21 results about "Semiconductor saturable absorber" patented technology

The application discloses a high-repetition-frequency laser resonant cavity with a piezoelectric driving function and a pulse locking device. In the resonant cavity, a stacked piezoelectric actuator is subjected to a first adhesion process with a first gasket and a second gasket at both ends, a first organic glass and a second organic glass are subjected to a second adhesion process with the other sides of the first gasket and the second gasket, and a combination based on the stacked piezoelectric actuator is formed; a dielectric film is arranged on the end face of a third plug; a gain optical fiber is inserted and passes through a first plug, the combination based on the stacked piezoelectric actuator and a second plug connected in sequence; the end face of the first plug is butted against a semiconductor saturable absorber mirror, and the end face of the second plug is butted against the dielectric film. The application overcomes the problem of repetition frequency drift in a centimeter-level resonant cavity.

This utility model relates to the field of semiconductor saturable absorber protection technology, specifically to a solid-state laser semiconductor saturable absorber packaging device, including a base, a SESAM body, a lens barrel, and a dustproof lens; one end of the lens barrel is sleeved on the outside of the dustproof lens, and the other end of the lens barrel is connected to the base; the SESAM body is disposed inside the lens barrel, and the SESAM body is connected to the upper end face of the base; by adding a lens barrel and a dustproof lens, the SESAM body is encapsulated and protected, isolated from the external environment, avoiding frictional contact between the SESAM body and external dust particles, preventing external environmental pollution, ensuring the service life of the SESAM body, and meeting practical application requirements.

The invention discloses a wavelength-tunable mode-locked fiber laser, which belongs to the technical field of lasers, and is characterized in that an angle-adjustable filter is introduced into a fiber resonant cavity taking a semiconductor saturable absorber mirror as a mode-locked device, and a fiber collimator is utilized to realize coupling of a space section and a fiber section. Compared with a traditional scheme, the whole structure is simple, the tuning range is wide, and the cost is low; while stable self-starting mode-locked pulse output is realized, tuning of the wavelength of an output light beam can be realized. The difficulty in the aspects of manufacturing process and actual operation is greatly reduced, and the system integration level and the flexible expansibility are high.

The utility model belongs to the technical field of semiconductors, and relates to a tunable semiconductor saturable absorption mirror based on the quantum stark effect. The semiconductor saturable absorption mirror comprises a back electrode layer; the substrate insulating layer is arranged on the back electrode layer; the substrate layer is arranged on the base insulating layer; the spectrum tuning unit array is arranged on the substrate layer; wherein the spectrum tuning unit array comprises a plurality of spectrum tuning units which are arranged at intervals, and each spectrum tuning unit comprises a Bragg reflection layer, a quantum well absorption layer, a transparent insulation layer and a transparent electrode layer which are sequentially arranged from bottom to top. According to the utility model, the wavelength-tunable semiconductor saturable absorber mirror can be realized through the quantum stark effect, the application scene of the semiconductor saturable absorber mirror is enriched, and the performance and reliability of the semiconductor saturable absorber mirror in the ultrafast laser technology are improved.

The invention discloses a wavelength and pulse width dual-adjustment optical fiber seed laser for nonlinear microscopic imaging, which comprises a full polarization-maintaining linear cavity, the full polarization-maintaining linear cavity further comprises a reflection type semiconductor saturable absorber mirror (1), an optical fiber coupler (2), a wavelength division multiplexer (3), a 980 nm pumping laser diode (4), a polarization-maintaining gain optical fiber (5), a variable-focus collimator (6), a transmission diffraction grating (7) and an electric control galvanometer (8). All the devices form the full polarization-maintaining linear cavity between the reflection type semiconductor saturable absorber mirror (1) and the electric control galvanometer (8). The output wavelength of the seed light is tuned within the range of 1010-1090 nm by controlling the angle of the electric control galvanometer (8), the spectral width is tuned within the range of 0.1-5 nm by controlling the variable-focus collimator (6), and then the pulse time domain width is tunable within 2-50 ps. According to the invention, an ideal excitation light source can be provided in a nonlinear imaging system.

A system (12) for generating supercontinuum pulsed emission having a substantially flat spectrum, the system comprising: a fiber mode-locked oscillator (1) comprising a laser cavity (2); an amplifier (10); a non-linear optical fiber (11); the laser cavity comprises a Fiber Bragg Grating element (5) and a Semiconductor Saturable Absorber Mirror (8) configured to act as first and second mirrors respectively, the Fiber Bragg Grating element (5) having: a bandwidth between 3 nm and 15 nm, a reflectivity between 10 – 50%, and a dispersion value such that the total dispersion of the laser cavity is in the anomalous dispersion regime.

The present disclosure can generate laser light having an ultrashort pulse and high peak power, be miniaturized, and improve light-pulse light conversion efficiency. A laser element includes: a laminated semiconductor layer that includes a first reflection layer for a first wavelength and an active layer that performs surface light emission at the first wavelength; a laser medium that is disposed on a rear side of an optical axis of the laminated semiconductor layer, and includes a second reflection layer for a second wavelength on a first surface facing the laminated semiconductor layer and a third reflection layer for the first wavelength on a second surface on an opposite side to the first surface; a fourth reflection layer for the second wavelength that is disposed further toward the rear side of the optical axis than the second surface; a first resonator that resonates light of the first wavelength between the first reflection layer and the third reflection layer; a second resonator that resonates light of the second wavelength between the second reflection layer and the fourth reflection layer; and a semiconductor saturable absorber that is disposed between the third reflection layer and the fourth reflection layer and generates the light of the second wavelength by mode-locking, and the optical axis of the laminated semiconductor layer and an optical axis of the laser medium are uniaxially arranged.

The application provides a full solid-state mode-locked laser double optical comb generating device, and relates to the technical field of optical frequency, and comprises a lens group (1), a dichroic mirror (2), a gain crystal (3), a first birefringent crystal (4), a second birefringent crystal (5) and a semiconductor saturable absorber mirror (6), wherein the pump source generates pump light which passes through the lens group (1) to converge a light spot, and passes through the dichroic mirror (2) and is connected with the gain crystal (3), the front and back sides of the gain crystal (3) are connected with the first birefringent crystal (4) and the second birefringent crystal (5) through optical connection respectively, and the second birefringent crystal (5) is connected with the semiconductor saturable absorber mirror (6); the pump light is divided into two polarized lights which are orthogonal to each other by the birefringent crystal, and the gain medium is directly pumped, so that the full solid-state mode-locked laser double optical comb with compact structure, large range of repetition frequency difference tuning and high mutual coherence is realized.

The utility model relates to a linear cavity space-time mode locking all-fiber laser, which comprises a first semiconductor saturable absorber mirror, a first optical fiber section, a gain optical fiber, a second optical fiber section and a second semiconductor saturable absorber mirror which are sequentially connected from left to right, the first optical fiber section comprises a first optical coupler and a first polarization controller which are sequentially connected from left to right; the second optical fiber section comprises a beam combiner and a second polarization controller which are sequentially connected from left to right; the core diameter of the optical fiber in the first optical fiber section is larger than that of the gain optical fiber; the gain optical fiber is welded with the first optical fiber section; the core diameter of the optical fiber in the second optical fiber section is the same as that of the gain optical fiber; the absorptivity, the modulation depth and the relaxation time of the first semiconductor saturable absorber mirror are the same as those of the second semiconductor saturable absorber mirror; the technical problems that a traditional space-time mode-locked fiber laser is poor in pulse adjustability and unstable in space-time mode locking are solved.

A mid-infrared semiconductor saturable absorber mirror based on InAs / GaSb superlattice comprises a GaSb substrate with an anti-reflection film coated on the lower surface of the GaSb substrate; InAs / GaSb superlattice which has a specific structure and thickness and is arranged on the GaSb substrate; and Bragg reflection film which is arranged on the InAs / GaSb superlattice, wherein Bragg reflection film is composed of multiple pairs of ZnS and YbF3 film layers with a thickness of ¼ wavelength, and the YbF3 film layer is connected with the InAs / GaSb superlattice. The device not only has a mid-infrared working range with a broadband operation bandwidth, but also has the advantages of designable parameters, outstanding robustness, high damage threshold and the like, and sets a foundation for the development of mid-infrared ultrafast mode-locked lasers.

This invention discloses a 1030 nm soliton-type pulsed F-P cavity femtosecond fiber oscillator, comprising: a mode-locked oscillator cavity, a pump source, a moving mechanism, and a seed source control module; the mode-locked oscillator cavity includes a chirped fiber Bragg grating, a ytterbium-doped fiber, a wavelength division multiplexing (WDM) synthesizer, a beam splitter, and a semiconductor saturable absorber (SESAM); the pump source is connected to the pump port of the WDM synthesizer, the signal port of the WDM synthesizer is connected to the ytterbium-doped fiber and the first end of the beam splitter respectively, and the ytterbium-doped fiber is connected to the chirped fiber Bragg grating; the second end of the beam splitter is connected to the semiconductor saturable absorber (SESAM); by changing the optical path layout of each device in the oscillator, the pump light coupling direction is reversed to avoid interference of the pump light to the SESAM; the mode-locked feedback signal is analyzed in real time by an FPGA, and the pump current adjustment and SESAM switching action are dynamically coordinated to ensure the power stability of the pump source and the synergistic optimization of the SESAM operating point, so that the seed source is in the optimal mode-locked state during long-term operation.

The application discloses a GHz high-repetition 9-shaped cavity mode-locked fiber laser and a starting method thereof, and particularly relates to the technical field of ultrafast laser, a nonlinear amplification ring mirror, and an auxiliary starting light path arranged outside the nonlinear amplification ring mirror and used in a mode-locked starting stage; the auxiliary starting light path comprises a second reflector, a focusing lens and a semiconductor saturable absorber mirror. The GHz high-repetition 9-shaped cavity mode-locked fiber laser and the starting method thereof have the advantages that by introducing an external and separable auxiliary starting light path, seed light with high peak power is formed in the starting stage, the problem that a nonlinear phase shift difference of an extremely short cavity length is insufficient to cause mode-locked difficulty is effectively solved, stable mode locking of GHz-level repetition frequency pulse output is realized, in a steady-state operation stage, the laser completely relies on the nonlinear amplification ring mirror with low noise and high stability to realize mode locking, and high-stability, low-noise and repetition frequency ≥1GHz pulse output is obtained.

The application discloses a high-repetition-frequency fiber laser based on an active multi-core optical fiber, which comprises a pump source, a wavelength division multiplexer, an optical circulator, an optical combiner, an optical isolator, a dichroic mirror and an ultra-short resonant cavity based on the active multi-core optical fiber, wherein the ultra-short resonant cavity based on the active multi-core optical fiber comprises a semiconductor saturable absorber mirror, a first coreless optical fiber, a second coreless optical fiber, an active multi-core optical fiber, a ferrule and a dielectric film. The application adopts the active multi-core optical fiber as a gain medium, and provides tens of times of the gain of a common active optical fiber under the same cavity length, so that a high-energy pulse output of the order of 10 nJ can be obtained under a GHz repetition frequency; the application has a stable supermode selection effect, has a simple structure, and has an output mode field far field distribution which is approximately a Gaussian distribution.

The invention discloses an all-solid-state common-cavity double-optical-comb mode-locked laser without cross coupling. The all-solid-state common-cavity double-optical-comb mode-locked laser comprises a pumping source, a beam expanding and collimating system, a birefringent crystal, a dichroscope, a gain crystal, a first output coupling mirror, a second output coupling mirror, a first semiconductor saturable absorption mirror and a second semiconductor saturable absorption mirror. The birefringent crystal is added behind the pump light, the pump light can be directly divided into polarized light in two directions perpendicular to each other, the pump light can be pumped in the two beams of polarized light in the cavity so as to eliminate gain competition between the two beams, operation is easy, and the structure is compact. A confocal cavity type design is adopted, and the gain crystal is placed at the waist position of a laser beam in the cavity, so that pump light at the position can be optimally matched with a laser mode in the cavity, and the power of output laser and the light-to-light conversion efficiency are greatly improved.

The application discloses a compact high-repetition-frequency passively mode-locked resonant cavity structure and a fiber laser. The resonant cavity comprises a first ferrule, a semiconductor saturable absorber mirror, a first sleeve, a graded-index lens, a second sleeve, a gain fiber, a second ferrule and a dielectric film. The semiconductor saturable absorber mirror is arranged on the end face of the first ferrule, the first ferrule is connected to one end of the graded-index lens through the first sleeve, the other end of the graded-index lens is connected to the second ferrule through the second sleeve, the dielectric film is arranged on the other end face of the second ferrule, and the gain fiber is located in the second ferrule. By arranging the graded-index lens between the gain fiber and the semiconductor saturable absorber mirror, direct contact between the semiconductor saturable absorber mirror and the end face of the fiber is avoided, good heat dissipation of the resonant cavity can be realized while high-repetition-frequency mode-locked pulse output is obtained, and damage of the fiber laser caused by long-time mode-locked operation is avoided.

The invention discloses an ultra-stable repetition frequency all-fiber nonlinear spectrometer fast tuning ultra-short pulse seed source which comprises an all-polarization-maintaining linear cavity. The all-polarization-maintaining linear cavity further comprises a pump laser diode (1), a wavelength division multiplexer (2), a polarization-maintaining gain fiber (3), a polarization-maintaining fiber Fabry-Perot electrically tuned filter (4), a reflective semiconductor saturable absorber mirror (5) and a polarization-maintaining fiber linear chirp grating (6) which form the all-polarization-maintaining linear cavity. The wavelength-independent linear laser resonant cavity length is realized through the polarization-maintaining optical fiber linear chirp grating, and rapid electric tuning is realized through the polarization-maintaining optical fiber Fabry-Perot electric tuning filter. The problem that the pulse repetition frequency output by the ultrashort pulse seed source cannot be stably kept in the fast wide wavelength tuning range is solved.

The application provides a high-frequency high-energy pulse single-frequency laser, a seed source unit, a semiconductor optical amplification unit arranged on an output light path and a passive modulation device unit arranged on a modulation light path, and the passive modulation device unit comprises a semiconductor saturable absorber mirror. The application adopts a single-frequency semiconductor seed source and MOPA amplification, and then utilizes a saturable absorber to realize a hybrid high-energy pulse single-frequency laser of passive self-mode locking, and is particularly applicable to quantum navigation and high-spectral resolution radar.

This invention discloses an intelligent parameter detection device and method for femtosecond lasers. It utilizes the detection light output from the optical path splitter for real-time repetition rate detection, intelligently adjusting the laser's pump power and the temperature of the semiconductor saturable absorber (SAM) to ensure stable SAM operation in saturation. It automatically detects the laser's start-up current and operating current range, sets the optimal start-up and operating current parameters through an algorithm, and saves the parameters in the internal memory, completing the electrical control parameter tuning process for the laser. The entire parameter tuning process does not require additional external instruments, greatly simplifying the operation process, improving work efficiency, reducing production costs, and protecting human safety.

The invention discloses a laser with a microfluidic heat dissipation cooperative mode locking mechanism, and relates to the technical field of laser. The laser comprises a mode-locked laser resonant cavity, an optical fiber beam splitter connected with the mode-locked laser resonant cavity, an optical fiber Bragg grating sensor, an online spectrum analyzer, a cooperative control processor, a precise microfluid pump and an intracavity electro-optical modulator, the mode-locked laser resonant cavity comprises a gain optical fiber, a semiconductor saturable absorber and an intracavity electro-optical modulator, the gain optical fiber is thermally coupled with the micro-fluidic heat dissipation channel, and the micro-fluidic heat dissipation channel is communicated with a fluid loop of the precise micro-fluid pump. According to the method, the cooperative control model is constructed, the heat dissipation state and the mode locking quality are correlated, and the thermal state prediction model is utilized to carry out feedforward type active adjustment, so that the inherent limitation of traditional separated hysteresis control is overcome, and precise closed-loop control of the mode locking state of the laser is realized; and the stability, the reliability and the environmental adaptability of the laser under complex working conditions are remarkably improved.

The present invention relates to an optically pumped microchip laser comprising: a pump lens; a gain element, wherein the gain element comprises a first end facet and a second end facet, wherein the gain element comprises a gain section, and wherein the gain section during operation of the microchip laser generates electromagnetic laser radiation; an output coupling reflective structure on the first end facet, wherein the output coupling reflective structure has a first reflectivity for the laser radiation; and a semiconductor saturable absorber mirror at the second end facet, wherein the semiconductor saturable absorber mirror comprises a saturable absorber section and a mirror section, and wherein the mirror section has a second reflectivity for the laser radiation, wherein the second reflectivity is larger than the first reflectivity; wherein the pump lens is arranged and positioned such that during operation of the microchip laser electromagnetic pump radiation is focused by the pump lens through the output coupling reflective structure into the gain element. According to the present invention the pump lens is a cylindrical Gradient Index lens comprising a cylinder axis, a first end surface and a second end surface, wherein the Gradient Index lens is arranged and positioned such that during operation of the microchip laser the pump radiation exits the Gradient Index lens through the second end surface, wherein the second end surface forms an angle with the cylinder axis different from 90 degrees, and wherein the gain element and the Gradient Index lens are positioned relative to each other such that the laser radiation exiting the gain element through the output coupling reflective structure is reflected at the second end surface such that the laser radiation bypasses the gain element.

This invention provides a semiconductor saturable absorber packaging structure, relating to the field of laser technology. The semiconductor saturable absorber packaging structure includes a shell, a base, a semiconductor saturable absorber, a fixing member, and an optical fiber; the base is rotatably connected to one end of the shell; the semiconductor saturable absorber is located inside the shell and disposed on the base, with the rotation axis of the semiconductor saturable absorber coinciding with the rotation axis of the base; the fixing member is movably disposed at the other end of the shell along a direction close to or away from the rotation axis of the base, and the fixing member has a through hole; the optical fiber is disposed within the through hole, and the axis of the optical fiber located inside the shell is parallel to and offset from the rotation axis of the semiconductor saturable absorber. The above-described semiconductor saturable absorber packaging structure can greatly maximize the utilization rate of the semiconductor saturable absorber, thereby increasing its service life several times over.