A method of forming a circuit structure

Abstract

A method of forming a circuit structure includes providing a substrate; etching the substrate to form a plurality of nano-structures; and growing a compound semiconductor material onto the nano-structures using epitaxial growth. Portions of the compound semiconductor material grown from neighboring ones of the nano-structures join each other to form a continuous compound semiconductor film. The present invention can accurately control the size of the nano column, the pattern density and the uniformity, thus causing the III-nitride film to have an improved quality formed thereon; causing obviously transverse growth to reduce the dislocation in the III-nitride film; causing the torque force required by the nano column breakage to be samll; and ensuring that the nano column portion is a portion having weak mechanical strength, which can be easily broken or etched.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a Group III nitride film. Background technique [0002] In recent years, since group-III nitride (commonly referred to as III-nitride or III-nitrogen (III-N)) compounds, such as gallium nitride (GaN) and its related Alloys are actively studied for their promising applications in electronic or optoelectronic components. Specific examples of possible optoelectronic elements include blue light emitting diodes and laser diodes, and ultra-violet photo-detectors. The high energy gap and high electron saturation velocity (electron saturation velocity) characteristics of III nitrogen compounds also make them an excellent choice in the application of high temperature and high speed power electronic components. [0003] Since the equilibrium pressure of nitrogen element (nitrogen) is high at a general growth temperature, it is d...

AI Technical Summary

Problems solved by technology

This may have some adverse effects

First, a large number of defects (dislocation) may be generated in the crystalline GaN film

Second, the thickness uniformity of the formed GaN film is low, which causes the wavelength shift (wavelength shift) of the light emitted by the optical element formed on the GaN film

Third, GaN films with large stresses can generate cracks

[0007] However, the above manufacturing process has disadvantages

Since the nanostructures 11 and 12 need to be formed under optimized manufacturing process conditions, it is difficult to control the size, pattern density and uniformity of the nanostructures 11 and 12

This affects the thickness uniformity of the formed GaN film 15

In addition, the nanostructures in this example have an undesirably large width, thus requiring a large mechanical force to separate the GaN film from the sapphire substrate 10

This not only causes more dislocations to be formed in the GaN film 15, but also breaks the generally very thin GaN film 15.

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