10 results about "Scattering rate" patented technology

A system and method is provided to characterize optical properties of a medium by determining a scattering rate of light through a medium, wherein determining the scattering rate of light through the medium is accomplished by utilizing polarized light transmitted from an optical source. The system and method performs a function based on the characterized optical properties of the medium, wherein the function is object ranging through the medium. One particular application of the function relates to assisting the landing and descent in altitude of a platform towards a surface in low-to-no visibility scenarios.

The invention discloses a rain clutter modeling method based on an electromagnetic scattering principle. Firstly, a radar emission signal model and a rain field model are constructed, and the rain field model comprises raindrop size, raindrop last speed and rainfall distribution; then, uniformly dividing the detection space into a plurality of scattering units; calculating the backscattering sectional areas of the raindrops, and further superposing the backscattering sectional areas of all the raindrops in the unit volume to obtain the scattering rate of the unit volume; according to the scattering rate per unit volume and the volume of the scattering unit, calculating the backscattering sectional area of the scattering unit; and finally, calculating the rain clutter echo signal of a single scattering unit, and superposing the rain clutter echo signals of all scattering units in the distance ring to obtain the rain clutter echo signal of the distance ring. And superposing the rain clutter echo signals of all distance rings to obtain a rain clutter echo signal in the detection space. According to the method, the modeling accuracy is improved, the calculation complexity is greatly reduced, and the method is suitable for large-scale real-time modeling.

The invention relates to the field of semiconductor material physical property regulation and control and power device optimization design, and particularly discloses a method for regulating and controlling the carrier mobility of beta-type gallium oxide (beta-Ga2O3) based on triaxial stress. Gallium oxide serving as a fourth-generation ultra-wide band gap semiconductor has high breakdown field strength and good stability, but the carrier mobility of the gallium oxide is low, and application of the gallium oxide in high-power devices is limited. The electron mobility of beta-Ga2O3 is improved from 85.8 cmV <-1 > s <-1 > to 170.9 cmV <-1 > S <-1 > by applying-4% of compressive strain to 4% of tensile strain and is improved by nearly 100%, and the mechanism that the energy band slope is increased, the group velocity is increased, the effective mass is reduced and the scattering rate is reduced due to stress is disclosed. The method is simple in process, low in cost and suitable for manufacturing high-performance wide-bandgap semiconductor power electronic devices.

The application discloses a method for calculating lattice thermal conductivity of rare earth oxide based on first principle. The method comprises the following steps: establishing a crystal structure model of the rare earth oxide, and constructing a supercell model after structure optimization; calculating second-order interatomic force constants by using a first principle method to obtain a phonon dispersion relation, and calculating third-order interatomic force constants to obtain a phonon scattering rate; solving the lattice thermal conductivity by using a Wigner transport equation, wherein the lattice thermal conductivity comprises a particle contribution described by a diagonal item of a phonon spectral function and a wave contribution described by a non-diagonal item, and the two are added to obtain a thermal conductivity contribution of each phonon mode; and integrating and summing all phonon modes in a Brillouin zone to output a frequency, temperature and direction dependence of the total lattice thermal conductivity. The application can accurately predict the lattice thermal conductivity and anisotropy of the rare earth oxide in a wide temperature range without an empirical parameter.

The application discloses a kind of super smooth optical element surface characteristic parameter prediction methods, it is related to optical element measurement technical field, comprising: the value range of each surface parameter is determined and sampling accuracy;Scattering rate distribution database is constructed, and preprocessing is carried out;Classification-parameter prediction two-step neural network is constructed, and training is carried out;Obtain the integral scattering rate distribution data of super smooth optical element, carry out surface PSD statistical distribution prediction and surface characteristic parameter prediction.The application realizes the accurate classification of surface PSD statistical distribution of super smooth optical element, and the high-precision prediction and evaluation of key parameters such as surface roughness, autocorrelation length, to provide a kind of brand-new solution for the performance evaluation and quality control of super smooth optical element.

The invention discloses an ultra-smooth optical element surface characteristic parameter prediction method, which relates to the technical field of optical element measurement, and comprises the following steps: determining the value range and sampling precision of each surface parameter; constructing a scattering rate distribution database, and performing preprocessing; constructing a classification-parameter prediction two-step neural network, and performing training; integral scattering rate distribution data of the ultra-smooth optical element are obtained, and surface PSD statistical distribution prediction and surface characteristic parameter prediction are carried out. According to the method, accurate classification of the PSD statistical distribution of the surface of the ultra-smooth optical element and high-precision prediction and evaluation of key parameters such as surface roughness and self-correlation length are realized, so that a brand new solution is provided for performance evaluation and quality control of the ultra-smooth optical element.

The application discloses a kind of ultra-smooth optical element surface characteristic parameter prediction method, comprising the following steps: step 1, based on MBK model, by comparing HS model and MBK model, establish GBK scalar scattering model;Step 2, based on GBK scalar scattering model, establish the relationship between the surface roughness and autocorrelation length and scattering rate of ultra-smooth and smooth optical element under the same incident angle;Step 3, based on two different incident angles, respectively measured corresponding incident angle under the scattering rate, by the relationship between surface roughness and autocorrelation length and scattering rate, obtain the set curve of surface roughness and autocorrelation length under different two incident angles, the intersection of two curves is the surface roughness and autocorrelation length of the optical element to be measured.The application is suitable for the rapid prediction of surface roughness and autocorrelation length of ultra-smooth and smooth optical element, with the characteristics of high prediction accuracy and high prediction efficiency.

A biological information measurement device includes: a scattering rate calculating unit configured to calculate a scattering rate of light at an interface between a medium present in a biological object or in a specimen and a particle included in the medium based on received-light intensity of light irradiated onto the biological object or onto the specimen and received via the biological object or via the specimen; and a concentration index calculating unit configured to calculate, based on a correlation between the scattering rate of the light at the interface and a concentration index corresponding to concentration of a target substance that is different from the particle included in the medium, the concentration index corresponding to the scattering rate of the light calculated by the scattering rate calculating unit.

The utility model relates to the technical field of glass detection, in particular to a detection device for high-transmittance low-scattering glass, which comprises a working box, a light receiver arranged in the working box, a light source arranged in the working box, and a fixing piece arranged right in front of the light source. A positioning plate is arranged below the fixing frame, and a supporting table is arranged below the positioning plate; the device has the beneficial effects that to-be-detected glass can be clamped at one end of the fixing piece, then the light source is started to enable light to penetrate through the glass to irradiate the light receiver, and the light receiver converts the light into an electric signal to be transmitted, so that the physical properties such as light transmittance and scattering rate of the glass are detected, and the to-be-detected glass can be clamped in the fixing frame; then the light source is started to irradiate light on the surface of the glass, and meanwhile, the angle and height of the whole glass can be adjusted through the synergistic effect of the supporting table, the fixing frame and the positioning plate, so that cracks, scratches and other defects on the surface of the glass can be more obviously checked, and multiple purposes are achieved through one machine.

The invention relates to the technical field of semiconductors, and discloses a hole mobility calculation method introducing strain-dependent optical deformation potential, which comprises the following steps: acquiring a structure parameter and a strain distribution parameter of a target semiconductor device; determining a strain-dependent optical deformation potential in the channel region of the target semiconductor device based on the strain distribution parameter, wherein the strain-dependent optical deformation potential represents the inhibition effect of strain-induced crystal symmetry breaking on the electroacoustic coupling strength; substituting the strain-dependent optical deformation potential into a carrier transport model, and calculating the carrier mobility limited by the optical phonon scattering mechanism in combination with the structural parameters; and simulating and predicting the electrical performance of the target semiconductor device based on the carrier mobility limited by the optical phonon scattering mechanism, and outputting a macroscopic electrical performance index. According to the method, the calculation deviation of the scattering rate in the high-strain state is corrected, and the prediction precision of TCAD software on the hole mobility is improved.