Diluted magnetic ZnO-base semiconductor prepared by sol-gel method

A technology of magnetic semiconductor and gel method, which is used in semiconductor/solid-state device manufacturing, inorganic material magnetism, inductor/transformer/magnet manufacturing, etc. It can solve the problems of difficult to obtain p-n junction homogeneous contact and difficult to obtain p-type materials.
CN1383161AInactive Publication Date: 2002-12-04NANJING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NANJING UNIV
Publication Date
2002-12-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

This invention relates to a method for preparing ZnO base dilution magnetic semiconductors with Sol-Gel method by applying Sol-Gel method combined with doped ferromagnetic ions as Fe. Co or Mn. Ni etc. to prepare ZnO base dilution magnetic semiconductor films. It is first to prepare ZnO Gel solution by dissolving a proportion of analytically pure zinc acetate and metal salt (the atomic concentration ratio of Fe and Zinc is 1-1.5%) in asolute alcohol, mixed evenly to get ZnO colloidal solution finally which is informly coated on the rotating Si chips. The film is kept for a period of time under room temperature-100 deg.C after a few minutes of heat treatment, then to go through heat treatment for 0.5-1.5 hours under nitrogen atmosphere at 500-900 deg.C.
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Description

1. Technical field:

[0001] The invention relates to a growth method of a zinc oxide (ZnO)-based diluted magnetic semiconductor thin film, which mainly adopts a sol-gel method and magnetic ion doping to prepare the ZnO diluted magnetic semiconductor thin film. 2. Technical background

[0002] Diluted Magnetic Semiconductor (DMS) is a new type of functional material that dopes magnetic ions in non-magnetic semiconductors (such as IV-VI, II-VI or III-V) and uses carrier control technology to generate magnetism. . The Curie temperature of DMS materials currently studied is relatively low. From the perspective of practical application, it is urgent to find materials with higher Curie temperature. Theoretical work suggests that wide bandgap semiconductors such as GaN and ZnO may be suitable representative materials capable of realizing carrier-induced ferromagnetism at room temperature or higher.

[0003] ZnO is a very important representative material of II-VI compound semicond...

Claims

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