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A deep ultraviolet semiconductor light-emitting diode epitaxial structure

A technology of light-emitting diodes and epitaxial structures, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the internal quantum efficiency of deep ultraviolet LEDs, and cannot effectively improve the light extraction efficiency of deep ultraviolet LEDs, so as to improve light extraction efficiency, Improvement of light extraction efficiency and reduction of defect density

Active Publication Date: 2021-09-24
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When these air cones merge, a large number of dislocations will be generated due to different crystal orientations, and these dislocations will directly extend into the quantum well, thereby reducing the internal quantum efficiency (IQE) of the deep ultraviolet LED.
In addition, usually AlGaN-based deep ultraviolet LEDs use pGaN as the hole transport layer and ohmic contact layer, which has a large amount of light absorption. Although PSS introduces scattering centers, most of the light emitted above these scattering centers is scattered first. For pGaN, most of it is absorbed by pGaN, which cannot effectively improve the light extraction efficiency of deep ultraviolet LEDs

Method used

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  • A deep ultraviolet semiconductor light-emitting diode epitaxial structure
  • A deep ultraviolet semiconductor light-emitting diode epitaxial structure
  • A deep ultraviolet semiconductor light-emitting diode epitaxial structure

Examples

Experimental program
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Embodiment 1

[0048] The epitaxial structure of the DUV LED of this embodiment, such as figure 2 As shown, along the epitaxial direction, it includes a pattern substrate 101, a semiconductor buffer layer 102, an n-type semiconductor material layer 103, an n-type semiconductor material layer 103, a multiple quantum well layer 104, a p-type electron blocking layer 105, and a p-type semiconductor material layer. transport layer 106;

[0049] The graphics substrate, such as image 3 As shown, regularly arranged grooves 112 are etched on the graphics substrate 101. The grooves 112 are pits with a diameter between 500nm and 550nm and a depth between 250nm and 300nm. The grooves 112 are on the graphics substrate 101. Graphic arrangement, the present embodiment is a rectangular square matrix arrangement (such as image 3 shown), with a pitch of 20 μm.

[0050] Wherein, a cavity structure is grown on each groove 112 on the surface of the graphics substrate 101, the cavity structure passes throug...

Embodiment 2

[0065] Other steps are the same as in Embodiment 1, except that the size of the substrate pattern etched on the substrate by nanoimprinting or holographic lithography technology is larger, with a diameter between 2-4 μm and a depth between 1-2 μm. This results in a cavity that completely penetrates the entire epitaxial structure, such as Figure 6 As shown, that is, the cavity is in an unclosed state when the growth of the epitaxial structure is completed.

[0066]In addition, the arrangement of the substrate graphics can also be in a circular radial arrangement with an arrangement spacing of 2-200 μm; the substrate graphics can be rectangular strips or other irregular geometric figures with an area of ​​0.25-400 μm 2 In addition to sapphire, the substrate can also be aluminum nitride, gallium nitride, 4H-SiC, R-surface aluminum oxide single crystal, gallium oxide, 6H-SiC, etc.

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Abstract

The invention relates to an epitaxial structure of a deep ultraviolet semiconductor light emitting diode. The epitaxial structure sequentially includes a pattern substrate, a semiconductor buffer layer, an n-type semiconductor material layer, a multi-quantum well layer, a p-type electron blocking layer, and a p-type semiconductor material transport layer along the epitaxial direction; etching on the pattern substrate There are grooves. On each groove, a cavity structure is grown vertically upward. The cavity structure passes through the semiconductor buffer layer, n-type semiconductor material layer, and multiple quantum well layers. The top positions are the following three types: the first , aggregated in the p-type electron blocking layer, the aggregation depth of the cavity in the p-type electron blocking layer is 10-100nm, or, the second type, continue to pass through the p-type electron blocking layer, and aggregate in the p-type semiconductor material transport layer, The aggregation depth of the cavity in the p-type semiconductor material transport layer is 10-500nm, or, the third type, continue to pass through the p-type electron blocking layer and the p-type semiconductor material transport layer, the cavity is not aggregated, and the p-type semiconductor material The surface of the transmission layer appears as circular holes. The invention can improve the internal quantum efficiency of the deep-ultraviolet LED; and the cavity structure is incorporated into the quantum well, which can effectively improve the light scattering characteristics and improve the light extraction efficiency of the deep-ultraviolet light-emitting diode.

Description

technical field [0001] The technical solution of the invention relates to a semiconductor device, specifically a deep ultraviolet semiconductor light emitting diode and a preparation method thereof. Background technique [0002] Deep ultraviolet light refers to ultraviolet light with a wavelength less than 300nm. Due to its short wavelength, it has great development potential in the fields of sensing, medicine, disinfection, light curing, and water purification. Deep ultraviolet light-emitting diode (DUV LED) is a light-emitting diode that can emit deep ultraviolet light. Compared with traditional mercury lamps, it has a series of advantages such as long service life, low operating voltage, smart design and non-toxic environmental protection. received widespread attention from all walks of life. AlGaN-based DUV LED is a kind of DUV LED with AlGaN as the p-n junction, and it is also the most common DUV LED at present. [0003] Conventional AlGaN-based DUV LEDs are grown on...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/24H01L33/06H01L33/14H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/14H01L33/145H01L33/20H01L33/24H01L33/32
Inventor 张勇辉张沐垚张紫辉
Owner HEBEI UNIV OF TECH
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