Topological insulator/graphene compound flexible transparent conductive thin film and preparation method and application thereof

A technology of topological insulator and graphene composite, applied in conductive layers on insulating carriers, cable/conductor manufacturing, circuits, etc., can solve the problems of unstable surface adsorbate, decrease, desorption conductance, etc., and achieve excellent chemical stability and mechanical properties, high electrical conductivity, improved electrical conductivity reduction effect

Active Publication Date: 2015-10-14
PEKING UNIV
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under the conditions of ultraviolet light or heating, these surface adsorbates are unstable and will desorb to reduce the conductivity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Topological insulator/graphene compound flexible transparent conductive thin film and preparation method and application thereof
  • Topological insulator/graphene compound flexible transparent conductive thin film and preparation method and application thereof
  • Topological insulator/graphene compound flexible transparent conductive thin film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Embodiment 1, preparation topological insulator / graphene composite film

[0061] 1) Pretreatment and annealing of copper foil

[0062] The copper foil (produced by Alfa Aesar, with a purity of 99.8% and a thickness of 25 μm) was cleaned sequentially with 5% dilute hydrochloric acid and deionized water, and the copper foil was placed in a casing with a magnetic control device, and then The bushing is placed in a tube furnace, and the temperature of the furnace body is raised to 1020°C under a hydrogen atmosphere with a flow rate of 5 sccm, the system pressure is 10 Pa, and the annealing is performed for 30 minutes to obtain an annealed copper foil;

[0063] 2) Prepare graphene film on copper foil:

[0064] Lower the temperature of the furnace body to 1000°C, keep the flow rate of hydrogen constant, and feed methane gas with a flow rate of 5 sccm, and keep it for 30 minutes for chemical vapor deposition. That is, the growth of the intrinsic single-layer graphene film is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a topological insulator / graphene compound flexible transparent conductive thin film and a preparation method and application thereof. The topological insulator / graphene compound flexible transparent conductive thin film is combined by a nanosheet formed by a topological insulator and a graphene thin film by virtue of Van der Waals' force. The preparation method comprises the step: by taking inertial gas as carrier gas, putting the topological insulator in the upstream of a gas flow direction and putting the graphene thin film in the downstream of the gas flow direction for chemical vapor deposition to obtain the topological insulator / graphene compound flexible transparent conductive thin film. According to the topological insulator / graphene compound flexible transparent conductive thin film disclosed by the invention, a stable conductive channel can be provided by virtue of a special metal surface state of the topological insulator, the crystal boundary of the domain is sewed, and reduction of conductivity caused by electron scattering at the crystal boundary is improved, so that the topological insulator / graphene compound flexible transparent conductive thin film is obtained. The thin film has high transmission of light in a wide wavelength coverage, high conductivity, outstanding chemical stability and mechanical property, and can be used for the field of photoelectrons, nano-electrons and the like.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a topological insulator / graphene composite flexible transparent conductive film and a preparation method and application thereof. Background technique [0002] Topological insulators are a new class of quantum states in which the bulk phase is an insulator with an energy gap and the surface is a metal state without an energy gap. Due to the inherent spin-orbit coupling effect, the metallic surface state of topological insulators has a linear energy dispersion relationship, which is a new generation of Dirac materials after graphene. And the spin and momentum of its surface state electrons satisfy a specific chiral relationship. This surface state is strictly topologically protected from losing metallicity due to external perturbations, and carriers can conduct on the surface without scattering. Based on the unique electronic band structure of topological insulators and its excellent prop...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B1/04H01B13/00
Inventor 彭海琳郭芸帆刘忠范
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap