Ridge waveguide polarized don't-care semiconductor optical enlarger of integrated modular spot converter

Abstract

The light amplifier includes InP substrate, n type InP buffer layer, passive waveguide layer, active region, ridge type waveguide and electrodes in top and bottom layers. Characters are that second stage wide ridge waveguide is setup between passive waveguide layer and active region. The said ridge type waveguide is lateral taper structure. Ridge type waveguide and second stage wide ridge waveguide together makes light beam match to optical fiber at far field. Ridge type waveguide is divided into three parts: reduced laterally in two stages. Features are: good performance in far field, very high coupling efficiency to waveguide or fiber and alignment tolerance, wide applicable to optical network, optical integration and photoelectron integration.

Description

technical field [0001] The invention relates to a semiconductor optical amplifier, in particular to a polarization independent semiconductor optical amplifier (SSC-SOA) with a ridge waveguide structure and an integrated mode spot converter. Background technique [0002] Polarization-independent semiconductor optical amplifiers (SOAs), as key devices in optical networks and key functional units in photonic integration (PIC) and optoelectronic integration (OEIC) devices, will play an increasingly important role. A key topic in the development of photonic integrated and optoelectronic integrated devices is the coupling technology between optical devices and waveguides or optical fibers. High coupling efficiency and high coupling alignment tolerance are the basic requirements. Therefore, coupling efficiency with waveguides or fibers is an important issue for most optoelectronic devices, including semiconductor optical amplifiers. In glass fiber, due to its very small refractive...

AI Technical Summary

Problems solved by technology

Regarding the fabrication of the tapered waveguide, for the ridge-shaped lateral tapered waveguide, its manufacturing process is relatively simple and direct compared with other tapered waveguide structures, and generally can be completed by standard photolithography, etching and other processes; for For vertical tapered waveguides and hybrid tapered waveguides, the manufacturing process is much more complicated than that of lateral tapered waveguides. Many special growth and etching techniques are required to gradually change the thickness of the waveguide layer. For most of these The taper-like waveguide structure often requires multiple epitaxy to complete, which increases the difficulty of material growth and reduces the yield of devices.

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