P-type cap layer enhanced HEMT device and preparation method thereof

An enhanced, cap layer technology, applied in the field of microelectronics, can solve the problems of affecting the lattice quality of the P-type layer, unable to achieve high hole concentration, increasing electron scattering, etc., to improve the hole carrier concentration and mobility, Epitaxial preparation ensures and reduces the effect of electron scattering

Pending Publication Date: 2020-12-25
西安电子科技大学芜湖研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, studies have found that when p-type materials are grown by conventional MOCVD processes, high hole concentrations cannot be achieved, and Mg ions without effective doping will form defects, which will affect the lattice quality of the p-type layer.
Mg ions will also penetrate into the bottom layer in the form of defects, affecting the lattice quality of the barrier layer and even the channel layer, increasing electron scattering and reducing mobility.

Method used

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  • P-type cap layer enhanced HEMT device and preparation method thereof
  • P-type cap layer enhanced HEMT device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Substrate L1 is provided, which is all materials used for epitaxial gallium nitride thin film, including insulating or semi-insulating sapphire, silicon, silicon carbide, gallium nitride and diamond, with a size range of 2 inches.

[0036] (2) The nucleation layer L2 is grown at a temperature of 400° C., which can be any one or a combination of ALN, ALGaN, and GAN, and its total thickness is 10 nm.

[0037] (3) A buffer layer L3 is grown on the nucleation layer, which is made of AlGaN material, the growth temperature is 900°C, and the film thickness is 0.5um.

[0038] (4) Continue to grow the non-intentionally doped GaN high-resistance layer L4 on the buffer layer, the thickness of the film is 1.5um, and the growth temperature is between 1120°C.

[0039] (5) A gallium nitride channel layer L5 is grown on the high-resistance layer, and the film thickness range is 50nm.

[0040] (6) The structural formula of the barrier layer L6 on the channel layer is ALGaN, the thi...

Embodiment 2

[0044] (1) Substrate L1 is provided, which is all materials used for epitaxial gallium nitride thin films, including insulating or semi-insulating sapphire, silicon, silicon carbide, gallium nitride and diamond, with a size range of 5 inches.

[0045] (2) The nucleation layer L2 is grown at a temperature of 500° C., which can be grown by any one or a combination of ALN, ALGaN, and GAN, and its total thickness is 40 nm.

[0046](3) A buffer layer L3 is grown on the nucleation layer, which is made of AlGaN material, the growth temperature is 1000° C., and the film thickness is 1 μm.

[0047] (4) Continue to grow the unintentionally doped gallium nitride high-resistance layer L4 on the buffer layer, the film thickness range is 2um, and the growth temperature is between 1135°C.

[0048] (5) A gallium nitride channel layer L5 is grown on the high resistance layer, and the film thickness range is 100nm.

[0049] (6) The structural formula of the barrier layer L6 on the channel laye...

Embodiment 3

[0053] (1) Substrate L1 is provided, which is all materials used for epitaxial gallium nitride thin film, including insulating or semi-insulating sapphire, silicon, silicon carbide, gallium nitride and diamond, with a size range of 8 inches.

[0054] (2) The nucleation layer L2 is grown at a temperature of 700° C., which can be grown by any one or a combination of ALN, ALGaN, and GAN, and its total thickness is 50 nm.

[0055] (3) A buffer layer L3 is grown on the nucleation layer, which is made of AlGaN material, the growth temperature is 1120°C, and the film thickness is 2um.

[0056] (4) Continue to grow the unintentionally doped GaN high-resistance layer L4 on the buffer layer, the film thickness range is 3um, and the growth temperature is between 1150°C.

[0057] (5) A gallium nitride channel layer L5 is grown on the high resistance layer, and the film thickness range is 200nm.

[0058] (6) The structural formula of the barrier layer L6 on the channel layer is ALGaN, the...

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Abstract

The invention discloses a P-type cap layer enhanced HEMT (High Electron Mobility Transistor) device and a preparation method thereof, and belongs to the technical field of microelectronics. The devicecomprise a substrate, a low-temperature nucleating layer, a buffer layer, a high-resistance layer, a channel layer, a barrier layer, an insertion layer and a P-GaN cap layer which are sequentially stacked from bottom to top. The invention provides a new structure and a new growth method, so that the epitaxial preparation of the enhanced HEMT device is realized, and the stability of the performance of the enhanced HEMT device is ensured.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to the epitaxial preparation of semiconductor devices, that is, a P-type cap-layer enhanced HEMT device and a preparation method thereof. The prepared device is mainly used in high-voltage and high-power applications. Background technique [0002] The third-generation semiconductor material, that is, the Wide Band Gap Semiconductor (WBGS for short) semiconductor material is developed after the first-generation silicon and germanium and the second-generation gallium arsenide and indium phosphide. Among the third-generation semiconductor materials, gallium nitride (GaN) has wide bandgap, direct bandgap, high breakdown electric field, low dielectric constant, high electron saturation drift velocity, strong radiation resistance and good chemical stability Such superior properties as germanium, silicon, and gallium arsenide have become key semiconductor materials for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L21/336H01L29/06
CPCH01L29/778H01L29/7783H01L29/66431H01L29/0603H01L29/0684
Inventor 吴勇葛林男汪琼王东陈兴严伟伟陆俊何滇曾文秀王俊杰穆潘潘操焰崔傲袁珂陈军飞张进成
Owner 西安电子科技大学芜湖研究院
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