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Manufacturing method of erbium doped high silicon oxygen infrared luminous glass

A technology of infrared light emission and manufacturing method, applied in glass manufacturing equipment, glass molding, manufacturing tools, etc., can solve the problems of unfavorable development of miniaturization of devices, small gain per unit length of optical fiber, low erbium ion concentration, etc.

Inactive Publication Date: 2006-06-14
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are some disadvantages in erbium-doped quartz glass: first, the concentration of erbium ions is not high;
Low concentration will make the gain per unit length of the optical fiber small, which is not conducive to the development of device miniaturization
The second is that the luminescence bandwidth of erbium ions in quartz glass is relatively narrow, which brings difficulties to the expansion of the amplification bandwidth.

Method used

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  • Manufacturing method of erbium doped high silicon oxygen infrared luminous glass
  • Manufacturing method of erbium doped high silicon oxygen infrared luminous glass
  • Manufacturing method of erbium doped high silicon oxygen infrared luminous glass

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Will be decomposed equivalent to 1.0g of Er 2 o 3 2.32g of analytically pure Er(NO 3 ) 3 ·5H 2 O was put into 25 ml of deionized water solution, and after it was completely dissolved, it was formulated as Er 3+ A solution with an ion concentration of 0.21 mol / L, and a size of 5×5×3mm, SiO 2 The porous glass with a content of 97wt% is put into the solution and soaked for more than 10 minutes; after that, the high-silica porous glass doped with erbium ions is put into a high-temperature furnace, and undergoes solid-state sintering at 1150°C in air or oxygen to eliminate Micropores become dense and transparent doped Er 2 o 3 A high silica glass with a concentration of approximately 1.0%. During the sintering process, after rising from room temperature to 400°C at a speed of less than 5°C per minute, it rises to around 950°C at a speed of 10°C per minute, and then rises from this temperature at a speed of below 5°C per minute. After reaching 1150°C and keeping the t...

Embodiment 2

[0025] After decomposing, it is equivalent to 0.1g of Er 2 o 3 0.23g of analytically pure Er(NO 3 ) 3 ·5H 2 O is put into 25 ml of ethanol solution, after it is completely dissolved, it is dubbed Er 3+ A solution with an ion concentration of 0.02 mol / L, and a size of 5×5×3mm, SiO 2 The porous glass with a content of 98wt% is put into the solution and soaked for more than 10 minutes; after that, the high-silica microporous glass is put into a high-temperature furnace, and undergoes solid-phase sintering at a temperature of 1200°C in air or oxygen to eliminate Micropores become dense and transparent doped Er 2 o 3 High silica glass with a concentration of about 0.1%. During the sintering process, after rising from room temperature to 400°C at a speed of less than 5°C per minute, it rises to around 950°C at a speed of 10°C per minute, and then rises from this temperature at a speed of below 5°C per minute. After reaching 1200°C and keeping the temperature at this temperat...

Embodiment 3

[0027] Will be decomposed equivalent to 1.0g of Er 2 o 3 2.32g of analytically pure Er(NO 3 ) 3 ·5H 2 O and 5.0 g of analytically pure Al(NO 3 ) 3 9H 2 O is put into 25 ml of 1 N hydrochloric acid solution, after it is completely dissolved, it is dubbed Er 3+ The ion concentration is 0.21 mol / L, Al 3+ A solution with an ion concentration of 0.53 mol / L, and a size of 5×5×3mm, SiO 2The porous glass with a content of 97wt% is put into the solution and soaked for more than 10 minutes; after that, the high-silica microporous glass doped with these ions is put into a high-temperature furnace, and passes through a solid phase at a temperature of 1120°C in air or oxygen. Sintering eliminates micropores and becomes dense and transparent high-silica glass. During the sintering process, the temperature is raised from room temperature to 400°C at a speed of less than 5°C per minute, and then raised to 950°C at a speed of 10°C per minute. Then, raise from 950°C to 1120°C at a spe...

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Abstract

The present invention relates to a method for making erbium doped high-silica infrared luminescent glass. Said method includes the following steps: (1), selecting high-silica porous glass, SiO2 content in said glass is 95-98 wt%; (2), preparing solution containing erbium ion, the erbium ion concentration range is 0.02-0.42 mole / L; (3), soaking the high-silica porous glass in the solution containing erbium ion to form high-silica porous glass containing erbium ion; and (4), drying and solid-phase sintering in high-temperature furnace at 1050-1200deg.C so as to obtain the invented product. Said glass can produce infrared red light nearby frequency range of 1.53 micrometer, and can produce laser light of 1.54 micrometer in laser resonance cavity.

Description

technical field [0001] The invention relates to luminescent glass, in particular to a method for manufacturing erbium-doped high-silica infrared luminescent glass. Background technique [0002] Erbium-doped ion oxide glass can be used as the working material of active devices such as optical fiber amplifiers and planar optical waveguide amplifiers, and the laser wavelength of 1.54 microns in erbium-doped glass can be absorbed by water, which is suitable for distance measurement that is safe for human eyes Due to these application prospects, people have extensively studied the luminescence characteristics of erbium ions in silicate, phosphoric acid, boric acid, germanate and quartz glass, and the erbium-doped silica fiber amplifier (EDFA) has become the current It is an indispensable key component in optical fiber communication system. However, among the various glass systems mentioned above, only erbium ion-doped silica glass fiber has been practically used at present. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/00C03B19/06C03C4/12
Inventor 陈丹平
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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