristic.
Owner:XIDIAN UNIV
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