60results about How to "High optical gain" patented technology

A high gain lens system for implant into the capsular bag after removal of the natural crystalline lens. A preferred embodiment of the invention comprises a combination of a positive or convex lens and a negative or concave lens. These two lenses are spaced from one another and their relative spacing and respective focal lengths determine their combined focal length. When the lens system is inserted into the capsular bag, two opposed haptic flanges on each side, extend toward the inner radial edge of the bag adjacent the ciliary muscles. When the muscles contract, the bag is stretched thereby compressing the haptic flanges together or at least toward one another. This action cause the two lenses to separate further from each other and the increased spacing between the positive and negative lenses shortens the focal length to permit focusing of objects at near distances. On the other hand, when the muscles relax, the bag relaxes also, the haptic flanges separate and the lenses come closer together. The reduced spacing between the positive and negative lenses, increases the focal length to permit focusing of objects at far distances.

A high gain lens system for implant into the capsular bag after removal of the natural crystalline lens. A preferred embodiment of the invention comprises a combination of a positive or convex lens and a negative or concave lens. These two lenses are spaced from one another and their relative spacing and respective focal lengths determine their combined focal length. When the lens system is inserted into the capsular bag, two opposed haptic flanges on each side, extend toward the inner radial edge of the bag adjacent the ciliary muscles. When the muscles contract, the bag is stretched thereby compressing the haptic flanges together or at least toward one another. This action cause the two lenses to separate further from each other and the increased spacing between the positive and negative lenses shortens the focal length to permit focusing of objects at near distances. On the other hand, when the muscles relax, the bag relaxes also, the haptic flanges separate and the lenses come closer together. The reduced spacing between the positive and negative lenses, increases the focal length to permit focusing of objects at far distances.

The invention discloses an electric pump gallium nitride micro laser capable of achieving single-direction emission and a preparation method of the electric pump gallium nitride micro laser. The method comprises the steps of firstly utilizing silicon-based p-type gallium nitride/quantum well/n-type gallium nitride materials, utilizing the electron beam etching technology and the deep-silicon etching technology for preparing an asymmetric gallium nitride suspension thin film micro-cavity supported by a single cantilever beam, conducting vapor deposition of an Au/Ni electrode on the front face of a wafer, conducting vapor deposition of Au/Ti on the surface of the n-type gallium nitride, adopting the ultrasonic bonding technology, bonding a lead on the surface of the electrode, and finally preparing the complete laser. According to the electric pump gallium nitride micro laser and the preparation method of the electric pump gallium nitride micro laser, a proper current is exerted on the prepared laser, and whispering gallery mode ultraviolet laser with single-direction emission is obtained.

Provided is a red light semiconductor laser with high reliability. The emission wavelength of the red light semiconductor laser with high reliability ranges from 630 nm to 690 nm. The red light semiconductor laser with high reliability structurally comprises a substrate, a lower limiting layer, a lower waveguide layer, a quantum well active area, an upper waveguide layer, an upper limiting layer and an ohmic contact layer from bottom to top in sequence. Doping is carried out on the waveguide layer on the basis of the structure of a traditional semiconductor laser, the active area is separated from a PN junction, the highfield of the PN junction will attract the movable defects of the active area, and therefore the reliability of the laser is improved. Meanwhile, the doping atoms of the upper waveguide layer can prevent the high-doping-density atoms of the upper limiting layer from being diffused to the active area, and the power attenuation of the laser during continuous working is reduced. Due to the fact that doping is carried out on the waveguide layer, the series resistance of the laser is reduced, conversion efficiency is improved, the amount of generated joule heat is reduced, and the reliability of the red light laser during long-term working is further improved.

The invention relates to a method for preparing an er-doped silicon carbide optical waveguide through ion implantation. The method sequentially comprises the steps of crystal polishing and cleaning, oxygen ion implantation, annealing, erbium ion implantation and annealing and finally an er-doped silicon carbide waveguide is obtained. The SOI semiconductor technology is adopted in the process that a silicon dioxide lower coating layer of the er-doped silicon carbide optical waveguide is prepared, so that a silicon dioxide buried layer with the stoichiometric ratio is generated, and the refractivity difference value between the silicon dioxide buried layer and an er-doped silicon carbide waveguide core layer is large. In the er-doped silicon carbide waveguide core layer, the concentration of erbium ions accords with Gaussian distribution, the concentration of the erbium ions in the middle of the er-doped silicon carbide waveguide core layer is the highest, the fluorescence radiation efficiency of the erbium irons is effectively improved, and light gain is improved. The depth and the concentration of the implanted erbium ions can be accurately controlled through adjustment of implantation energy and implantation doses and the phenomena that waveguide gain is low due to the ultra-low concentration of the implanted erbium ions and the concentration quenching effect occurs due to the ultra-high concentration of the implanted erbium ions can be avoided.

In order to solve the problems of high optical field loss on P-type DBR (distributed Bragg reflector) side and restricted conversion efficiency of the existing vertical cavity surface emitting semiconductor laser, the invention relates to a high-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution, which belongs to the technical field of semiconductor laser. The high-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution comprises, from bottom to top, an N-side electrode, an N-type substrate, an N-type buffer layer, an N-type segmented DBR, an active region, an oxidation confinement layer, a P-type segmented DBR, a P-type cover layer and a P-side electrode, wherein the refractive index difference of the former 6 to 8 pairs of high- and low-refractive index material of the N-type segmented DBR close to the active region is smaller than that of the latter low-refractive index material pairs; and the refractive index difference of the former 6 to 8 pairs of high- and low-refractive index material of the P-type segmented DBR close to the active region is larger than that of the latter low-refractive index material pairs. The high-efficiency vertical cavity surface emitting semiconductor laser provided by the invention has high photoelectrical conversion efficiency, and wide application prospect.

The embodiment of the invention provides an on-chip pumping-signal light resonance erbium silicate laser and a preparation method thereof. The on-chip pumping-signal light resonance erbium silicate laser comprises a laser active region and a mixed resonant cavity, wherein the mixed resonant cavity is loaded on the upper surface of the laser active region; the laser active region is sequentially provided with a silicon substrate layer and a gain dielectric layer from bottom to top; the gain dielectric layer is of a silicon nitride layer and erbium silicate layer alternating structure, and the upper surface and the lower surface of the gain dielectric layer are both silicon nitride layers; the mixed resonant cavity is of a strip-shaped waveguide structure and is used for controlling a lightfield to be transmitted in the laser active region in a waveguide direction and ensuring that pumping light and signal light are subjected to resonance enhancement in the cavity at the same time so asto improve the absorption efficiency of the pumping and the resonance intensity of the signal light. The erbium silicate compound is used as an optical gain material, so that the optical gain of thematerial in unit distance is effectively improved; the transmission loss of the waveguide is reduced; and the strip-loaded resonant cavity waveguide structure is arranged, so that the etching difficulty of the erbium silicate laser resonant cavity is solved, and meanwhile, the laser output characteristic is improved.

The invention discloses an intelligent safety lock based on laser identification technology. The intelligent safety lock comprises a laser key for transmitting a laser password signal and a lock cylinder for opening the lock, wherein the laser key comprises a laser transmitting module for transmitting a laser signal, a driving module for driving the laser transmitting module to work, a dynamic coding encryption module for encrypting the laser signal and a transmitting lens for collimating the laser signal, and the lock cylinder comprises a receiving lens for receiving the laser signal, a laser detection module for arranging the received laser signal, a signal identification module for identifying the received laser signal, a dynamic coding decryption module for decoding the received laser signal and a mechanical lock cylinder. The intelligent safety lock is simple in structure, capable of improving the safety of the lock, high in security and uneasy to copy.

A lens includes a medium which absorbs laser radiation that may be harmful to the eye or other high gain optics raising its temperature and thereby changing its index of refraction, adjacent to a medium which does not absorb that radiation thereby providing a spatially fluctuating variation in total phase change, which causes interference and thermal blooming that disperses the radiation sufficiently to lower the intensity at the retinal spot (or optics to be protected) below that which would cause damage. Or, reflective surfaces on absorbing material have the same effect. Volumes which absorb or reflect laser radiation of a given band of frequencies are interspersed with volumes which do not absorb or reflect laser radiation of that given band of frequencies; the second volumes may be non-absorbing and non-reflecting, or may absorb laser radiation of a second band of frequencies. The fluctuation in absorption is small compared to total absorption, thereby to provide elements of radiation having different phases but sufficiently similar intensities. Two (or more) layers of absorbers provide protection from four (or more) bands of frequencies. Lead glass is used, for increased change in index as a function of temperature; and absorbing polycarbonate plastic is used for a lens substrate.

The high light gain penetrating and reflecting plate is for LCD comprising one lower plate, one upper plate and one sandwiched liquid crystal layer. The high light gain penetrating and reflecting plate is located in the side of the lower plate with switch element. The high light gain penetrating and reflecting plate includes one light penetrating area, one reflecting area and at least one micro lens, and the micro lens focuses light to the light penetrating area for high light gain.

The invention discloses a quantum dot micro laser and a preparation method thereof. The quantum dot micro laser adopts a suspended silicon disk structure, and the suspended silicon disk structure comprises a silicon substrate layer, a first silicon dioxide layer, a silicon dioxide pillar layer and a silicon dioxide disk layer which are sequentially arranged from bottom to top, wherein the upper surface of the silicon dioxide disk layer is coated with a quantum dot layer in a suspended manner, and the quantum dot layer is covered with a second silicon dioxide layer. According to the preparation method, a micro-cavity of the suspended silicon disk structure is formed by adopting a photoetching process and an RIE etching process, so that the micro-cavity is annealed at a high temperature, then coated with quantum dots of different sizes in a suspended manner, and evaporated with silicon dioxide. The quantum dot micro laser can obtain white laser, has extremely high optical gain and extremely low loss, is beneficial to integration with optoelectronic devices, and can obtain high light conversion efficiency and low threshold.

The invention provides a low-power AlGaInP red light semiconductor laser with a superlattice electron barrier layer and a preparation method of the low-power AlGaInP red light semiconductor laser. The laser sequentially comprises a substrate, a buffer layer, a lower transition layer, an Al < 0.5 > In < 0.5 > P lower limiting layer, a lower waveguide layer, a first quantum well, a barrier layer, a second quantum well, an upper waveguide layer, a superlattice structure-first upper limiting layer, a corrosion stop layer, an Al < 0.5 > In < 0.5 > P second upper limiting layer, an upper transition layer and a cap layer from bottom to top. The laser can effectively inhibit electron overflow, relieve stress of an active region and improve the growth quality of a limiting layer material; meanwhile, a high light limiting factor is achieved, the light gain is improved, and the purposes of reducing the threshold current and improving the slope efficiency are achieved, so that the low-power AlGaInP red light laser has low working current, and heat generation is reduced.