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Multi-stage terahertz modulator based on flexible graphene field effect transistor structure

A field effect transistor and flexible graphite technology, which is applied in the field of terahertz wave applications, can solve the problems of low modulation depth of terahertz modulators and can only achieve two states of switching, and achieves good permeability, large modulation depth, and devices. Stable performance

Active Publication Date: 2017-05-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0004] The purpose of the present invention is to provide a multi-level terahertz modulator based on a flexible graphene field effect transistor structure to overcome the defects of low modulation depth and only two switching states of the existing graphene transistor terahertz modulator The core of the present invention is to adopt a double-layer flexible graphene field-effect transistor structure, and two flexible graphene field-effect transistors are respectively arranged on both sides of the same flexible substrate, which can greatly improve the modulation depth of the device to more than 37%; at the same time, through Reasonable control of two flexible graphene field-effect transistors can obtain multiple modulation states and realize multi-level modulation of terahertz wave amplitude, so that terahertz modulators can achieve higher data rate transmission in a single channel, and can also be widely used Used in systems such as terahertz imaging and detection; in addition, the modulator of the present invention also has the advantages of flexibility, broadband, low insertion loss, etc.

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[0028] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, and the present invention is not limited to the embodiments.

[0029] In this embodiment, a multilevel terahertz modulator based on a flexible graphene field effect transistor structure is provided, and its structure is as follows figure 1 As shown, a PET substrate 101 is included, and graphene films 102A and 102B, ionic glue dielectric layers 103A and 103B, source electrodes 104A and 104B, drain electrodes 105A and 105B, and gate electrodes 106A and 106B are arranged successively on the upper and lower surfaces of the substrate; PET substrate, full name polyethylene terephthalate, is a flexible material with high transmittance, the transmittance can reach 90%, and the bendable angle is greater than 60°; the graphene films 102A and 102B are single-layer Graphene, resistivity is respectively 200Ω·cm and 50Ω·cm; Described source electrode 104A and 104B, dra...

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Abstract

The invention belongs to the technical field of terahertz wave application, and provides a multi-stage terahertz modulator based on a flexible graphene field effect transistor structure. The multi-stage terahertz modulator is used for overcoming the defects that an existing graphene transistor terahertz modulator is small in modulation depth and only the switch-on state and the switch-off state can be achieved. The terahertz modulator is of an up-and-down-symmetry structure, and comprises a substrate, graphene films, ionic gum, source electrodes, drain electrodes and gate electrodes, wherein the graphene films, the ionic gum, the source electrodes, the drain electrodes and the gate electrodes are symmetrically arranged on the upper surface and the lower surface of the substrate, the graphene films are arranged on the surfaces of the substrate, the source electrodes, the ionic gum and the drain electrodes are arranged on the surfaces of the graphene films, and the gate electrodes are arranged on the surfaces of the ionic gum. According to the terahertz modulator, two flexible graphene field effect transistors are arranged on the two sides of the same flexible substrate, the modulation depth of the modulator can be increased by 37% or above, and meanwhile four-stage modulation of the amplitude of terahertz waves can be achieved through cascade controlling.

Description

technical field [0001] The invention belongs to the technical field of terahertz wave applications, and relates to a terahertz modulation device, in particular to a multi-level terahertz modulator based on a flexible graphene field-effect transistor structure. Background technique [0002] Terahertz wave (terahertz wave) refers to electromagnetic waves with a frequency of 0.1-10THz and a wavelength of 30μm-3mm. Its wave band is located between microwave and infrared waves. It has unique electromagnetic characteristics and occupies an important position in the electromagnetic spectrum. Terahertz waves have very important applications in the fields of biomedical diagnosis, wireless communication, radar imaging, electronic countermeasures, homeland security and environmental monitoring, and are of great significance to the national economy and national defense construction. Terahertz modulators, a key core component of terahertz communication systems and radar imaging systems, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01G02F1/015
CPCG02F1/0102G02F1/015
Inventor 文岐业刘洋何雨莲刘浩天陈智杨青慧张怀武
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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