A Monte Carlo Simulation Appropriate for Studying Alloy Group Scattering in znmgo/zno Heterojunction

Abstract

The invention discloses a MonteCarlo simulation method suitable for studying scattering of alloy clusters in a ZnMgO / ZnO heterostructure. The method includes the following steps: 1, conducting calculation to obtain a ZnO and Zn1-xMgxO energy band structure, and analyzing a belt approximation by using five energy peaks; 2, conducting fitting to obtain the effective mass of five lowest energy peaks of ZnO and Zn1-xMgxO; 3, obtaining an electron wave function, quantization energy level and electron areal density of the ZnMgO / ZnO heterostructure; 4, building an MC model to simulate the transportation characteristic of the ZnMgO / ZnO heterostructure; 5, calculating the scattering rate of various scattering mechanisms; 6, conducting initialization on the wave vectors of all particles; 7, setting a particle number n and electric field intensity F; 8, making n plus 1; 9, judging the relationship between the particle number and the total number of simulation particles; 10, judging the simulated time is total simulation time or not; 11, calculating the steady-state drift speed of electrons and the electron mobility; 12, drawing a relation graph about the influence of alloy cluster scattering on the electron transportation characteristic. The obtained electron transportation characteristic is more accurate, and a reference is provided for reducing the influence of alloy cluster scattering on the electron transportation characteristic and improving the electron mobility characteristic.

Description

technical field [0001] The invention relates to simulating two-dimensional electron gas transport characteristics in ZnMgO / ZnO heterojunction, especially the Monte Carlo simulation of influence of alloy group scattering mechanism on electron transport properties under low-field and high-field conditions. Background technique [0002] In recent years, with the rapid development of wide bandgap semiconductor materials and device manufacturing processes, silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond (Diamond), titanium dioxide (TiO 2 ), Aluminum Nitride (AlN) and other new-generation wide-bandgap semiconductors have injected new vitality into the research of high-performance semiconductor devices and integrated circuits with their excellent material properties. Among these wide bandgap semiconductors, II-VI wide bandgap semiconductor ZnO, as another ideal semiconductor material after GaN, can form a MgZnO ternary compound semiconductor with a bandgap r...

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Problems solved by technology

[0003] At present, there are still several technical problems to be solved in the MC simulation of ZnMgO / ZnO heterojunction transport properties: 1) Alloy group scattering is a kind of scattering caused by the fluctuation of the channel electron energy level caused by the fluctuation of the alloy composition. The research shows that: This scattering has a great influence on the transport characteristics of heterojunctions such as AlGaN / GaN and InAlN / GaN, especially on the electron mobility characteristics of heterojunctions. 2) In the existing MC studies, the energy bands of ZnO and ZnMgO are approximated by the three-energy valley analytical band. In fact, in order to improve the accuracy of the simulation, more complex energy bands need to be considered. Belt model, such as the Wunenggu model

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