30results about How to "Improve scattering efficiency" patented technology

A method and apparatus for improving the sensing of a physical parameter using a distributed optical waveguide and scattering. The optical waveguides have improved scattering efficiency and / or improved light capturing capability provided by multi-cladding layers and a tightly confining core waveguide. The core can be highly doped with a material such as germanium to improve scattering. The cladding layers provide a multi-mode waveguide for capturing scattered light. Such optical waveguides are useful in systems that rely on Rayleigh, Raman and Brillouin scattering.

In one aspect, the invention provides a titanium dioxide pigment. The titanium dioxide pigment comprises a plurality of titanium dioxide particles, and a polymer deposited on the titanium dioxide particles for inhibiting agglomeration of the titanium dioxide particles in an aqueous based coating formulation. The titanium dioxide particles have anchoring moieties associated therewith for facilitating anchoring of the polymer to the particles. The polymer is a copolymer having anchoring groups for attaching to the anchoring moieties associated with the titanium dioxide particles and hydrophobic end groups for attaching to the resin of the coating formulation. In another aspect, the invention provides a method of manufacturing a titanium dioxide pigment.

An optical measurement of a crystalline sample to be measured. The sample is irradiated with an exciting light from the polarization direction in which the Raman scattering is prohibited by the selection rule. When a metal probe is brought to proximity to the sample to be measured, the selection rule is eased locally only in the proximity portion near the probe end in order that Raman scattering becomes active. Thus, a Raman signal only from the proximity portion near the probe end is detected. An optical measurement apparatus having an optical arrangement for measuring a signal light re-emitted from a sample to be measured when the sample is irradiated with an exciting light is provided. The optical measurement apparatus comprises a means for limiting the polarization state of the exciting light or signal light and a means for bringing a metal probe near the sample to be measured. The optical measurement apparatus is used to measure the signal light obtained by locally easing the limitation on the polarization state by bringing the metal probe near the sample. Therefore, Raman scattering light from silicon or the like can be measured with high space-resolution exceeding the light diffraction limit.

The invention discloses a self-stimulated Raman scattering laser of an In-Band pump, which comprises a laser pump source, a laser energy transfer optical fiber, a first planoconvex lens for collimation, a second planoconvex lens for focusing, a reflection mirror of a resonator cavity, a laser gain dielectric crystal, a laser output mirror and a laser collimating mirror which are sequentially arranged, wherein pump light outputted by the laser pump source is transmitted to the first planoconvex lens via the laser energy transfer optical fiber, collimated by the first planoconvex lens, focused by the second planoconvex lens and further focused on the end surface of the laser gain dielectric crystal, the laser gain dielectric crystal produces stimulated radiation after absorbing the pump light, when the radiation of fundamental frequency light in the resonator cavity exceeds the self-stimulated Raman scattering threshold of the laser gain dielectric crystal, the produced Raman laser is collimated and outputted by the laser collimating mirror. The self-stimulated Raman scattering laser can improve the self-stimulated Raman scattering conversion rate, eliminate the thermal relaxation process from the pump energy level to the laser energy level of electrons of the conventional pump way, improve the quantum efficiency, reduce the heat and increase the self-stimulated Raman scatteringconversion rate.

Provided is a reflection type liquid crystal display device comprising a liquid crystal layer (1), which can be switched between a transmission state and a scattering state, a front substrate (3) and a back substrate (2) for holding the liquid crystal layer (1) inbetween, a pair of electrodes (4 and 8) arranged across the liquid crystal layer (1) for applying a voltage to the liquid crystal layer(1), and first and second orientation films (13 and 12) formed between the liquid crystal layer (1), and the front substrate (3) and the back substrate (2), respectively. The liquid crystal layer (1)includes, for each pixel, a continuous wall (10), a plurality of small chambers (14) separated by the wall (10), and a plurality of liquid crystal regions (11) individually formed in any of the smallchambers (14). The liquid crystal regions (11) have first and second liquid crystal regions (11) having directors (20) in a plane parallel to the liquid crystal layer (1). The directors (20) of the first and second liquid crystal regions (11) are oriented in directions different from one another.

The invention discloses a diffuse reflection film. The diffuse reflection film is composed of randomly-stacked monodisperse microspheres which have no light absorption ability or have a low light absorption rate; the diameter of the microspheres ranges from 300 to 3000 nm. The invention also discloses a manufacturing method of the diffuse reflection film. The method includes the following steps that: a microsphere suspension is prepared, the diameter of microspheres ranging from 300 to 3000 nm; an electrolyte solution making the microspheres aggregated is added into the suspension; the microsphere-aggregated microsphere suspension is deposited on a substrate; and a solvent in the microsphere suspension is completely volatilized, heating is carried out so as to make the microspheres adhered, and therefore, the diffuse reflection film can be obtained. With the diffuse reflection film and the manufacturing method thereof provided by the invention adopted, high-reflectivity diffuse reflection can be realized with a very thin film material.

A backlight module includes a light guide plate, a plurality of light transmission elements and a light source. The light guide plate has at least one light incident surface, and the light transmission elements are disposed near the light incident surface and aligned to from at least one light transmission element row. The light source is disposed near one end of the light transmission element row and capable of emitting a light beam to the light transmission element row. Each of the light transmission elements reflects a part of the light beam to the light guide plate to form multiple independent light reflection paths, and the light transmission elements successively transmits a part of the light beam to form a light transmission path in the light transmission element row.

The invention discloses a microwave signal generating device and method of a photoelectric oscillator based on a liquid-core optical fiber Brillouin scattering effect.The microwave signal generating device includes a Brillouin scattering pump laser, an isolator, a modulator, a liquid-core optical fiber, a signal laser, a first circulator, a third laser, a second ring, a polarization beam splitter, a first optical fiber, a second optical fiber, a first polarization controller, a second polarization controller, a polarization beam combiner, a photoelectric detector, a coupler and a power amplifier.The device and the method can not only produce high-frequency microwave signals and can also obtain tunable microwave signals wider in tuning range.

The invention relates to an epitaxial structure of a deep ultraviolet semiconductor light emitting diode. The epitaxial structure sequentially includes a pattern substrate, a semiconductor buffer layer, an n-type semiconductor material layer, a multi-quantum well layer, a p-type electron blocking layer, and a p-type semiconductor material transport layer along the epitaxial direction; etching on the pattern substrate There are grooves. On each groove, a cavity structure is grown vertically upward. The cavity structure passes through the semiconductor buffer layer, n-type semiconductor material layer, and multiple quantum well layers. The top positions are the following three types: the first , aggregated in the p-type electron blocking layer, the aggregation depth of the cavity in the p-type electron blocking layer is 10-100nm, or, the second type, continue to pass through the p-type electron blocking layer, and aggregate in the p-type semiconductor material transport layer, The aggregation depth of the cavity in the p-type semiconductor material transport layer is 10-500nm, or, the third type, continue to pass through the p-type electron blocking layer and the p-type semiconductor material transport layer, the cavity is not aggregated, and the p-type semiconductor material The surface of the transmission layer appears as circular holes. The invention can improve the internal quantum efficiency of the deep-ultraviolet LED; and the cavity structure is incorporated into the quantum well, which can effectively improve the light scattering characteristics and improve the light extraction efficiency of the deep-ultraviolet light-emitting diode.