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Device and method for preparing boron nitride single crystal

A boron nitride single crystal, boron nitride technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of irregular shape, can not meet the needs of research and industrial development, etc., to achieve cost Low, corrosion avoidance, material availability effect

Active Publication Date: 2014-01-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the size of the h-BN single crystal prepared by these methods is only a few hundred microns at most, and the shape is very irregular, which is far from meeting the needs of relevant research and industrial development.

Method used

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  • Device and method for preparing boron nitride single crystal
  • Device and method for preparing boron nitride single crystal

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Embodiment 1

[0044]In the first embodiment, sapphire is used as a substrate, boron trichloride and ammonia are used as reaction gases, and nitrogen and hydrogen are used as carrier gases to grow a boron nitride single crystal. The boron nitride single crystal preparation method is as follows:

[0045] (1) Provide a sapphire substrate 4, the sapphire substrate 4 is placed on the support part 3 in the reaction part 1;

[0046] (2) Passing alternating current into the heating part 2, and using electromagnetic induction to heat the sapphire substrate 4 to a first temperature, and the first temperature is 900°C;

[0047] (3) Boron trichloride and ammonia are used as reaction gases, and nitrogen and hydrogen are used as carrier gases to pass into the reaction part 1 through the gas inlet 6 to grow a boron nitride single crystal on the sapphire substrate 4 The buffer layer is kept warm at the first temperature for some time. In the present embodiment 1, the boron nitride buffer layer formed has...

Embodiment 2

[0050] In the second embodiment, silicon is used as a substrate, boron trichloride and ammonia are used as reaction gases, and nitrogen and hydrogen are used as carrier gases to grow a boron nitride single crystal. The boron nitride single crystal preparation method is as follows:

[0051] (1) Provide a silicon substrate 4, the silicon substrate 4 is placed on the support part 3 in the reaction part 1;

[0052] (2) Apply alternating current to the heating part 2, and use electromagnetic induction to heat the silicon substrate 4 to a first temperature, and the first temperature is 900°C;

[0053] (3) Boron trichloride and ammonia are used as reaction gases, and nitrogen and hydrogen are used as carrier gases to pass into the reaction part 1 through the gas inlet 6 to grow a boron nitride single crystal on the silicon substrate 4 The buffer layer is kept warm at the first temperature for some time. In Example 2, the thickness of the formed boron nitride buffer layer was 500 nm...

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Abstract

The invention provides a device and a method for preparing boron nitride single crystal. The method comprises the following steps: (1), providing a substrate and placing the substrate on a supporting part inside a reaction part; (2), starting a heating part, heating the substrate to a second temperature; (3), ventilating reaction gases as well as a carrier gas into the reaction part to grow the boron nitride single crystal on the substrate, wherein the reaction gases are boron trichloride and ammonia gas. The device and the method disclosed by the invention have the advantages that firstly, the boron trichloride and the ammonia gas are used as reaction gases to prepare the boron nitride single crystal, and boron nitride polycrystal or corundum is used as the material of the reaction part, so that corrosion of the boron trichloride to the reaction part is avoided; secondly, induction heating is adopted, so that the boron nitride single crystal with high crystal lattice quality can be obtained; thirdly, a vapor phase epitaxy technology is adopted, so that the born nitride single crystal can be grown on a lager substrate, the born nitride single crystal with large dimension can be prepared, and growth speed is quick; fourthly, production device is simple, used materials are easily available, cost is low, and the device and the method can be used for large-scale production.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a device and method for preparing boron nitride single crystal. Background technique [0002] In recent years, with the development of the semiconductor industry, the application value of hexagonal boron nitride (h-BN) single crystal has gradually emerged. The application value of h-BN single crystal is reflected in three aspects: first, it is used to prepare ultraviolet light-emitting devices; second, it is used as a substrate for graphene electronic devices; third, it has important research value in frontier and hot areas of material science . These applications make the preparation of hexagonal boron nitride (h-BN) single crystal materials more and more attention. [0003] At present, h-BN single crystal is mainly prepared by high temperature and high pressure liquid phase reaction, or by using Ni and h-BN as powder in a crucible and heating to 1350-1600°...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/08C30B25/10C30B29/38
CPCC30B25/08C30B25/10C30B25/16C30B25/183C30B29/40
Inventor 黄俊徐科王建峰任国强
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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