Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter

A ridge-type waveguide and optical amplifier technology, applied in the field of polarization-independent semiconductor optical amplifiers, can solve the problems of complex manufacturing process, lower device yield, and increase the difficulty of material growth, etc., and achieve simple and reliable process, low polarization sensitivity, and high coupling Effect of Alignment Tolerance

Inactive Publication Date: 2005-01-12
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

Regarding the fabrication of the tapered waveguide, for the ridge-shaped lateral tapered waveguide, its manufacturing process is relatively simple and direct compared with other tapered waveguide structures, and generally can be completed by standard photolithography, etching and other processes; for For vertical tapered waveguides and hybrid tapered waveguides, the manufac

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  • Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter
  • Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter
  • Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter

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Embodiment Construction

[0014] The present invention will be further described in detail below with reference to the accompanying drawings and an example of a wavelength of 1.55 μm.

[0015] like figure 1 As shown, InP substrate 1; n-type InP buffer layer 2; passive waveguide layer 3 with a wavelength of 1.05 μm; n-type second-order wide ridge waveguide 4; active region 5; . Like a common optical amplifier, electrodes are also provided on the top and bottom of the above device, and the material is Ti / Pt / Au, which is not marked in the drawings. The active region adopts a tensile strain bulk material structure, the material is InGaAsP, the thickness is 0.12μm, and the tensile strain amount is -0.12%; the currently mature separately confinement heterostructure (SCH) is used; the upper and lower waveguide layers are both made of InGaAsP with a wavelength of 1.28μm The matching materials are all 0.1 μm thick; the substrate is an n-type InP material. The integrated device we made adopts a ridge-type lat...

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Abstract

The light amplifier includes InP substrate, n type InP buffer layer, passive waveguide layer, active region, ridge type waveguide and electrodes in top and bottom layers. Characters are that second stage wide ridge waveguide is setup between passive waveguide layer and active region. The said ridge type waveguide is lateral taper structure. Ridge type waveguide and second stage wide ridge waveguide together makes light beam match to optical fiber at far field. Ridge type waveguide is divided into three parts: reduced laterally in two stages. Features are: good performance in far field, very high coupling efficiency to waveguide or fiber and alignment tolerance, wide applicable to optical network, optical integration and photoelectron integration.

Description

technical field [0001] The invention relates to a semiconductor optical amplifier, in particular to a polarization independent semiconductor optical amplifier (SSC-SOA) with a ridge waveguide structure and an integrated mode spot converter. Background technique [0002] Polarization-independent semiconductor optical amplifiers (SOAs), as key devices in optical networks and key functional units in photonic integration (PIC) and optoelectronic integration (OEIC) devices, will play an increasingly important role. A key topic in the development of photonic integrated and optoelectronic integrated devices is the coupling technology between optical devices and waveguides or optical fibers. High coupling efficiency and high coupling alignment tolerance are the basic requirements. Therefore, coupling efficiency with waveguides or fibers is an important issue for most optoelectronic devices, including semiconductor optical amplifiers. In glass fiber, due to its very small refractive...

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Application Information

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IPC IPC(8): G02B6/42H01S5/22H01S5/30
Inventor 马宏陈四海赖建军易新建
Owner HUAZHONG UNIV OF SCI & TECH
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