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94results about How to "Precise Control of Uniformity" patented technology

Electric self-propelled numerical-control plot drill seeder

The invention relates to an electric self-propelled numerical-control plot drill seeder aiming to solve the technical problems that plot seeders in the prior art are nonuniform in seeding and not precise enough in row length control. The electric self-propelled numerical-control plot drill seeder comprises a walking mechanism, an automatic control device, a seed separation mechanism, a furrowing and seeding mechanism and a lifting mechanism, and the seed separation mechanism, the furrowing and seeding mechanism and the lifting mechanism are correspondingly arranged on the walking mechanism; the seed separation mechanism comprises a seed separation unit and a seed storage unit, the seed separation unit is arranged above the furrowing and seeding mechanism, and the seed storage unit is arranged above the seed separation unit; the walking mechanism is an electric walking mechanism; the seed separation unit comprises a seed separation disc, a seed separation servo motor or a seed separation stepping motor, and the seed separation servo motor or the seed separation stepping motor is arranged below the seed separation disc, and drives the seed separation disc to rotate; the electric self-propelled numerical-control plot drill seeder has the advantages of uniform between-row and in-row seeding, high degree of automation, stepless row length setting (arbitrary row length setting), high row length control accuracy, simple operation, high sowing efficiency and the like.
Owner:李延民

Multi-component complex phase nano boride, corresponding ultra-high temperature oxidation-resistant coating and preparation method thereof

ActiveCN108424174AImprove the problem of cracking and failureReduce ablation rateSelf-healingBoride
The invention discloses a multi-component complex phase nano boride, a corresponding ultra-high temperature oxidation-resistant coating and a preparation method, and belongs to the technical field ofultra-high temperature thermal protective coatings. The multi-component complex phase nano boride and the corresponding ultra-high temperature oxidation-resistant coating are composed of 3-20wt% of TiB2, 10-40wt% of SiC and the balance HfB2. A nano structure inside the nano HfB2-SiC-TiB2 coating can control the stress at the grain boundary so as to obtain a high-strength interface, inhibit dislocation movement in a fracture process, hinder crack growth and effectively improve the fracture toughness of the coating; a third phase of TiB2 is added for modification, and TiO2 with a low melting point generated in a service process of the coating can enhance the self-healing ability of an oxide film; and the coating can resist a temperature of more than 1800 DEG C and is more stable in performance, which can effectively solve the problems of poor fracture toughness and insufficient stability of the existing ultra-high temperature oxidation-resistant coating for an aircraft in a service environment.
Owner:BEIJING MINING & METALLURGICAL TECH GRP CO LTD +1

Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and preparation method thereof

The present invention discloses a Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and a preparation method thereof and belongs to the field of novel thermal barrier coatings and the preparation technologies. According to the invention, firstly, a Pt layer with the thickness of 5-10 microns is prepared on a nickel base monocrystal high temperature alloy matrix through the plating or the electron beam physical vapor deposition method, and then a NiAlHfZr coating with the thickness of 20-60 microns is deposited on the Pt layer through the electron beam physical vapor deposition method. The Pt layer reduces the interfacial holes and effectively improves the adhesion of an oxidation film; binary doping of Hf, Zr enables the NiAl coating surface to be smoother and denser and enables the oxidation film generated during the oxidation process on the coating surface to be straighter, especially with little oxidation increase, and greatly improves the oxidation resistance of the coating. The Pt Ni Al bonding layer is completely oxidation resisting at 1200 DEG C. The service life of the coating is prolonged to certain degree through doping of binary elements namely Hf and Zr and Pt modification.
Owner:BEIHANG UNIV

High-strength hot galvanized binding ribbon and production method thereof

The invention discloses a high-strength hot galvanized binding ribbon which consists of the following components in percentage by weight: 0.25-0.35% of C, 0.80-1.60% of Mn, not more than 0.010% of Si, less than or equal to 0.010% of P, less than or equal to 0.010% of S, 0.030-0.050% of Ti and 0.030-0.060% of Al. The high-strength hot galvanized binding ribbon is produced by the following steps: smelting, performing continuous casting to form ingots, and heating the ingots; roughing; finish-rolling; rolling; performing conventional electrolytic degreasing; performing cold rolling; and preparing the ribbon. The thickness of the high-strength hot galvanized binding ribbon is 0.60mm, the tensile strength is not less than 980MPa, the elongation is not less than 10%, the repeated bending frequency is not less than 10 (R=5mm), a layered brittle failure phenomenon is avoided, the thickness and uniformity of a zinc layer can be exactly controlled on the premise that the hot galvanized binding ribbon is not obviously rusted when placed in an indoor atmospheric environment for 180 days, and the mechanical property can be adjusted in the hot plating process. Subsequent procedures such as passivation and oil coating are eliminated, so that the process is shortened, and energy consumption is reduced.
Owner:武汉钢铁有限公司

Ultraviolet electricity scaling hot-dispelling electric detector

The invention discloses an ultraviolet radiation electric calibration pyroelectric detector, which comprises a chip hanging up and encapsulated in a metallic tube case. The chip consists of a pyroelectric wafer; a metallic upper electrode layer, a polyimide insulation shielding layer, a multi-wall carbon nano-tube film capable of not only absorbing ultraviolet radiation but also being heated through conduction, which are deposited on the upper surface of the pyroelectric wafer in turn; and a signal electrode layer which is deposited on the lower surface of the pyroelectric wafer. The ultraviolet radiation electric calibration pyroelectric detector has the greatest advantage of adopting the multi-wall carbon nano-tube as an ultraviolet conduction and absorption film. Compared with the prior art adopting a black gold conduction and absorption film, the ultraviolet radiation electric calibration pyroelectric detector can absorb the ultraviolet radiation with higher efficiency and better heat conducting property, strengthen the photoelectric equivalence, and reduce calibration errors with stable performance of the multi-wall carbon nano-tube film. The ultraviolet radiation electric calibration pyroelectric detector adopts the insulation shielding layer made of polyimide, thereby bringing about compatibility with the micro-electronic technique, accurate control on the thickness and evenness of the film, and good heat stability.
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI

Manufacturing method for structure of extremely thin silicon on insulator and manufacturing method for semiconductor device

Disclosed are a manufacturing method for a structure of extremely thin silicon on an insulator (ETSOI) and a manufacturing method for a semiconductor device. The manufacturing method for the semiconductor device includes: providing silicon on insulator (SOI); forming a hard-mask layer on a top-silicon layer and carrying out a patterning processing on the hard-mask layer; and measuring real thicknesses of exposed areas of the top-silicon layer; injecting doping ions into the exposed areas of the top-silicon layer with an injection quantity related to corresponding real thicknesses of the injected areas; carrying out an etching processing, and removing part of the exposed areas of the top-silicon layer and forming trenches; forming side walls on flanks of the trenches and forming gate structures on areas defined by the flanks; carrying out a planarization processing so that upper surfaces of the gate structures are flush with an upper surface of the hard-mask layer; removing the hard-mask layer; and injecting ions into the exposed areas of the top-silicon layer and forming elevated source/drain areas. The manufacturing method for the structure of the extremely thin SOI and the manufacturing method for the semiconductor device enable the thicknesses and uniformity of the areas of the top-silicon layer on the extremely thin SOI structure to be controlled precisely so that damages on the top-silicon layer are prevented.
Owner:SEMICON MFG INT (SHANGHAI) CORP

A high-strength hot-dip galvanized strap and its production method

The invention discloses a high-strength hot galvanized binding ribbon which consists of the following components in percentage by weight: 0.25-0.35% of C, 0.80-1.60% of Mn, not more than 0.010% of Si, less than or equal to 0.010% of P, less than or equal to 0.010% of S, 0.030-0.050% of Ti and 0.030-0.060% of Al. The high-strength hot galvanized binding ribbon is produced by the following steps: smelting, performing continuous casting to form ingots, and heating the ingots; roughing; finish-rolling; rolling; performing conventional electrolytic degreasing; performing cold rolling; and preparing the ribbon. The thickness of the high-strength hot galvanized binding ribbon is 0.60mm, the tensile strength is not less than 980MPa, the elongation is not less than 10%, the repeated bending frequency is not less than 10 (R=5mm), a layered brittle failure phenomenon is avoided, the thickness and uniformity of a zinc layer can be exactly controlled on the premise that the hot galvanized binding ribbon is not obviously rusted when placed in an indoor atmospheric environment for 180 days, and the mechanical property can be adjusted in the hot plating process. Subsequent procedures such as passivation and oil coating are eliminated, so that the process is shortened, and energy consumption is reduced.
Owner:武汉钢铁有限公司

Semiconductor device gold beryllium alloy material and preparation method thereof

ActiveCN109536770ALow in berylliumControl thicknessBeryllium MetalHeat treating
The invention discloses a semiconductor device gold beryllium alloy material and a preparation method thereof. The method comprises the following steps that 1) gold metal and beryllium metal are usedas raw materials, a vacuum induction smelting furnace is used, after the gold is completely melted, the beryllium metal is added, and smelting and casting are conducted to obtain a gold beryllium alloy cast ingot, wherein the alloy cast ingot comprises beryllium with the weight percentage equal to nominal 0.5%-2% plus a certain ratio, and the balance gold; 2) heat treatment is conducted on the alloy cast ingot obtained in the step 1 through a heating furnace; 3) thermoplastic processing is conducted on the cast ingot in the thickness direction by means of plastic processing equipment; 4) tempering heat treatment is conducted on a blank in the heating furnace every 1-2 procedures; 5) the step 3) and the step 4) are repeated until the required thickness of a plate is obtained; and 6) a stamping mold is adopted to machine the plate into the required gold beryllium alloy material. The gold beryllium alloy material obtained by the method is uniform in component, stable in alloy, ands regular in shape and can meet the performance requirements of ohmic contact electrodes of a semiconductor device.
Owner:GRIKIN ADVANCED MATERIALS
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