High-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and preparation method thereof

A technology of sintered silicon carbide and high thermal conductivity, which is applied in the field of inorganic non-metallic materials, can solve the problems of unfavorable industrialization promotion and application, complicated preparation process, and increased production cost, and achieve the advantages of convenient industrial production, simple process, and guaranteed densification Effect

Active Publication Date: 2015-09-23
LAIWU ADVANCED CERAMIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this invention adopts hot isostatic pressing process to prepare silicon carbide ceramic layer and graphene layer by hot isostatic pressing respectively, and then hot isostatic pressing after lamina

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] A pressureless sintered silicon carbide ceramic material with high thermal conductivity, the preparation steps are as follows:

[0049] (1) Weigh 91 parts of D 50 0.45μm silicon carbide, 1 part D 50 3μm graphene, 1 part D 50 Boron carbide of 1.5 μm, 1.5 parts of stearic acid, 1 part of tetramethylammonium hydroxide, and 4.5 parts of polyvinyl alcohol were added to 100 parts of deionized water, and silicon carbide balls were used as grinding media. Ball milling and mixing for 14.5 hours in the liner ball milling tank to prepare SiC slurry; all the above are parts by weight;

[0050] (2) Spray granulate the SiC slurry prepared in step (1), control the moisture content of the granulated powder at 0.8wt%; then use an isostatic press to form cold isostatic pressing under the condition of 160MPa, hold the pressure for 3 minutes, The obtained density is 1.89g / cm 3 body;

[0051] (3) The high-density green body obtained in step (2) was dried at 60°C for 10 hours, then plac...

Embodiment 2

[0054] A pressureless sintered silicon carbide ceramic material with high thermal conductivity, the preparation steps are as follows:

[0055] (1) Weigh 89 parts of D 50 0.45μm silicon carbide, 3 parts D 50 3μm graphene, 1 part D 50 Boron carbide of 1.5 μm, 1.5 parts of stearic acid, 1 part of tetramethylammonium hydroxide, and 4.5 parts of polyvinyl alcohol were added to 100 parts of deionized water, and silicon carbide balls were used as grinding media. Ball milling and mixing for 16.5 hours in the inner liner ball milling tank to prepare SiC slurry; all the above are parts by weight;

[0056] (2) Spray and granulate the SiC slurry prepared in step (1), control the moisture content of the granulated powder at 0.9 wt%; then use an isostatic press to form cold isostatic pressing under the condition of 160MPa, hold the pressure for 3 minutes, Obtain a density of 1.85g / cm 3 body;

[0057] (3) The high-density green body obtained in step (2) was dried at 65°C for 9 hours, th...

Embodiment 3

[0060] A pressureless sintered silicon carbide ceramic material with high thermal conductivity, the preparation steps are as follows:

[0061] (1) Weigh 86 parts of D 50 0.45μm silicon carbide, 6 parts D 50 3μm graphene, 1 part D 50 Boron carbide of 1.5 μm, 1.5 parts of stearic acid, 1 part of tetramethylammonium hydroxide, and 4.5 parts of polyvinyl alcohol were added to 110 parts of deionized water, and silicon carbide ball stone was used as the grinding medium. Ball milling and mixing for 18 hours in an inner liner ball milling tank to prepare SiC slurry; all the above are parts by weight;

[0062] (2) Spray granulate the SiC slurry prepared in step (1), control the moisture content of the granulated powder at 0.8-1.0%; then use an isostatic press to form cold isostatic pressing under the condition of 160MPa, and hold the pressure for 3 minutes , to obtain a density of 1.81g / cm 3 body;

[0063] (3) The high-density green body obtained in step (2) was dried at 55°C for ...

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Abstract

The invention relates to a high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and a preparation method thereof. The high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material comprises 75-95wt.% of silicon carbide, 0.5-10wt.% of graphene, 1-3wt.% of surfactants, 0.5-2.5wt.% of dispersing agents, 2-10wt.% of binders and 0.5-3.5wt.% of boron carbide. The high-thermal-conductivity pressurelessly-sintered silicon carbide ceramic material and the preparation method thereof have the advantages that by a specific ratio among the silicon carbide, the graphene and the boron carbide, a green body is formed by means of pressing and then is subjected to pressureless sintering under a vacuum condition to obtain the SiC (silicon carbide) ceramic material; the graphene is distributed in an SiC matrix material uniformly and is closely combined with SiC, and the problems that decreasing and counteracting of thermal conductivity result from phonon scattering of internal pores of the material and exceed the increasing effect of the introduced graphene on the thermal conductivity are avoided, so that densification and uniformity of the ceramic material are guaranteed, and the high thermal conductivity is achieved.

Description

technical field [0001] The invention relates to a pressureless sintered silicon carbide (SiC) ceramic material with high thermal conductivity and a preparation method thereof, belonging to the field of inorganic non-metallic materials. Background technique [0002] SiC ceramics have the advantages of high hardness, high temperature resistance, oxidation resistance, corrosion resistance, high temperature strength, good chemical stability, good thermal shock resistance, high thermal conductivity, and low thermal expansion coefficient. They are used in industrial kilns, petroleum, metallurgy, It is widely used in chemical industry, machinery, aerospace and many other fields, especially the excellent thermodynamic properties of silicon carbide ceramics make it suitable for heat exchangers, regenerative combustion, electronic device packaging substrates and other occasions that require high thermal performance with broadly application foreground. [0003] However, the currently ...

Claims

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Application Information

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IPC IPC(8): C04B35/565C04B35/622
Inventor 张玉军李其松谭砂砾
Owner LAIWU ADVANCED CERAMIC TECH
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