The invention relates to an epitaxial structure of a deep
ultraviolet semiconductor light emitting diode. The epitaxial structure sequentially includes a pattern substrate, a
semiconductor buffer layer, an n-type
semiconductor material layer, a multi-
quantum well layer, a p-type
electron blocking layer, and a p-type semiconductor
material transport layer along the epitaxial direction;
etching on the pattern substrate There are grooves. On each groove, a cavity structure is grown vertically upward. The cavity structure passes through the semiconductor buffer layer, n-type semiconductor material layer, and
multiple quantum well
layers. The top positions are the following three types: the first , aggregated in the p-type
electron blocking layer, the aggregation depth of the cavity in the p-type
electron blocking layer is 10-100nm, or, the second type, continue to pass through the p-type
electron blocking layer, and aggregate in the p-type semiconductor
material transport layer, The aggregation depth of the cavity in the p-type semiconductor
material transport layer is 10-500nm, or, the third type, continue to pass through the p-type
electron blocking layer and the p-type semiconductor material
transport layer, the cavity is not aggregated, and the p-type semiconductor material The surface of the transmission layer appears as circular holes. The invention can improve the internal
quantum efficiency of the deep-
ultraviolet LED; and the cavity structure is incorporated into the
quantum well, which can effectively improve the
light scattering characteristics and improve the light extraction efficiency of the deep-
ultraviolet light-emitting
diode.