Method for preparing longitudinal high-pressure deep-slot transistor

Abstract

The invention discloses a method for preparing a longitudinal high-pressure deep-slot transistor. P-type semiconductor regions and N-type semiconductor regions are alternatively arrayed in a drift region of a device. The P-type semiconductors in the drift region are prepared by the steps of: firstly, forming deep slots by using a deep-slot etching process; secondly, filling boron-phosphorosilicate glass into the deep slots; thirdly, removing the boron-phosphorosilicate glass from the surface by etching; and finally, diffusing boron impurities and phosphorus impurities in the boron-phosphorosilicate glass into silicon on the side walls and at the bottoms of the deep slots by using an annealing process, wherein the boron impurity content of the boron-phosphorosilicate glass is far more than the phosphorus impurity content, so that the semiconductor regions on the side walls and at the bottoms of the deep slots are changed into the P-type doped semiconductor regions. The method has high process controllability and low process cost, and the manufactured device has high performance.

Description

Technical field: [0001] The invention relates to a method for preparing a high-voltage power metal oxide semiconductor device made of silicon, more precisely, a method for preparing a vertical high-voltage deep groove metal oxide semiconductor field effect transistor made of silicon. Background technique: [0002] At present, power devices are more and more widely used in daily life, industrial production and other fields, especially power metal oxide semiconductor field effect transistors, which have more advantages than power bipolar devices. The use of power metal oxide semiconductor tubes in power applications has the following advantages: First, the driving circuit of power metal oxide semiconductor tubes is relatively simple. Bipolar transistors may require as much as 20% of the rated collector current to ensure saturation, while MOS transistors require much less drive current and can often be driven directly by CMOS transistors or collectors. Open-circuit transistor-...

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Problems solved by technology

[0004] Aiming at the problems encountered in the preparation method of the structure of the vertical double-diffused metal-oxide-semiconductor field-effect transistor with the PN spacer structure in the drift region made of silicon, the present invention proposes a vertical high-voltage transistor made by groove etching and groove filling processes. A method for preparing a deep-groove semiconductor tube. This method has high process controllability, low process cost, and high performance of the manufactured device.

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