Multi-stage terahertz modulator based on flexible graphene field effect transistor structure
A field effect transistor and flexible graphite technology, which is applied in the field of terahertz wave applications, can solve the problems of low modulation depth of terahertz modulators and can only achieve two states of switching, and achieves good permeability, large modulation depth, and devices. Stable performance
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[0028] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, and the present invention is not limited to the embodiments.
[0029] In this embodiment, a multilevel terahertz modulator based on a flexible graphene field effect transistor structure is provided, and its structure is as follows figure 1 As shown, a PET substrate 101 is included, and graphene films 102A and 102B, ionic glue dielectric layers 103A and 103B, source electrodes 104A and 104B, drain electrodes 105A and 105B, and gate electrodes 106A and 106B are arranged successively on the upper and lower surfaces of the substrate; PET substrate, full name polyethylene terephthalate, is a flexible material with high transmittance, the transmittance can reach 90%, and the bendable angle is greater than 60°; the graphene films 102A and 102B are single-layer Graphene, resistivity is respectively 200Ω·cm and 50Ω·cm; Described source electrode 104A and 104B, dra...
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