The application discloses a preparation method of
diamond / Ti / W / Cu
composite material, which comprises the following steps: sequentially depositing a
titanium layer, a
tungsten layer and a
copper layer on one surface of
a diamond sheet to obtain a preform; placing the
copper layer of the preform on a
copper-
molybdenum plating pad, and then placing the copper-
molybdenum plating pad in an MPCVD device; vacuumizing a cavity of the MPCVD device to a background vacuum of 5*10 ‑ 3
Torr; introducing
hydrogen gas, controlling the
hydrogen gas flow to be 400sccm-500sccm, adjusting the
cavity pressure to be 60
Torr-70
Torr, starting a
microwave system of the MPCVD device, controlling the
microwave power to be 2000W-2750W, exciting the
hydrogen gas to form a hydrogen
plasma, increasing the temperature of the preform to 720-800, keeping the temperature for 15-30min, and then reducing the temperature to
room temperature to obtain the
diamond / Ti / W / Cu
composite material. The application relies on an MPCVD hydrogen
plasma annealing
system to simultaneously achieve the technical effects of
oxidation resistance and
diffusion suppression, and obtains the
diamond / Ti / W / Cu
composite material with stable interface structure and excellent performance.