The invention discloses a flexible GaAs photovoltaic device with a bidirectional light
trapping structure and a preparation method, and belongs to the technical field of solar cells. The device comprises an anti-reflection functional layer, a top
electrode, a photovoltaic epitaxial layer, a back
electrode and a flexible substrate from top to bottom. The anti-reflection functional layer is a columnar array formed by
photoresist doped with high-refractive-index nanoparticles, and is used for
broadband and wide-angle anti-reflection; and the back
electrode is a
metal layer covering the patterned insulating
pyramid array to form a
diffuse reflection back mirror. The micro-nano structures on the front and back surfaces achieve a synergistic effect, bidirectional light
trapping is achieved, and the light
trapping capability is greatly improved. According to the preparation method, low-temperature patterning processes such as 3D
direct writing, nanoimprint, ink-jet printing and the like are adopted in the whole process, the flexible substrate is perfectly compatible, and the problems of damage and high cost caused by a traditional high-temperature
etching process are solved; and meanwhile, high efficiency, high flexibility and low cost are realized, and the method is particularly suitable for the high-end flexible electronic fields of wearable equipment,
aerospace and the like.