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Terahertz wave modulator based on strontium titanate all-dielectric metamaterial and preparation method of terahertz wave modulator

A technology of terahertz waves and strontium titanate, which is applied in instruments, nonlinear optics, optics, etc., can solve the problems of small power load, high temperature ablation, high frequency loss, etc., and achieve large modulation depth, large modulation depth, The effect of low loss

Active Publication Date: 2019-10-11
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]At present, most metamaterials are designed and processed by metal materials. Although they have the advantages of easy processing and forming, they have high temperature ablation, high frequency loss and low power carrying capacity. many problems

Method used

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  • Terahertz wave modulator based on strontium titanate all-dielectric metamaterial and preparation method of terahertz wave modulator
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  • Terahertz wave modulator based on strontium titanate all-dielectric metamaterial and preparation method of terahertz wave modulator

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preparation example Construction

[0062] In the second technical scheme of the present invention, a method for preparing a THz modulator based on strontium titanate microstructure is provided, which includes the following steps:

[0063] (1) Making polymer flexible substrate layer:

[0064] Using ordinary Si as the sacrificial layer, spray a solution containing a plastic flexible substrate on the sacrificial layer, and dry and solidify to obtain a polymer flexible substrate layer;

[0065] (2) Fabrication of doped semiconductor epitaxial layer:

[0066] Form a doped semiconductor epitaxial layer on the polymer flexible substrate layer by epitaxial growth;

[0067] (3) Making SiO 2 Insulation-strontium titanate microstructure composite layer:

[0068] (3-1) Atomic layer deposition of SiO on the doped semiconductor epitaxial layer 2 , Rinse clean, make SiO 2 Insulation;

[0069] (3-2) in SiO 2 Depositing a thin film of strontium titanate on the insulating layer, and then heating and annealing to complete the crystallization...

Embodiment 1

[0084] A THz modulator based on strontium titanate-based elliptical microstructure, including:

[0085] Polymer flexible substrate layer;

[0086] Semiconductor epitaxial layer: doped semiconductor Si layer formed by epitaxial growth method, with good insulation, in order to achieve the purpose of reducing loss;

[0087] SiO 2 Insulation-strontium titanate microstructure composite layer: grown on the semiconductor Si epitaxial layer, composed of a SiO 2 The structure unit composition of the insulating-strontium titanate microstructure layer, which specifically includes SiO located below 2 Insulating layer, and grown on SiO 2 Strontium titanate microstructure layer on the insulating layer.

[0088] In this embodiment, the polymer flexible substrate layer is made of a plastic flexible substrate solution, such as polyimide, with a thickness of 50 μm; the doped semiconductor epitaxial layer is a doped Si layer with a thickness of 10 μm, with carrier doping The concentration is 10 18 cm -3...

Embodiment 2

[0091] This embodiment provides a preparation process of a high quality factor THz modulator with strontium titanate-based elliptical microstructure, which specifically includes the following steps:

[0092] (1) Fabrication of the polymer flexible substrate layer: ordinary Si wafers are used as the sacrificial layer, and the solution containing the plastic polymer flexible substrate layer is sprayed on it by spincoated, and then dried in an oven for about 30 minutes , The temperature range is around 150-200℃ (preferably around 180℃), and then use a high-temperature furnace in inert gas (or N 2 ) Heated to 300-400°C (preferably 350°C) in a protective atmosphere to form a uniform polymer flexible substrate layer;

[0093] (2) Fabrication of doped semiconductor epitaxial layer: A semiconductor Si epitaxial layer with a thickness of 1-10μm (which can be 1μm, 5μm or 10μm, preferably about 5μm in this embodiment) is formed by an epitaxial growth method, with a doping concentration of 3×10...

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Abstract

The invention relates to a terahertz wave modulator based on a strontium titanate all-dielectric metamaterial and a preparation method of the terahertz wave modulator. The terahertz wave modulator comprises a polymer flexible substrate layer, a doped semiconductor epitaxial layer and a SiO2 insulation-strontium titanate micro-structure composite layer, wherein the doped semiconductor epitaxial layer grows on the surface of the polymer flexible substrate layer; the SiO2 insulation-strontium titanate micro-structure composite layer grows on the semiconductor silicon epitaxial layer and comprisesa lower SiO2 insulating layer and a strontium titanate micro-structure layer growing on the SiO2 insulating layer. Compared with the prior art, the prepared modulator has the advantages that the quality factor is high, the adjustability is good, the modulation depth is large, the preparation process is relatively simple, and the modulator is suitable for large-scale production and application.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic materials and devices, and relates to a terahertz wave modulator based on strontium titanate all-dielectric metamaterial and a preparation method thereof. Background technique [0002] Terahertz (THz) waves are between microwave and infrared radiation in the electromagnetic spectrum, and are in the transition region from macro-electromagnetic theory to micro-quantum theory. It has many advantages such as bandwidth, high transmission rate, strong directionality, and high security. It has broad prospects in basic research and practical applications. For example, compared to the microwave band, THz wave has the characteristics of high frequency, large signal bandwidth and high resolution, which is suitable for ultra-wideband and ultra-high-speed 5G communication technology. 0.12THz and 0.22THz have been used as the next generation of terrestrial wireless communication and inter-satell...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/00G02F1/01
CPCG02F1/0009G02F1/0102
Inventor 何晓勇林方婷刘锋
Owner SHANGHAI NORMAL UNIVERSITY
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