76results about How to "Great modulation depth" patented technology

A method for forming planar-waveguide Bragg grating in a curved waveguide comprises: forming a long chirped planar-waveguide Bragg grating in an Archimedes' spiral such that a long length of the waveguide can fit in a small chip area where the grating is formed in the curved waveguide; using periodic width modulation to form the planar-waveguide Bragg grating on the curved waveguide, and where the formation of the periodic width modulation occurs during the etching of the waveguide core; using rectangular width modulation to create Bragg gratings with a higher order than 1st order to allow a larger grating period and larger modulation depth, using waveguide width tapering while keeping the width modulation period constant to introduce chirp to the planar-waveguide Bragg grating where the index of refraction is a function of waveguide width, by applying a specific width tapering to create a desired arbitrary chirp profile.

Polarization effects are managed to provide differential timing information for localizing disturbances affecting two or more counter-propagating light signals on one or more optical waveguides passing through a detection zone. Activity can be localized to a point for a security perimeter. Events causing optical disturbance can be mapped to points along a straight line, a perimeter or arbitrary pattern or an array. Events cause local changes in optical properties in the optical waveguide, in particular an optical fiber. Short term local changes are distinguishable from phase changes of light travel in the waveguide by managing the polarization state of input and output beams.

A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.

Polarization effects are managed to provide differential timing information for localizing disturbances affecting two or more counter-propagating light signals on one or more optical waveguides passing through a detection zone. Activity can be localized to a point for a security perimeter. Events causing optical disturbance can be mapped to points along a straight line, a perimeter or arbitrary pattern or an array. Events cause local changes in optical properties in the optical waveguide, in particular an optical fiber. Short term local changes are distinguishable from phase changes of light travel in the waveguide by managing the polarization state of input and output beams.

Provided is a GMR-MEMS integrated weak magnetic sensor adopting a plane micro-coil. The base of a micropressure bridge comprises a first base and a second base, the base is fixedly arranged on a spacer, the spacer is fixedly arranged on an insulating substrate, and a bridge body is connected between the first base and the second base. A piezoelectric patch is arranged on the bridge body and between the first base and the second base. A GMR sensitive element is arranged below the bridge body and is symmetrically arranged, magnetic force line collector in the GMR sensitive element comprises a first magnetic force line collector and a second magnetic force line collector, clearance is reserved between the first magnetic force line collector and the second magnetic force line collector, GMR resistors comprises a first GMR resistor, a second GMR resistor, a third GMR resistor and a fourth GMR resistor, the first GMR resistor, the second GMR resistor, the third GMR resistor and the fourth GMR resistor form a Wheatstone bridge, the first GMR resistor is located in the first magnetic force line collector, the second GMR resistor is located in the second magnetic force line collector, and the third GMR resistor and the fourth GMR resistor are located in the clearance. A modulation film is connected on a position, opposite to the modulation film, on the bridge body. The GMR-MEMS integrated weak magnetic sensor adopting the plane micro-coil has the advantages of being simple in structure, low in noise, low in cost, low in hysteresis and the like.

The invention discloses a generating device for generating an optical frequency comb based on time-frequency mapping and a method for estimating the number of output optical frequency comb lines. Experiment devices are shown as in the picture, and the experimental method specifically comprises the following steps: setting an intensity modulator to have an orthogonal offset and work in a linear offset area, and outputting a flat light pulse after the intensity modulation of continuous lightwaves; and applying chromatic dispersion optical fibers and an optical phase modulator to map the time-domain flat light pulse to a frequency-domain flat optical frequency comb. The obtained number of the optical frequency comb lines can be estimated according to the time-domain width of the flat light pulse and the modulation depth of the phase modulator. Compared with the existing scheme, the scheme is utilized to obtain more accurate time frequency mapping through introducing the chromatic dispersion optical fibers.

The invention discloses a silicon substrate integrated coherent light transmitter chip and a transmitter. The silicon substrate integrated coherent light transmitter chip comprises an optical coupler, a light beam splitter, a light beam combining device, a silicon substrate modulator, a fixed phase drift device and a coupling polarization beam combining device. The optical coupler is used for achieving coupling of input end light. The light beam splitter and the light beam combining device are used for achieving the beam splitting and beam combining functions of optical signals. The silicon substrate modulator is a core modulator part, and is used for achieving the function of loading electrical signals to the optical signals, and generation of modulation signal light is finished. The fixed phase drift device is used for achieving fixed rotating of the phase position of the optical signals. The coupling polarization beam combining device is used for combining two paths of signal light with the transverse electric (TE) polarization state into one path of transverse electric and magnetic field (TEM) signal light. The silicon substrate integrated coherent light transmitter chip and the transmitter are suitable for an optical communication system with multi-phase-position modulating and polarization multiplexing, and have the advantages that cost is low, the CMOS technology is compatible, achieving is easy, integrity is high, and packaging is easy.

The invention belongs to the photoelectronic technical field, and discloses an M-Z electrooptical modulator provided with tunable gratings and based on graphene-molybdenum disulfide heterojunctions. The M-Z electrooptical modulator comprises a substrate layer, the in-out tunable gratings, in-out straight-light waveguides, S-type bent Y-branch waveguides and a two-arm straight light waveguide, wherein the in-out tunable gratings, the in-out straight-light waveguides, the S-type bent Y-branch waveguides and the two-arm straight light waveguide are fully embedded in the substrate layer and successively connected with each other, and the two-arm straight light waveguide is successively provided with a second graphene layer, molybdenum disulfide and a first graphene layer from the bottom up; the second graphene layer is connected to a second electrode mounted between the two arms, and each in-out tunable grating is successively provided with a fourth graphene layer, a boron nitride isolation layer and a third graphene layer while the third and the fourth graphene layers are connected to the a fourth electrode and a fifth electrode respectively. Compared with the prior art, the M-Z electrooptical modulator has the advantages of being small in size, easy to integrate, deep in modulation, high in extinction ratio, big in temperature tolerance and the like.

The invention provides a terahertz modulator adopting a graphene metal composite structure. The terahertz modulator consists of a substrate, a metal structure layer, an insulating dielectric layer, a graphene film layer and an electrode. The terahertz modulator applies voltage between the metal structure layer and the electrode to change the chemical potential of graphene, so as to modulate terahertz wave energy penetrating through a device; in addition, through the resonant interaction of the metal structure layer in a specific terahertz wave band, the modulation depth of the device in the resonant wave band is improved. According to the terahertz modulator, the high electron mobility property of the graphene and the resonant property of the metal structure are combined to obtain the terahertz modulator with high speed and large modulation depth, and the terahertz modulator can be widely applied to the fields of terahertz communication, terahertz detection, terahertz imaging and the like.

The invention belongs to the field of terahertz imaging technologies, relates to a modulation device in the related field of terahertz imaging, and in particular provides an optical control terahertz wave amplitude modulator based on a silicon nanoneedle. The optical control terahertz wave amplitude modulator comprises a semiconductor laser, an optical fibre, an optical fibre modulator and a terahertz amplitude modulation structure; laser generated by the semiconductor laser enters the optical fibre modulator through optical fibre coupling; the optical control terahertz wave amplitude modulator is characterized in that the terahertz amplitude modulation structure is composed of a silicon-based bottom layer and a silicon nanoneedle tip array on the surface; and the optical fibre modulator outputs modulated laser incident to the surface of the silicon nanoneedle tip array. According to the optical control terahertz wave amplitude modulator disclosed by the invention, a dual-layer structure including the silicon nanoneedle tip array and a high-resistivity silicon / intrinsic silicon layer is adopted; the silicon nanoneedle tip array has the gradient change of a refractive index on the surface of high-resistivity silicon / intrinsic silicon; reflection of terahertz wave and pumping laser can be reduced simultaneously; the insertion loss of the device is obviously reduced; the pumping laser utilization rate is increased; and the device has relatively high modulation depth under relatively low pumping laser power.

The invention relates to a THz modulator based on graphene-metal composite microstructure and preparation thereof. The THz modulator includes: a polymer flexible substrate layer; a doped semi-conductor epitaxial layer; a A1203 insulating-active region structure composite layer which grows on the doped semiconductor epitaxial layer and is composed by superposing at least one A1203 insulating-active region sub-structure which includes an A1203 insulating layer which is disposed therebelow and a graphene microstructure layer and a metal microstructure layer which grow on the A1203 insulating layer, the metal microstructure layer being disposed inside the graphene microstructure layer and is arranged spaced from the graphene microstructure layer to form the active sub-region structure of the THz; a metal layer which is vapor plated on one active sub-structure in the uppermost and processed to form a metal top electrode. Compared with prior art, according to the invention, the THz modulator can effectively regulate THz waves, has high quality factor, excellent adjustability and great modulation depth, etc.

The invention provides a WS 2 A method for preparing a graphene heterojunction thin film, and a method for building a passively mode-locked fiber laser based on the heterojunction thin film. The method includes: First, a large area of ​​uniform WS 2 The films were prepared by magnetron sputtering, and then the graphene was transferred to |WS 2 thin film, forming WS 2 / graphene heterojunction, and then etched by strong alkali solution to obtain independent WS 2 / Graphene heterojunction thin film, which can be used as a saturable absorber to generate ultrashort pulse laser when placed in the optical fiber optical system. The present invention innovatively adopts WS 2 / graphene heterojunction films while overcoming WS 2 The passive mode-locked pulse width is not narrow enough and the graphene modulation depth is small, so that an ultrashort pulse fiber laser with a large modulation depth can be obtained.

The invention discloses a terahertz space external phase modulator based on a high electron mobility transistor. The phase modulator combines the quick response type high electron mobility transistor with a novel artificial electromagnetic medium resonant structure, so as to be able to conduct quick phase modulation on terahertz waves transmitted in free space. The phase modulator is composed of a semiconductor material substrate, an HEMT epitaxial layer, a periodical artificial metal electromagnetic resonant structure and a muff-coupling circuit. The concentration of two-dimensional electron gas in the HEMT epitaxial layer is controlled through loaded voltage signals, so that the electromagnetic resonance mode of the artificial electromagnetic medium resonant structure is changed, and then phase modulation of terahertz waves is achieved. Over-90-degree phase modulation depth can be realized within a large bandwidth, and the maximum phase modulation depth can be about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use and easy to package.

The invention relates to a graphene-based complementary type asymmetric n-type structure THz modulator and a manufacture method therefor. The THz modulator comprises a polymer flexible substrate layer, an indium tin oxide (ITO) semiconductor sputtering layer and an Al2o3 insulation-graphene active region structure composite layer, wherein the Al2o3 insulation-graphene active region structure composite layer is grown on an ITO layer and is formed by superposing at least one Al2o3 insulation-active region substructure, the Al2o3 insulation-active region substructure comprises an Al2o3 insulationlayer positioned on a lower part and a complementary type graphene microstructure layer grown on the Al2o3 insulation layer, and an electric conduction gel-gel layer is made as an upper electrode positioned on an uppermost active region substructure. Compared with technologies of the prior art, the modulator and the method disclosed in the invention are advantageous in that terahertz waves can beeffectively adjusted; the modulator are high in quality factors (Q)30), great in adjustable performance, and large in modulation depth and the like.

The invention discloses a Schottky gate array type terahertz modulator and a regulation and control method thereof. A periodic gate type metal-semiconductor surface plasmon waveguide structure is adopted, the characteristics of Schottky contact formed by a metal-semiconductor interface and superposition of the Schottky contact and terahertz surface plasmon polariton position are utilized, a positive electrode and a negative electrode are led in and voltage is exerted, so that the terahertz modulation function of the Schottky gate array type terahertz modulator is achieved. The Schottky gate array type terahertz modulator combines a waveguide optical microstructure with a semiconductor electron device together, so that the Schottky gate array type terahertz modulator is well integrated with other electronic components and systems, and the optical functions of terahertz wave transmission and resonance oscillation are achieved. The Schottky gate array type terahertz modulator works from 2.2THz to 3.2THz, the working frequency can be tuned along with the working voltage, the maximum modulation depth is 16dB, and the highest modulation rate is 22MHz. The Schottky gate array type terahertz modulator is an on-chip electronically-controlled high-speed terahertz modulator which is in a small type and can be integrated, and the application requirements for terahertz broadband wireless communications are met.

An emitting source capable of radiating substantial energy in the near infrared spectrum and suitable for use in non-dispersive infrared gas analyzers or other devices is described. Operation can be steady state (DC) or pulsed at high frequency with excellent modulation characteristics. The device consists of a tungsten filament mounted across the pins of a small transistor outline header and centered at the focal point of a parabolic or other shaped reflector. The header assembly is enclosed by a resistance-welded cap and window assembly having a specially sealed sapphire or other suitable IR transmissive window. Fundamental to the operation of the inventive IR emitter is the incorporation of a getter within the header package configured to prevent oxidation degradation of the tungsten filament. An inert gas backfill limits filament evaporation and further extends apparatus lifetime.

The invention provides a uniaxially electrostatic-driven sensor for weak magnetic field measurement. The sensor comprises an insulating substrate, a pair of electrostatic driving electrodes, two pairs of input and output electrodes, a giant magnetoresistive (GMR) sensitive element, two same magnetic line collectors, a micro-cantilever, and a modulated film. The insulating substrate is plated withan electrode and a shallow groove is etched on the insulating substrate. The GMR sensitive element and the two magnetic line collectors are fixed on the surface of the insulating substrate as well asthe central axises of the GMR sensitive element and the two magnetic line collectors are formed into a straight line. The micro-cantilever employs a conductive silicon chip for manufacture and comprises a pedestal and a cantilever, wherein the pedestal is fixed on the insulating substrate and is connected with the cantilever and the modulated film is prepared on a lower surface of an upwarp end of the cantilever. A vertical distance from the modulated film to the GMR sensitive element is 8 to 15 micrometers. According to the sensor for weak magnetic field measurement provided in the invention, a modulation depth is great; a resolution is high; and the structure and the technology of the sensor are simple.

The invention relates to a novel method and a model for improving the modulation depth of a dye doped organic thin film all-optical switch. The method has the following main characteristics that: two linearly polarized light beams which are orthogonal and have a phase difference of 180 degrees are used to excite the switch in an alternating way to speed up a restoration process of the switch, so as to increase the speed and the modulation depth of the switch and increase the speed and modulation depth of the all-optical switch at low exciting power at the same time. The invention also provides a novel all-optical switch model based on the novel method, namely, an orthogonal linearly polarized light excited dye doped organic thin film all-optical switch module. The method has the advantages that: the response speed of the all-optical switch is increased obviously; the modulation depth of the all-optical switch under conditions of a low exciting light power and a high speed switching frequency is obviously improved; and compared with the prior all-optical switch, the orthogonal linearly polarized light excited all-optical switch has a simpler optical path and adjusting method.

The invention belongs to the technical field of terahertz wave application, and provides a multi-stage terahertz modulator based on a flexible graphene field effect transistor structure. The multi-stage terahertz modulator is used for overcoming the defects that an existing graphene transistor terahertz modulator is small in modulation depth and only the switch-on state and the switch-off state can be achieved. The terahertz modulator is of an up-and-down-symmetry structure, and comprises a substrate, graphene films, ionic gum, source electrodes, drain electrodes and gate electrodes, wherein the graphene films, the ionic gum, the source electrodes, the drain electrodes and the gate electrodes are symmetrically arranged on the upper surface and the lower surface of the substrate, the graphene films are arranged on the surfaces of the substrate, the source electrodes, the ionic gum and the drain electrodes are arranged on the surfaces of the graphene films, and the gate electrodes are arranged on the surfaces of the ionic gum. According to the terahertz modulator, two flexible graphene field effect transistors are arranged on the two sides of the same flexible substrate, the modulation depth of the modulator can be increased by 37% or above, and meanwhile four-stage modulation of the amplitude of terahertz waves can be achieved through cascade controlling.

The invention discloses a dark field detection based optical-fiber macrobending coupling structure liquid-level probe. The liquid level sensing principle based on 'CMFTIR (cladding mode frustrated total internal reflection) effect' is proposed for the first time and applied successfully. By means of macrobending, mode field distribution in optical fibers is changed, ratio of cladding mode energy in the optical fibers is increased, and the CMFTIR effect is enhanced; meanwhile, due to macrobending radiation effect, macrobending coupling between the two optical fibers is realized; by means of macrobending coupling, a sensing signal is transferred to a dark field, modulation depth is increased during coupling, higher cladding mode energy ratio can be obtained in the passive optical fiber, and the CMFTIR effect is further enhanced; meanwhile, stability of the coupling structure and consistency of sensors are guaranteed, signal to noise ratio of increased by detection of effectiveness of dark field signals, the liquid-level probe is low in cost and power consumption and high in performance, and discrimination is higher than 4dB.

The invention provides a millimeter wave band fuse and control integrated transmitting-receiving front end and aims at providing a fuse and control integrated transmitting-receiving front end which has high transmitting-receiving switchover speed, great modulation depth, short receiving recovery time and a detection blind zone of less than 15m. The front end is implemented by the following technical scheme of: transmitting an intermediate frequency input signal and a local oscillation signal for superheterodyne mixing via a mixer in a radio frequency emission branch, controlling an absorption switch to achieve conversion of a seeker mode and a fuse mode by using a fuse mode driver after through a band-pass filter and a driving amplifier, introducing high-speed radio frequency switches before and after a power amplifier, achieving transmitting-receiving switchover via a radio frequency switch driver, introducing an amplitude limiter at the front end of a radio frequency receiving branch, keeping a receiving channel in a linear state, and subsequently, allowing a receiving signal to sequentially pass through a low-noise amplifier, the band-pass filter and the mixer to enter an intermediate frequency output channel.

The invention relates to a multi-pass phase modulation device of a high-power laser system. The multi-pass phase modulation device comprises a first half-wave plate, a first thin-film polarization film, a light rotation unit, a first totally-reflecting mirror and a multi-pass phase modulation unit which are sequentially arranged along an incident light beam advancing direction. An optical cavity structure is utilized to make an optical pulse repeatedly pass through a phase modulator, the phase modulation capability of the phase modulator on the optical pulse can be improved, and the multi-pass phase modulation device plays an important role in realizing uniform irradiation of a target surface of the high-power laser system.

The invention provides an optical-control external phase modulator of terahertz space and belongs to the technical field of electromagnetic function devices. The external phase modulator provided by the invention is composed of a semiconductor substrate, an artificial micro structure and a controllable dynamic switch. Through application of external optical induction, an electric conduction rate and a dielectric constant of a switch material are changed. Hence, an electromagnetic resonance mode of the artificial micro structure can be changed and thus phase modulation of terahertz waves can be achieved. The phase modulator provided by the invention has the advantages that a phase modulation depth of over 100 DEG within a large bandwidth and maximum phase modulation capacity of over 150 DEG can be achieved; micro-fabrication techniques can be used for implementation, and the preparation technology is mature and reliable; and a dynamic phase control device which combines a semiconductor material and an artificial microstructure array is achieved, the switch material can be selected from multiple types of high-performance semiconductor materials, multiple control modes can be selected, and the phase modulator has very high practical application values in fields such as terahertz wireless communication, terahertz spectrum technology and terahertz security check imaging.

The invention relates to a terahertz wave modulator based on a strontium titanate all-dielectric metamaterial and a preparation method of the terahertz wave modulator. The terahertz wave modulator comprises a polymer flexible substrate layer, a doped semiconductor epitaxial layer and a SiO2 insulation-strontium titanate micro-structure composite layer, wherein the doped semiconductor epitaxial layer grows on the surface of the polymer flexible substrate layer; the SiO2 insulation-strontium titanate micro-structure composite layer grows on the semiconductor silicon epitaxial layer and comprisesa lower SiO2 insulating layer and a strontium titanate micro-structure layer growing on the SiO2 insulating layer. Compared with the prior art, the prepared modulator has the advantages that the quality factor is high, the adjustability is good, the modulation depth is large, the preparation process is relatively simple, and the modulator is suitable for large-scale production and application.

The invention relates to a resonant cavity type terahertz wave modulator and a preparation method thereof, used for modulation of terahertz wave. The resonant cavity type terahertz wave modulator is composed of a reflecting layer, a substrate layer, a conducting layer, a metal grating and an electrode; the various layers are arranged in parallel, and connected tightly, wherein the reflecting layeris a metal coating; the substrate layer provides physical support for the device; the conducting layer is positioned below the metal grating; the metal grating has a sub-wavelength structure; and theelectrode is arranged on the conducting layer, and used for being electrically connected with a power supply. The resonant cavity type terahertz wave modulator provided by the invention is that: theelectrical conductivity of the conducting layer between the metal gratings is changed in a voltage regulation manner; simultaneously, with the help of the non-oscillation electric field enhancement effect of the metal grating and a resonant cavity structure, depth and multi-frequency modulation on terahertz wave can be realized; disadvantages or deficiencies in the prior art are solved; and the modulator has the advantages of being deep in modulation depth, rapid in modulation speed, low in energy consumption, modulated in multiple frequency band and simple in manufacturing process.

The embodiment of the invention discloses a terahertz spatial light modulator, a preparation method and application. The terahertz spatial light modulator comprises a first substrate, a second substrate and a liquid crystal layer which are oppositely arranged, and spacer particles are arranged between the first substrate and the second substrate to support the liquid crystal layer; an electrode layer and a first orientation layer are arranged on one side, close to the liquid crystal layer, of the first substrate; the electrode layer comprises a plurality of interdigital electrodes arranged inan array; a super-structure surface layer and a second orientation layer are arranged on one side, close to the liquid crystal layer, of the second substrate; the super-structure surface layer comprises a plurality of split ring resonators which are arranged in an array; the orientation directions of the first orientation layer and the second orientation layer are the same, and the orientation directions intersect with the second direction. According to the technical scheme provided by the embodiment of the invention, the spatial light modulation function can be realized in transmission and reflection modes according to different incident polarization directions, so that the technical problems of single function and low integration level of the terahertz spatial light modulator in the prior art are solved.

The invention relates to an airborne wind speed measurement laser radar system. The system comprises a narrow-linewidth laser pulse light source module, a radar transceiving optical antenna module and a signal receiving and processing module. The narrow-linewidth laser pulse light source module comprises a narrow-linewidth seed light source, an optical fiber preamplifier, an acousto-optic modulator, a C-waveband boosting semiconductor optical amplifier and an optical fiber main amplifier. The radar transceiving optical antenna module is connected with the narrow-linewidth laser pulse light source module and comprises an optical fiber circulator, an optical switch and an optical antenna. The signal receiving and processing module is connected with the narrow-linewidth laser pulse light source module and the radar transceiving optical antenna module; the signal receiving and processing module comprises an optical fiber adjustable attenuator, an optical fiber beam combiner, a balance photoelectric detector, a signal processing circuit and an embedded computer. The airborne wind speed measurement laser radar system is reasonable in structural design and stable and reliable in use, can provide real-time wind speed data for an airborne atmospheric data computer, improves the performance of an airplane, and guarantees the flight safety.

MoS prepared by magnetron sputtering 2 Saturable absorber film and corresponding ultrashort pulse fiber laser, the invention provides a large area uniform MoS 2 thin film preparation method, and based on the MoS 2 Passively mode-locked fiber lasers constructed of thin films. The large-area uniform MoS 2 The film is prepared by magnetron sputtering, and then transferred to the optical fiber optical system as a saturable absorber to generate picosecond-level ultrashort pulse laser. MoS of the present invention 2 The saturable absorber film is evenly distributed, stable in quality, simple in preparation method, and can be industrialized. Based on the MoS 2 Ultrashort pulse laser performance of fiber laser with saturable absorber film is stable.

The invention discloses a tunable optical filter based on a PVDF terpolymer which is provided with a glass base plate plated with an antireflection coating, a medium high reflecting film, a metal film, a piezoelectric thin polymer film, a film electrode and an underlay from top to bottom in sequence. The two ends of the metal film, the piezoelectric thin polymer film and the film electrode are provided with glass micro-posts; or the invention is provided with the medium high reflecting film, an ITO film, the piezoelectric thin polymer film, an ITO film, the medium high reflecting film and the underlay in sequence from top to bottom. The invention utilizes the electric deformation effect of the piezoelectric polymer. The strain on the thickness direction of the PVDF terpolymer film prepared by the invention is larger than 15 percent under the action of an electric field of 30V / Mu m. The piezoelectric thin polymer film with larger electric deformation effect has broad application prospect in the application of a tunable optical apparatus part.