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30results about How to "Improve scattering efficiency" patented technology

Self-stimulated Raman scattering laser of In-Band pump

The invention discloses a self-stimulated Raman scattering laser of an In-Band pump, which comprises a laser pump source, a laser energy transfer optical fiber, a first planoconvex lens for collimation, a second planoconvex lens for focusing, a reflection mirror of a resonator cavity, a laser gain dielectric crystal, a laser output mirror and a laser collimating mirror which are sequentially arranged, wherein pump light outputted by the laser pump source is transmitted to the first planoconvex lens via the laser energy transfer optical fiber, collimated by the first planoconvex lens, focused by the second planoconvex lens and further focused on the end surface of the laser gain dielectric crystal, the laser gain dielectric crystal produces stimulated radiation after absorbing the pump light, when the radiation of fundamental frequency light in the resonator cavity exceeds the self-stimulated Raman scattering threshold of the laser gain dielectric crystal, the produced Raman laser is collimated and outputted by the laser collimating mirror. The self-stimulated Raman scattering laser can improve the self-stimulated Raman scattering conversion rate, eliminate the thermal relaxation process from the pump energy level to the laser energy level of electrons of the conventional pump way, improve the quantum efficiency, reduce the heat and increase the self-stimulated Raman scattering conversion rate.
Owner:TIANJIN UNIV

Directly-pumping self-stimulated Raman scattering human eye safe waveband laser

The invention discloses a directly-pumping self-stimulated Raman scattering human eye safe waveband laser. The laser comprises a laser pumping source, a laser energy transmission fiber, a plano-convex lens collimator, a plano-convex focus lens, a cavity reflector, a laser gain medium crystal, a laser output mirror and a laser collimating lens, wherein pumping light output by the laser pumping source is transmitted to the plano-convex lens collimator through the laser energy transmission fiber; after being collimated, the pumping light is focused on the end face of the laser gain medium crystal through the plano-convex focus lens; the laser gain medium crystal absorbs the pumping light and generates stimulated radiation with a waveband of 1.3 microns; and when the radiation with the waveband of 1.3 microns surpasses a self-stimulated Raman scattering threshold value of the laser gain medium crystal, generated human eye safe waveband laser with the waveband of 1.5 microns is collimated and output by the output mirror. The laser has the advantages of enhancing self-stimulated Raman scattering conversion rate in the waveband of Nd3+1.3 microns, eliminating thermal relaxation process of electronics from a pumping energy grade to a laser energy grade in a conventional pumping mode, enhancing quantum efficiency and reducing heat.
Owner:TIANJIN UNIV

Method for preparing three-dimensional bismuth ferrite visible light catalytic material by using direct-write forming technology

The invention provides a method for preparing a three-dimensional bismuth ferrite visible light catalytic material by using a direct-write forming technology. The method comprises the following steps: providing and dissolving ferric nitrate, bismuth nitrate, nitric acid and potassium hydroxide into a mixed solution, and preparing bismuth ferrite nano powder through a hydrothermal synthesis method; after mixing the bismuth ferrite nano powder with an additive, adding the mixture into deionized water, and preparing bismuth ferrite mixed slurry of which the solid phase content is 40 to 80 wt percent; pre-designing a three-dimensional structural drawing through CAD (Computer Aided Design) software, converting the three-dimensional drawing into a code language capable of being recognized by a computer, putting the bismuth ferrite mixed slurry in a forming needle cylinder, enabling the forming needle cylinder to move along a path designated by the computer under the driving of a direct-write platform, extruding and forming layer by layer at the same time, periodically overlaying back and forth, and forming a mult-layer ordered three-dimensional porous structure blank; carrying out pre-sintering and sintering thermal treatment on the three-dimensional porous structure blank, thus obtaining a three-dimensional bismuth ferrite body having a visible light photocatalysis characteristic.
Owner:SHENZHEN UNIV

Self-stimulated Raman scattering laser of In-Band pump

The invention discloses a self-stimulated Raman scattering laser of an In-Band pump, which comprises a laser pump source, a laser energy transfer optical fiber, a first planoconvex lens for collimation, a second planoconvex lens for focusing, a reflection mirror of a resonator cavity, a laser gain dielectric crystal, a laser output mirror and a laser collimating mirror which are sequentially arranged, wherein pump light outputted by the laser pump source is transmitted to the first planoconvex lens via the laser energy transfer optical fiber, collimated by the first planoconvex lens, focused by the second planoconvex lens and further focused on the end surface of the laser gain dielectric crystal, the laser gain dielectric crystal produces stimulated radiation after absorbing the pump light, when the radiation of fundamental frequency light in the resonator cavity exceeds the self-stimulated Raman scattering threshold of the laser gain dielectric crystal, the produced Raman laser is collimated and outputted by the laser collimating mirror. The self-stimulated Raman scattering laser can improve the self-stimulated Raman scattering conversion rate, eliminate the thermal relaxation process from the pump energy level to the laser energy level of electrons of the conventional pump way, improve the quantum efficiency, reduce the heat and increase the self-stimulated Raman scatteringconversion rate.
Owner:TIANJIN UNIV

Deep ultraviolet semiconductor light emitting diode epitaxial structure

The invention relates to a deep ultraviolet semiconductor light emitting diode epitaxial structure. The epitaxial structure sequentially comprises a patterned substrate, a semiconductor buffer layer, an n-type semiconductor material layer, a multi-quantum well layer, a p-type electron blocking layer and a p-type semiconductor material transmission layer in an epitaxial direction, wherein grooves are etched in the patterned substrate, a cavity structure vertically grows upwards on each groove, and the cavity structures penetrate through the semiconductor buffer layer, the n-type semiconductor material layer and the multi-quantum well layer. The top part positions of the cavity structures are divided into the following three types: the first type is that the cavity structures are polymerized on the p-type electron barrier layer, and the polymerization depth of the cavities in the p-type electron barrier layer is 10-100 nm; or the second type is that the cavity structures continuously penetrate through the p-type electron barrier layer and are polymerized on the p-type semiconductor material transmission layer, and the polymerization depth of the cavities in the p-type semiconductor material transmission layer is 10-500 nm; or the third type is that cavity structures continuously penetrate through the p-type electron barrier layer and the p-type semiconductor material transmission layer, cavities are not polymerized, and round holes appear in the surface of the p-type semiconductor material transmission layer. According to the deep ultraviolet semiconductor light emitting diode epitaxial structure, the internal quantum efficiency of the deep ultraviolet LED can be improved; and the cavity structures are incorporated into quantum wells, so that the scattering feature of light can be effectively improved, and the light extraction efficiency of the deep ultraviolet light-emitting diode is improved.
Owner:HEBEI UNIV OF TECH

Patterned substrate, preparation method thereof, light emitting diode and preparation method of light emitting diode

The invention discloses a patterned substrate, a preparation method thereof, a light emitting diode and a preparation method of the light emitting diode. In one embodiment, the patterned substrate comprises a substrate and a plurality of patterned structures which are formed on the surface of the substrate and are periodically and tightly arranged, and the minimum distance between the adjacent patterned structures is smaller than or equal to 0.1 [mu]m; the pattern structure comprises a first part formed on the surface of the substrate and a second part formed above the first part, and the first part comprises a cylindrical part, and a first protruding part and a second protruding part which are uniformly distributed around the cylindrical part; and the first protruding parts and the second protruding parts are arranged at intervals, and the cross section area of the first protruding parts is larger than or equal to that of the second protruding parts. Therefore, the patterned substrate and the light emitting diode provided by the invention can effectively reduce the area and dislocation density of the epitaxial crystal surface and improve the light emitting efficiency; and the scattering efficiency of the light can be further improved, and the brightness of the LED is improved.
Owner:FUJIAN JING AN OPTOELECTRONICS CO LTD

LED fluorescent lamp with large light emitting angle

The invention discloses an LED fluorescent lamp with a large light emitting angle, and belongs to the technical field of LED illumination lamps. The LED fluorescent lamp comprises an optically designed lamp cover, and a lamp holder with a circularly arched cross section, wherein the lamp cover and the lamp holder are buckled to take a cylindrical shape; a lamp tube inner hole forms an accommodating space; an aluminum baseplate clamping groove, a bar-shaped aluminum baseplate, a light emitting module, a barb, a lamp cover clamping groove and a heat dissipating aluminum piece are arranged in the accommodating space; the splayed heat dissipating aluminum piece is connected to the two ends of the aluminum baseplate clamping groove; the aluminum baseplate clamping groove and the heat dissipating aluminum piece are connected as an integrated structure; the inclination of the heat dissipating aluminum piece is within 180-240 degrees; and the radian of the lamp cover is larger than the radian of the lamp holder. Light rays are fully reflected and diffused through the specially designed lamp cover, so that the light emitting rate reaches 94%; the light emitting angle reaches 180-240 degrees through the heat dissipating aluminum piece with adjustable inclination angle; and the LED fluorescent lamp with the large light emitting angle improves the scattering efficiency, increases the light emitting angle of the light rays, reduces the irradiation dead angle, and enhances the light emitting strength and uniformity of the lamp cover.
Owner:江苏盛弘光电科技有限公司

A deep ultraviolet semiconductor light-emitting diode epitaxial structure

The invention relates to an epitaxial structure of a deep ultraviolet semiconductor light emitting diode. The epitaxial structure sequentially includes a pattern substrate, a semiconductor buffer layer, an n-type semiconductor material layer, a multi-quantum well layer, a p-type electron blocking layer, and a p-type semiconductor material transport layer along the epitaxial direction; etching on the pattern substrate There are grooves. On each groove, a cavity structure is grown vertically upward. The cavity structure passes through the semiconductor buffer layer, n-type semiconductor material layer, and multiple quantum well layers. The top positions are the following three types: the first , aggregated in the p-type electron blocking layer, the aggregation depth of the cavity in the p-type electron blocking layer is 10-100nm, or, the second type, continue to pass through the p-type electron blocking layer, and aggregate in the p-type semiconductor material transport layer, The aggregation depth of the cavity in the p-type semiconductor material transport layer is 10-500nm, or, the third type, continue to pass through the p-type electron blocking layer and the p-type semiconductor material transport layer, the cavity is not aggregated, and the p-type semiconductor material The surface of the transmission layer appears as circular holes. The invention can improve the internal quantum efficiency of the deep-ultraviolet LED; and the cavity structure is incorporated into the quantum well, which can effectively improve the light scattering characteristics and improve the light extraction efficiency of the deep-ultraviolet light-emitting diode.
Owner:HEBEI UNIV OF TECH
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