Nitride mode locking echo wall microlaser and preparation method thereof

A technology of micro-laser and nitride, which is applied in the field of laser to achieve the effect of high optical gain

Active Publication Date: 2017-05-31
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, a circular suspended microdisk or a hexagonal gallium nitride single crystal WGM laser is not good enough as an optical communication device or an integrated optical device, because it outputs a multi-mode laser, and some industrial applications require single mode laser

Method used

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  • Nitride mode locking echo wall microlaser and preparation method thereof
  • Nitride mode locking echo wall microlaser and preparation method thereof
  • Nitride mode locking echo wall microlaser and preparation method thereof

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Embodiment Construction

[0022] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0023] Taking the preparation of a nitride mode-locked whispering gallery micro-laser with an outer ring diameter of 10 microns and an inner ring diameter of 6 microns as an example, the preparation process is as follows:

[0024] The first step: After the purchased commercial gallium nitride wafer on silicon substrate is ultrasonically cleaned by acetone, absolute ethanol and deionized water in sequence, it is blown dry with nitrogen, and the surface of the wafer is sprayed at a speed of 4000 rpm by using a homogenizer. Spin-coating photoresist AZ5214, the spin-coating time is 60 seconds (the thickness of the photoresist is 1.5 microns); Technology, define a notched annular film microcavity pattern structure on the spin-coated photoresist layer, and the photolithography machine model is MA6.

[0025] Step 2: Use an electron beam eva...

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Abstract

The invention discloses a nitride mode locking echo wall microlaser and a preparation method thereof. According to a nitride material on a silicon substrate, an overhead ring-shaped thin film microcavity with a gap is prepared through utilization of a photoetching technology and a deep silicon etching technology; gold nanorods, as semiconductor saturable absorbers, are decorated at the gap of the microcavity; and mode locking echo wall laser for nitride is realized under a suitable optical pumping condition.

Description

technical field [0001] The invention belongs to the field of laser technology, and relates to a nitride mode-locked whispering gallery micro-laser and a preparation method thereof. Background technique [0002] The laser can be divided into three types according to the cavity structure: the first type is the random laser formed by the random resonance of the light at the nanoparticle interface; the second type is the light in the one-dimensional micro-nano structure using the two end faces of the micro-nano wire as a cavity mirror Form the F-P laser produced by resonance. The former has a large scattering loss and has no fixed mode; the latter has a large end face loss, and it is not easy to obtain high-quality (Q) and low-threshold laser light. In view of this, the whispering gallery mode (WGM) laser formed by using the microcavities such as larger microrods or microdisks by their total internal reflection provides a way for people to obtain high-quality lasers. [0003] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/06H01S5/065H01S5/10
CPCH01S5/0601H01S5/0657H01S5/1042
Inventor 朱刚毅王永进
Owner NANJING UNIV OF POSTS & TELECOMM
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