Method for preparing er-doped silicon carbide optical waveguide through ion implantation

A silicon carbide optical and ion implantation technology, applied in the direction of light guides, optics, optical components, etc., can solve the problems of low activation efficiency, secondary defects, and restrictions on erbium-doped silicon carbide optical waveguides, so as to avoid low waveguide gain and improve Effects of light gain and enhancement of fluorescence luminous efficiency

Inactive Publication Date: 2013-12-25
SHANDONG JIANZHU UNIV
View PDF3 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If ordinary thermal annealing is performed on SiC samples doped with impurity ions, only high temperatures around 1400°C can repair some of the lattice defects and activate the impurity ions implanted into the sample, but the activation efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing er-doped silicon carbide optical waveguide through ion implantation
  • Method for preparing er-doped silicon carbide optical waveguide through ion implantation
  • Method for preparing er-doped silicon carbide optical waveguide through ion implantation

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0027] 1. Example one:

[0028] (1) The silicon carbide sample 1 that has been cut and optically polished is cleaned with acetone and ultrasound, and then the cleaned silicon carbide sample 1 is applied.

[0029] (2) Put the cleaned sample in (1) in the target chamber of the accelerator and vacuumize to 1×10 Pa, perform the oxygen ion implantation process. Implant energy 0.5MeV, implant dose 1×10 ions / cm , The whole process is carried out at a temperature of 600°C.

[0030] (3) Place the sample obtained in (2) in an annealing furnace, and perform high-temperature annealing treatment on the sample in an argon atmosphere. The annealing temperature is controlled at 1200°C and the annealing time is 0.5h. Through this process, a buried silicon dioxide layer 2 with a thickness of approximately 600 nm and a near-stoichiometric ratio can be obtained on the silicon carbide sample.

[0031] (4) Place the sample obtained in (3) in the target chamber of the accelerator and evacuate to 1×10 ...

Example Embodiment

[0035] 2. Embodiment two:

[0036] (1) The silicon carbide sample 1 that has been cut and optically polished is cleaned with acetone and ultrasound, and then the cleaned silicon carbide sample 1 is applied.

[0037] (2) Put the cleaned sample in (1) in the target chamber of the accelerator and vacuumize to 1×10 Pa, perform the oxygen ion implantation process. Injection energy 1MeV, injection dose 2.5×10 ions / cm , The whole process is carried out at a temperature of 650°C.

[0038] (3) Place the sample obtained in (2) in an annealing furnace, and perform high-temperature annealing treatment on the sample in an argon atmosphere. The annealing temperature is controlled at 1200°C and the annealing time is 1h. Through this process, a buried silicon dioxide layer 2 with a thickness of approximately 970 nm with a near-stoichiometric ratio can be obtained on the silicon carbide sample.

[0039] (4) Place the sample obtained in (3) in the target chamber of the accelerator and evacuate to...

Example Embodiment

[0042] 3. Embodiment three:

[0043] (1) The silicon carbide sample 1 that has been cut and optically polished is cleaned with acetone and ultrasound, and then the cleaned silicon carbide sample 1 is applied.

[0044] (2) Put the cleaned sample in (1) in the target chamber of the accelerator and vacuumize to 1×10 Pa, perform the oxygen ion implantation process. Injection energy 2.0MeV, injection dose 2.5×10 ions / cm , The whole process is carried out at a temperature of 650°C.

[0045] (3) Place the sample obtained in (2) in an annealing furnace, and perform high-temperature annealing treatment on the sample in an argon atmosphere. The annealing temperature is controlled at 1200°C and the annealing time is 1h. Through this process, a buried silicon dioxide layer 2 with a thickness of approximately 600 nm and a near-stoichiometric ratio can be obtained on the silicon carbide sample.

[0046] (4) Place the sample obtained in (3) in the target chamber of the accelerator and evacuate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing an er-doped silicon carbide optical waveguide through ion implantation. The method sequentially comprises the steps of crystal polishing and cleaning, oxygen ion implantation, annealing, erbium ion implantation and annealing and finally an er-doped silicon carbide waveguide is obtained. The SOI semiconductor technology is adopted in the process that a silicon dioxide lower coating layer of the er-doped silicon carbide optical waveguide is prepared, so that a silicon dioxide buried layer with the stoichiometric ratio is generated, and the refractivity difference value between the silicon dioxide buried layer and an er-doped silicon carbide waveguide core layer is large. In the er-doped silicon carbide waveguide core layer, the concentration of erbium ions accords with Gaussian distribution, the concentration of the erbium ions in the middle of the er-doped silicon carbide waveguide core layer is the highest, the fluorescence radiation efficiency of the erbium irons is effectively improved, and light gain is improved. The depth and the concentration of the implanted erbium ions can be accurately controlled through adjustment of implantation energy and implantation doses and the phenomena that waveguide gain is low due to the ultra-low concentration of the implanted erbium ions and the concentration quenching effect occurs due to the ultra-high concentration of the implanted erbium ions can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing an erbium-doped silicon carbide optical waveguide. Background technique [0002] As a wide bandgap semiconductor, silicon carbide has a wide light transmission range (0.54-2.0 μm), and is suitable for preparing optical waveguides from visible to near-infrared, especially at the wavelength of long-distance optical communication. In addition, silicon carbide also has the characteristics of high mechanical strength, stable chemical properties, and high thermal conductivity, and has great advantages in making optical waveguide sensors in harsh environments. The doping of rare earth element Er (erbium) ions has always been a research hotspot in the field of optoelectronics. The main reason is that the electronic transition on the 4f shell of erbium ions can emit photons with a wavelength of about 1.5 microns. And 1.5 micron is the wavelength...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G02B6/122G02B6/134
Inventor 付刚张秀全季燕菊秦希峰
Owner SHANDONG JIANZHU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap