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Terahertz modulator based on low-dimension electron plasma waves and manufacturing method thereof

一种等离子体、制造方法的技术，应用在半导体/固态器件制造、半导体器件、仪器等方向，能够解决未见有低维电子等离子体波太赫兹调制器等问题，达到高效调制、调制效率高、大调制深度的效果

Inactive Publication Date: 2015-12-30
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
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Problems solved by technology

[0010] So far, there have been no relevant literature reports on the realization of terahertz modulators using low-dimensional electron plasma waves

Method used

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  • Terahertz modulator based on low-dimension electron plasma waves and manufacturing method thereof
  • Terahertz modulator based on low-dimension electron plasma waves and manufacturing method thereof
  • Terahertz modulator based on low-dimension electron plasma waves and manufacturing method thereof

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Embodiment Construction

[0046] In order to make the object, technical solution and advantages of the present invention clearer, the specific implementation manners of the present invention will be exemplarily described in detail below in conjunction with the accompanying drawings.

[0047]In order to facilitate the understanding of those skilled in the art, the relevant terms provided in the present invention are explained as follows.

[0048] 1) Terahertz wave (terahertz radiation): Terahertz wave refers to the frequency of 0.1-10THz (1THz=1000GHz=10 12 Hz), electromagnetic waves with a wavelength of 30 microns to 3 mm, between the millimeter wave band and the infrared light band of the electromagnetic wave spectrum, also known as submillimeter waves or far infrared rays.

[0049] 2) Terahertz modulator (terahertz modulator): refers to a device or device that can effectively regulate the electromagnetic properties (electric field strength or phase) of a terahertz wave.

[0050] 3) Terahertz cavity ...

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Abstract

The invention provides a terahertz modulator based on low-dimension electron plasma waves, a manufacturing method thereof and a high-speed modulation method. The terahertz modulator comprises a plasmon and a resonant cavity. The resonance absorption mechanism is caused by electronic collective oscillation (plasma waves, namely Plasmon). In order to increase the coupling strength of the plasma waves and the plasmon, a GaN / AlGaN high-electronic-mobility transistor structure with a raster grid is integrated in a terahertz Fabry-Perot resonant cavity, plasmon polariton is formed through strong coupling of the plasmon and the resonant cavity mode. By means of the strong coupling effect, the transmission coefficient of the resonant cavity mode is the maximum at the resonance point, resonance conditions of the plasmon and the resonant cavity mode are adjusted and controlled by changing the raster pressure, and efficient and high-speed modulation for terahertz waves is achieved. The working principle and the achieving technology of the device are introduced in detail, and a good solution is provided for relevant applications.

Description

technical field [0001] The present invention relates to a terahertz modulator and a manufacturing method thereof, in particular to a terahertz modulator capable of high speed and large modulation depth based on low-dimensional electron plasma waves and a manufacturing method thereof. The present invention also relates to a modulation method based on the terahertz modulator. Background technique [0002] Terahertz waves have very important applications in electronics, communications, life sciences, national defense, aerospace and medical treatment. Terahertz functional devices occupy a core position in terahertz systems. In terahertz high-speed imaging and communication systems, high-performance modulators occupy an important position. At present, no terahertz modulator with high modulation speed and large modulation depth electrically driven has been developed in the world, which hinders its development and application. [0003] The existing technical solutions of solid-s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
CPCH01L31/00H01L33/00G02F1/015H01L29/42316H01L29/7786G02F2201/124G02F2201/30G02F2202/101G02F2203/10G02F2203/15G02F1/21G02F2203/13H01L29/2003H01L29/66462G02F1/213H01L21/0254H01L21/28575H01L21/3065H01L21/78H01L29/205H01L29/452H01L29/7787
Inventor 黄永丹秦华张志鹏余耀
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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