Deep ultraviolet semiconductor light emitting diode epitaxial structure

Abstract

The invention relates to a deep ultraviolet semiconductor light emitting diode epitaxial structure. The epitaxial structure sequentially comprises a patterned substrate, a semiconductor buffer layer, an n-type semiconductor material layer, a multi-quantum well layer, a p-type electron blocking layer and a p-type semiconductor material transmission layer in an epitaxial direction, wherein grooves are etched in the patterned substrate, a cavity structure vertically grows upwards on each groove, and the cavity structures penetrate through the semiconductor buffer layer, the n-type semiconductor material layer and the multi-quantum well layer. The top part positions of the cavity structures are divided into the following three types: the first type is that the cavity structures are polymerized on the p-type electron barrier layer, and the polymerization depth of the cavities in the p-type electron barrier layer is 10-100 nm; or the second type is that the cavity structures continuously penetrate through the p-type electron barrier layer and are polymerized on the p-type semiconductor material transmission layer, and the polymerization depth of the cavities in the p-type semiconductor material transmission layer is 10-500 nm; or the third type is that cavity structures continuously penetrate through the p-type electron barrier layer and the p-type semiconductor material transmission layer, cavities are not polymerized, and round holes appear in the surface of the p-type semiconductor material transmission layer. According to the deep ultraviolet semiconductor light emitting diode epitaxial structure, the internal quantum efficiency of the deep ultraviolet LED can be improved; and the cavity structures are incorporated into quantum wells, so that the scattering feature of light can be effectively improved, and the light extraction efficiency of the deep ultraviolet light-emitting diode is improved.

Description

Technical field

[0001] The technical solution of the present invention relates to a semiconductor device, and is specifically a deep ultraviolet semiconductor light emitting diode and a preparation method thereof.Background technique

[0002] Deep ultraviolet light refers to ultraviolet light having a wavelength of less than 300 nm. Due to the short wavelength, there is a great development potential in the fields of sensing, medical, disinfection, light curing, and water purification. Deep Uvorared Light Diode (DUV LED) is a light-emitting diode that can emit deep-ultraviolet light, compared to traditional mercury lamps, which has a series of advantages long, low operating voltage, smart and non-toxic environmental protection, so Wide attention from all walks of life. The AlGan-based DUV LED is a DUV LED with AlGaN as P-N, which is also the most common DUV LED.

[0003] Conventional Algan-based DUV LEDs are grown on sapphire substrate, because sapphire has high lightweight and more mature LED...

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