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Regulation method of high-temperature thermoelectricity Sr3Co4O9 thin-film electrical resistivity

A thin-film resistor and thermoelectric technology, which is applied in the manufacture/processing of thermoelectric devices, ion implantation plating, coating, etc., can solve the problems of high cost and complicated single crystal preparation process, and achieve the effect of continuous control.

Active Publication Date: 2017-01-25
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Currently for material transport anisotropy, such as resistivity anisotropy ρ c / ρ ab And thermoelectric potential anisotropy ΔS=S ab -S c , which is mainly obtained by direct measurement in single crystal materials, but the single crystal preparation process is complicated and expensive; obtaining the transport anisotropy of materials through a simpler method has important research significance for in-depth exploration of the relationship between material structure and performance

Method used

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  • Regulation method of high-temperature thermoelectricity Sr3Co4O9 thin-film electrical resistivity

Examples

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Effect test

Embodiment 1

[0015] Pretreatment of c-axis tilted single crystal substrates: SrTiO with 0° tilt 3 (100) The single crystal substrate is annealed at 1000°C in the air atmosphere for 1 hour, and then treated with acetone, alcohol and deionized water in an ultrasonic cleaner at room temperature for 2 minutes each, and then annealed at 1000°C in the air atmosphere. 1h to obtain a single TiO 2 Termination layer, single crystal substrate with atomically smooth surface.

[0016] Epitaxial thin film growth: using pulsed laser deposition technology with KrF excimer laser with a wavelength of 248nm and a pulse width of 28ns as the light source, with a laser energy of 175mJ, a laser frequency of 3Hz, and a background vacuum of 1×10 -3 Pa, the substrate temperature is 780°C, and the flowing oxygen pressure is 30Pa as the growth process, and the pretreated SrTiO 3 Sr Growth on (001) Single Crystal Substrate 3 co 4 o 9 film, after which at 780°C and 1×10 4 In situ annealing under Pa static oxygen...

Embodiment 2

[0019] Pretreatment of c-axis tilted single crystal substrates: SrTiO with 5° tilt 3 (100) The single crystal substrate is annealed at 1000°C in the air atmosphere for 1 hour, and then treated with acetone, alcohol and deionized water in an ultrasonic cleaner at room temperature for 2 minutes each, and then annealed at 1000°C in the air atmosphere. 1h to obtain a single TiO 2 Termination layer, single crystal substrate with atomically smooth steps.

[0020] Epitaxial thin film growth: using pulsed laser deposition technology with KrF excimer laser with a wavelength of 248nm and a pulse width of 28ns as the light source, with a laser energy of 175mJ, a laser frequency of 3Hz, and a background vacuum of 1×10 -3 Pa, the substrate temperature is 780°C, and the flowing oxygen pressure is 30Pa as the growth process, and the pretreated SrTiO 3 Sr Growth on (001) Single Crystal Substrate 3 co 4 o 9 film, after which at 780°C and 1×10 4 In situ annealing under Pa static oxygen p...

Embodiment 3

[0023] Pretreatment of c-axis tilted single crystal substrates: SrTiO with 10° tilt 3 (100) The single crystal substrate is annealed at 1000°C in the air atmosphere for 1 hour, and then treated with acetone, alcohol and deionized water in an ultrasonic cleaner at room temperature for 2 minutes each, and then annealed at 1000°C in the air atmosphere. 1h to obtain a single TiO 2 Termination layer, single crystal substrate with atomically smooth steps.

[0024] Epitaxial thin film growth: using pulsed laser deposition technology with KrF excimer laser with a wavelength of 248nm and a pulse width of 28ns as the light source, with a laser energy of 175mJ, a laser frequency of 3Hz, and a background vacuum of 1×10 -3 Pa, the substrate temperature is 780°C, and the flowing oxygen pressure is 30Pa as the growth process, and the pretreated SrTiO 3 Sr Growth on (001) Single Crystal Substrate 3 co 4 o 9 film, after which at 780°C and 1×10 4 In situ annealing under Pa static oxygen ...

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Abstract

The invention provides a regulation method of high-temperature thermoelectricity Sr3Co4O9 thin-film electrical resistivity, and belongs to the field of a functional film material. The method includes steps of growing a Sr3Co4O9 thin film extended along a C axis on a single crystal substrate inclined at different angles through pulsed laser deposition, and regulating the electrical resistivity of the extended thin film along the inclination direction through the inclining angle of the c axis of the single crystal substrate. The method can reflect the electrical transport anisotropy of a laminar cobalt-based oxide material.

Description

technical field [0001] The invention provides a high temperature thermoelectric Sr 3 co 4 o 9 The invention relates to a method for regulating and controlling the resistivity of a thin film, belonging to the field of functional thin film materials. Background technique [0002] Split layer structure Sr 3 co 4 o 9 Conducted by CoO 2 layer and insulating Sr 2 CoO 3 The layers are stacked alternately along the c-axis and mismatched along the b-axis, where CoO 2 Low-spin Co in the layer 4+ ( ) provides hole carriers, and strongly localizes thermal and electrical transport to a b In-plane, Sr 2 CoO 3 The layer acts as a phonon scattering center to effectively reduce the thermal conductivity of the material. It is not only an "electronic crystal-phonon glass" material with high electrical conductivity and low thermal conductivity, but also has significant structural and transport anisotropy. , The field of thermoelectric conversion has great application potential....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/28C23C14/08C23C14/58H01L35/34H10N10/01
CPCC23C14/08C23C14/28C23C14/5806H10N10/01
Inventor 宋世金虞澜傅佳倪佳邱兴煌陈琪钟毅
Owner KUNMING UNIV OF SCI & TECH
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