8results about How to "Increase modulation depth" patented technology

The invention relates to a signal emission control method and device based on optical communication and a signal emission laser. The method comprises the following steps: acquiring output light intensity data of the vertical cavity surface emitting laser in a preset temperature range and a bias current range, and determining a bistable working characteristic curve; acquiring a vibration resonance gain signal; gaussian distribution transformation and target phase sampling are performed on the vibration resonance gain signal, and a signal nonlinear compensation model is established; applying a driving current pulse synchronous with communication data, symmetrically sampling the output signal subjected to transient response control at a rising edge and a falling edge, and constructing a signal quality evaluation vector; and inputting a support vector regression model, establishing a mapping relation between the light intensity characteristic parameter and the driving control parameter, and generating a real-time control signal of the laser. According to the invention, the self-adaptive accurate control of the vertical cavity surface emitting laser is realized, and the stable operation of the signal emitting laser under the temperature and bias current fluctuation condition is ensured.

The invention discloses a terahertz modulator based on an aluminum and germanium-antimony-tellurium composite dumbbell hole array. The terahertz modulator comprises a substrate and the aluminum and germanium-antimony-tellurium composite dumbbell hole array formed on the surface of the substrate. The aluminum and germanium-antimony-tellurium composite dumbbell hole array is characterized in that a plurality of periodically arranged dumbbell holes are etched in an aluminum thin film, and a layer of germanium-antimony-tellurium thin film covers the aluminum dumbbell hole array; a structural unit of the aluminum dumbbell hole array is composed of two round holes with the same radius and a rectangular hole, the rectangular hole is connected with the two round holes, and the depth of the round holes, the depth of the rectangular hole and the thickness of the aluminum film are the same. The terahertz modulator can dynamically adjust the transmissivity of terahertz waves through germanium-antimony-tellurium phase change. According to the aluminum and germanium-antimony-tellurium composite dumbbell hole array disclosed by the invention, a modulator can be realized in a terahertz frequency band, and dynamic adjustment on the terahertz wave transmissivity is realized by utilizing the phase change characteristic of germanium-antimony-tellurium.

The invention belongs to the technical field of integrated photoelectronics, and discloses an MOS (Metal Oxide Semiconductor) type silicon-on-chip electro-optical modulator based on colloid nanocrystals and a preparation method thereof. The silicon waveguide layer is arranged above the waveguide cladding layer; optical couplers used for inputting and outputting optical signals are arranged at the two ends of the silicon waveguide layer; the dielectric layer is arranged above the silicon waveguide layer in a covering manner; a colloidal nanocrystalline layer disposed over the dielectric layer; the upper electrode layer is arranged above the colloid nanocrystalline layer; the lower electrode layer is communicated with the silicon waveguide layer; and the dielectric layer is used for changing the polarization state according to an external voltage and controlling the inductive charge concentration in the colloid nanocrystalline layer and the silicon waveguide layer through the polarization state. The room-temperature liquid phase processing procedure of the colloidal nanocrystal is simple, and is completely compatible with a silicon-based CMOS (Complementary Metal Oxide Semiconductor) process, so that low-cost and large-scale integration can be carried out; the colloidal nanocrystal has a plasma dispersion effect stronger than that of a silicon material, is easy to realize an ENZ effect, and can realize high modulation efficiency and high modulation depth.

This invention discloses a neuron-like optical switch based on a metal quantum well, comprising a substrate, and a dual-ring resonator and a metal quantum well located on the substrate. The dual-ring resonator includes a first straight waveguide, a first ring waveguide, a second straight waveguide, and a second ring waveguide. The first straight waveguide includes a first input terminal, and the second straight waveguide includes a second input terminal and an output terminal. The first straight waveguide is coupled to the first ring waveguide, and the first ring waveguide is coupled to the second ring waveguide. The metal quantum well is located between the second ring waveguide and the second straight waveguide. Incident light enters the first straight waveguide from the first input terminal, and after coupling, enters the first and second ring waveguides. Pump light enters the second straight waveguide from the second input terminal to irradiate the metal quantum well. By changing the intensity of the pump light, the refractive index of the metal quantum well is modulated, thereby modulating the intensity of the light output from the output terminal. This optical switch exhibits high optical modulation speed and modulation efficiency.

The application discloses a K-band transit-time oscillator based on a last pre-cavity extraction structure, which comprises an inner cylinder and an anode outer cylinder sleeved outside the inner cylinder, a circular annular cavity is formed between the inner cylinder and the anode outer cylinder, the cavity comprises a first drift tube, a first modulation cavity, a second drift tube, a second modulation cavity, a third drift tube, an extraction cavity and a first coaxial output waveguide which are sequentially communicated, the output end of the anode outer cylinder is further provided with a circular annular second coaxial output waveguide, the first coaxial output waveguide and the second coaxial output waveguide are coaxially arranged, the second modulation cavity is further communicated with the second coaxial output waveguide, and the K-band transit-time oscillator is rotationally symmetrical about the central axis of the inner cylinder. The application verifies the feasibility of extracting microwave by the last pre-cavity, and realizes higher efficient output and higher power output.

The present invention discloses a chip integrated communication sensor signal integrated processing method based on a coating structure, wherein a voltage-sensitive two-dimensional layered material coating is coated on the surface of a chip integrated waveguide and a modulation voltage carrying a high-speed communication signal is applied, and the communication signal loading of the transmission light field is realized by adjusting the refractive index of the chip integrated waveguide by changing the free carrier concentration; the low-frequency sensing signal is loaded on the high-frequency communication signal using the all-optical communication signal as a carrier and the environmental variable sensitive two-dimensional layered material coating as a carrier; the sensing signal and the communication signal are demodulated respectively, thus realizing the integrated processing of the communication sensing signal. The present invention makes full use of the performance advantages of the coating structure in high-performance electro-optical modulation and high-sensitivity environmental sensing, effectively expands the functional scope of a single chip integrated optical circuit, and provides a solution for miniaturized, tightly coupled communication sensing integrated equipment.

The application discloses a single-transformer self-powered isolation gate drive circuit and a control method thereof, comprising a transmitting end and a receiving end; the transmitting end comprises an edge detection module and an edge-triggered frequency shift keying module for detecting rising and falling edges of an input drive signal; the edge-triggered frequency shift keying module is connected with a clock signal generation module and the edge detection module; in response to the edge detection module detecting the rising edge of the input drive signal, a first clock signal is output; in response to the edge detection module detecting the falling edge of the input drive signal, a second clock signal is output; the primary side of an isolation transformer is connected with the edge-triggered frequency shift keying module for outputting a high-frequency alternating power signal; and the receiving end is used for converting the high-frequency alternating power signal into a gate drive signal. In this way, modulation is only performed on extremely short signal edges, the transformer can dedicate most of the duty cycle to energy transmission, high modulation depth is achieved, and interference between the power supply and data transmission is improved.

The present invention discloses a chip-integrated communication detection signal integrated processing method based on a coating structure, wherein a voltage-sensitive two-dimensional layered material is coated on the surface of a chip-integrated waveguide and a modulation voltage carrying a high-speed communication signal is applied, and the communication signal loading of the transmission light field is realized by adjusting the waveguide refractive index through electro-induced free carriers; a photosensitive two-dimensional layered material is coated on the surface of a chip-integrated waveguide and receives light intensity irradiation, and the detection signal loading of the transmission light field is realized by adjusting the waveguide refractive index through photo-generated free carriers; the communication signal and the detection signal are combined and transmitted through orthogonal polarization, that is, the integrated processing of the communication detection signal is realized through a single optoelectronic chip. The present invention makes full use of the performance advantages of the coating structure in high-performance electro-optical modulation and high-sensitivity photoelectric effect, and realizes the integrated integration of the communication detection dual system through a single chip, which is a miniaturized, tightly coupled multifunctional terminal device for the Internet of Things.