Growth method of type-n monocrystalline silicon

A growth method and technology of single crystal silicon, which are applied to the growth of single crystal silicon for n-type semiconductors and the growth of single crystal silicon with narrow resistivity fluctuations, which can solve the problem of different segregation coefficients and double doping resistivity deviation from the initial value. , the different degree of volatilization of doping elements, etc.

Inactive Publication Date: 2016-08-24
SHANGHAI ADVANCED SILICON TECH CO LTD
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Problems solved by technology

However, with the growth of the crystal, the segregation coefficients of the two doping elements with opposite resistance characteristics are different, and the enrichment speed in the melt is different. One of the elements must exceed the other, and the resistivity has a great influence on the doping. The content of elements is extremely sensitive, and a small change in the comprehensive concentration of doping e...

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  • Growth method of type-n monocrystalline silicon
  • Growth method of type-n monocrystalline silicon

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Embodiment 1

[0061] 8-inch n-type single crystal silicon rods in direction were grown by CZ method. Add 120kg of polysilicon raw material and phosphorus into the quartz crucible, and the resistivity target value is 60-100Ω, which is the highest resistivity R si-max 100Ω, minimum resistivity R si-min is 60Ω. According to formula (1) from the highest resistivity R si-max The initial concentration of phosphorus is obtained as 5.9×10 13 atom / g, at the same time by the lowest resistivity R si-min It is calculated that the solidification rate is 0.54 at the point where the secondary doping element is added.

[0062] In a specific implementation, under the protection of an inert gas, the adsorbed oxygen in the raw material is removed. Turn on the heater and gradually raise the temperature to above 1420°C to completely melt the raw materials. According to the conventional crystal growth parameters, seeding, shouldering, shoulder turning, and entering the equal-diameter stage are carried out...

Embodiment 2

[0065] 8-inch n-type single crystal silicon rods in direction were grown by CZ method. Add 120kg of polysilicon raw material and phosphorus into the quartz crucible, and the resistivity target value is 70-100Ω, that is, the highest resistivity R si-max 100Ω, minimum resistivity R si-min is 70Ω. According to formula (1) from the highest resistivity R si-max The initial concentration of phosphorus is obtained as 5.9×10 13 atom / g, at the same time by the lowest resistivity R si-min It is calculated that the secondary doping elements need to be added twice, and the solidification rates at the addition points are 0.40 and 0.68, respectively.

[0066] In a specific implementation, under the protection of an inert gas, the adsorbed oxygen in the raw material is removed. Turn on the heater and gradually raise the temperature to above 1420°C to completely melt the raw materials. According to the conventional crystal growth parameters, seeding, shouldering, shoulder turning, and ...

Embodiment 3

[0070] 8-inch n-type single crystal silicon rods in direction were grown by CZ method. Add 120kg of polysilicon raw material and phosphorus into the quartz crucible, and the resistivity target value is 80-100Ω, which is the highest resistivity R si-max 100Ω, minimum resistivity R si-min is 80Ω. According to formula (1) from the highest resistivity R si-max The initial concentration of phosphorus is obtained as 5.9×10 13 atom / g, at the same time by the lowest resistivity R si-min It is calculated that the secondary doping elements need to be added four times, and the curing rates at the addition points are 0.25, 0.47, 0.63 and 0.78, respectively.

[0071] In a specific implementation, under the protection of an inert gas, the adsorbed oxygen in the raw material is removed. Turn on the heater and gradually raise the temperature to above 1420°C to completely melt the raw materials. According to the conventional crystal growth parameters, seeding, shouldering, shoulder turn...

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Abstract

The invention provides a growth method of type-n monocrytalline silicon. The method comprises the steps that P is selected as a main doping element of the type-n monocrystalline silicon and added in the monocrystalline silicon growth process, Ga with the opposite effect is added as an auxiliary doping element of a semiconductor monocrystalline silicon to counteract the concentration increment of P in the monocrystalline silicon, and resistance fluctuations in the monocrystalline silicon growth process are controlled. Meanwhile, when the weight of the monocrystalline silicon meets the specific requirement, the auxiliary doping element Ga is added one or more times, the comprehensive concentration of the co-doping element in the monocrystalline silicon can be further precisely controlled, fluctuations of the electrical resistivity are reduced, the influence caused by volatility of the auxiliary doping element on the concentration of the doping element in melt can also be avoided, and the monocrystalline silicon growth yield can be improved.

Description

technical field [0001] The present invention relates to a method for growing monocrystalline silicon by the Czochralski method, in particular to a method for growing monocrystalline silicon for n-type semiconductors, especially using opposite resistivity characteristics to control resistivity fluctuations, thereby preparing monocrystalline silicon with narrow resistivity fluctuations growth technology. Background technique [0002] In the manufacturing process of semiconductor single crystal silicon, the most commonly used is the Czochralski method (Czochralski, abbreviated as CZ). In the Czochralski method, polycrystalline silicon is filled in a quartz glass crucible (also called a quartz crucible), and then heated and melted to form For silicon melt, the seed crystal is immersed in the silicon melt and then rotated and pulled upwards. Silicon solidifies and crystallizes at the interface between the seed crystal and the molten solution to form a single crystal silicon ingot...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B15/20
CPCC30B29/06C30B15/20
Inventor 张俊宝刘浦锋宋洪伟陈猛
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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