89results about How to "Improve characteristic impedance" patented technology

A plasma processing apparatus includes a cathode 54 having a large diameter part 56 and a long thin small diameter part 58, and the upper end surface of the large diameter part 56 faces the plasma forming space 76. The substrate 66 which is to be processed is mounted on the upper end surface of the large diameter part 56. The lower end of the small diameter part 58 is connected via the matching circuit 60 to the high frequency power source 62. The transmission path within the chamber comprises a large diameter coaxial line, a small diameter coaxial line and a radial line which connects them. The large diameter coaxial line includes the large diameter part 56, the first side wall 42 and the insulator 70. The radial line includes the lower surface of the large diameter part 56, the upper surface of the bottom plate 46 and the gap 72 between them. The small diameter coaxial line includes the small diameter part 58, the second side wall 68 and the gap 74. Appropriate impedance matching is achieved between the two coaxial lines and the radial line.

The present invention relates to a resonator device having a stacked arrangement of laminated layers including a plurality of dielectric layers, and at least one resonator comprising a short-circuit electrode, a first capacitor electrode and a second capacitor electrode. Each electrode comprises at least a portion of a layer of electrically conductive material provided on a surface of one of the dielectric layers. The second capacitor electrode is disposed spaced, in the stacking direction, from the short-circuit electrode and the first capacitor electrode. The short-circuit electrode and the second capacitor electrode are electrically interconnected by a first electrical connection comprising at least one via hole penetrating one or more of the dielectric layers.

A circuit board (100) having an insulator layer and a conductor (104) buried in the insulator layer, wherein the insulator layer has a first insulator (101) satisfying a relation μr≧εr, assuming εr is the dielectric constant and μr is the relative permeability, and the conductor is substantially surrounded by the first insulator.

The invention discloses a superconductive microwave nanometer resonant cavity which comprises a dielectric substrate, two coplanar waveguide ground planes arranged on the same surface of the dielectric surface, a coplanar waveguide transmission line central conduction band line and a nanometer cavity, wherein the coplanar waveguide transmission line central conduction band line is arranged between the two coplanar waveguide ground planes, the nanometer cavity is arranged in areas of the coplanar waveguide ground plane and is arranged on the surface of the dielectric substrate, the line width of the nanometer cavity is of a hundred nanometer level, and an opening is formed in the edge, departing from the coplanar waveguide transmission line central conduction band line, of the nanometer cavity. The opening can reduce capacitance of a circuit formed by the nanometer cavity and the coplanar waveguide transmission line central conduction band line, so as to reduce capacitance coupling; the line width of the nanometer cavity is reduced, so that dynamic inductance is enhanced, high characteristic impedance is generated, and coupling capacity between the superconductive microwave nanometer resonant cavity and a quantum system is enhanced.

An electronic component and an electronic-component production method in which the magnitude of a stray capacitance produced between adjacent outer electrodes is controllable. The electronic component includes a chip body and first to fourth outer electrodes. In the chip body, first and second coil block are sandwiched between magnetic substrates. Dielectric layers are interposed between the outer electrodes and the chip body such as to be away from exposed portions of coil patterns in the coil blocks. The dielectric layers have a width larger than a width of the outer electrodes, and a dielectric constant of the dielectric layers is set to be lower than the dielectric constant of the magnetic substrates.

The invention provides an optical phase modulator having a substrate made of an electro-optical material, a signal electrode provided on the substrate and first and second ground electrodes provided on both sides of the signal electrode. The electrodes are provided so that a size of the first gap between the first ground electrode and the signal electrode is smaller than a size of a second gap between the second ground electrode and the signal electrode. Furthermore, an optical waveguide is provided in the first gap as an optical phase modulator and not provided in the second gap. A driving voltage required for the phase adjustments is thereby lowered, the impedance matching is easily made and excellent radio frequency property can be realized.

The invention discloses a 2450-MHz high-power continuous-wave magnetron and a preparation method thereof. The 2450-MHz high-power continuous-wave magnetron comprises an anode cavity combination unit (1), a cathode outgoing line combination unit (2), an output window combination unit (3) connected with the anode cavity combination unit (1), and an output antenna (4) fixed at the anode cavity combination unit (1); the other end of the output antenna (4) is arranged inside the output window combination unit (3); and the anode cavity combination unit (1) is connected with a cavity cooling water inlet-outlet pipe (5). The structure of the provided continuous-wave magnetron is designed reasonably; the power of the magnetron is high and the output power can reach over 30 KW; the service life can reach more than 5000 hours; the microwave leakage is less; and the security performance is high. Besides, according to the preparation method of the continuous-wave magnetron, lots of experiment screening is carried out; and the method has the advantages of reasonable process design and high operability. Moreover, the prepared magnetron with characteristics of high gas tightness, a high vacuum degree, low sparking probability and stable performance enables various defects existing in the prior art to be overcome.

This invention discloses a complementary-conducting-strip transmission line (CCS TL) structure. The CCS TL structure includes a substrate, at least one first mesh ground plane, m second mesh ground planes having m first inter-media-dielectric (IMD) layers interlaced with and stacked among each other and the first mesh ground plane to form a stack structure on the substrate, a second IMD layer being on the stack structure, and a signal transmission line being on the second IMD layer. Wherein, each first IMD layer has a plurality of vias to correspondingly connect the first and the m second mesh ground planes, therein, m≧2 and m is a nature number, and the m second mesh ground planes under the signal transmission line have at least one slit structure.

The invention provides a PCB (printed circuit board). The PCB comprises a first reference layer, a first dielectric layer and at least one signal transmission link, wherein the corresponding signal transmission link is mounted on the first side of the first dielectric layer; the first reference layer is mounted on the second side of the first dielectric layer; each signal transmission link comprises two transmission lines and an alternating current (AC) coupling capacitor module, wherein the two transmission lines are connected through the AC coupling capacitor module; at least one impedance hole is formed in the first reference layer; the at least one impendence hole is in one-to-one correspondence with the corresponding AC coupling capacitor modules in the at least one signal transmission link; different impedance holes are not connected; and the open pore region of each impedance hole in the first reference layer comprises a projection region which is formed by the projection of the AC coupling capacitor module corresponding to the current impedance hole on the first reference layer in an orthographic projection manner. By adoption of the technical scheme, the signal completeness can be improved.

The invention discloses a vertically polarized omnidirectional antenna that is fed by a coaxial line including an inner conductor and an outer conductor. The vertically polarized omnidirectional antenna includes a main vibrator, an insulating medium, and a reference ground which are sequentially stacked and sequentially connected in a top-down manner. The main vibrator includes two vibrator pieces arranged in a crisscross, a straight line where an intersecting line between the vibrator pieces is located perpendicularly passes through the center of the reference ground, a base angle of each vibrator piece is set to be a corner cut, the inner conductor passes through the center of the reference ground and the insulating medium and is connected with the bottom of the main vibrator, and the outer conductor is connected with the reference ground. The vertically polarized omnidirectional antenna stably receives vertically polarized television signals from various directions through cooperatively interaction between the main vibrator, the insulating medium and the reference ground. The insulating medium is a key element of adjusting antenna impedance and being effective in impedance matching, so that an effect of receiving vertically polarized television signals from various directions by the antenna is greatly improved, the impedance is stable, and signal receiving stability and signal quality are greatly improved.

A microelectronic device and method of making the microelectronic device is provided. A dielectric substrate having first and second surfaces is provided. A first component, located in the dielectric substrate between the first and second surfaces of the dielectric substrate is formed. The first component includes a first interface and a second interface. A second component located in the dielectric substrate and spaced relative to the first component is formed, and a first low permittivity material is formed having a predetermined thickness and a first and second surface, the first surface of the low permittivity material is adjacent to or in contact with a first portion of the first interface of the first component. The first low permittivity material substantially reduces capacitive parasitics of the first component, resulting in a substantially higher characteristic impedance of the first component during operation of the microelectronic device.

The invention provides technical scheme of a broadband relativistic klystron amplifier. The broadband relativistic klystron amplifier comprises an input cavity, an output cavity, a first intermediate cavity, a second intermediate cavity, a first output transition section, a second output transition section, a collector, a supporting rod, an output coaxial line inner conductor and an output coaxial line outer conductor which are arranged on a drift tube. According to the scheme provided by the invention, the multi-interspace input cavity, two irregular frequency tuning intermediate cavities and the multi-interspace output cavity are adopted, and the bandwidth of the relativistic klystron amplifier can be increased by 10%.

To provide a magnetic substance-containing insulator that can achieve an effect of increasing the permeability without comparatively increasing the mixing concentration of a magnetic substance and, by applying the thus obtained magnetic substance-containing insulator to a circuit board, that can improve the characteristic impedance and achieve an effect of reducing the power consumption, and to provide a circuit board and an electronic component each using such a magnetic substance-containing insulator.

A magnetic substance-containing insulator 10 includes plural magnetic substance particles 1a, 1b and an insulator 2 holding the plural magnetic substance particles 1a, 1b, wherein a group of the magnetic substance particles is composed of plural particle sizes.

The invention relates to the technical field of communication, and discloses an impedance matching circuit of an antenna and a terminal. In the invention, the impedance matching circuit of the antenna comprises an antenna matching network and an inductive coupler, wherein the antenna matching network and the inductive coupler are serially connected between a radio-frequency circuit and the antenna; the impedance of the antenna is R+jX, R is a resistance value, X is a reactive component, and j is an imaginary part unit; the impedance of the antenna matching network is _jX, the resistance value of the antenna matching network is zero, and the reactive component is equal to X; and the sum of the resistance value of the inductive coupler and the resistance value of the antenna is equal to the resistance value of the radio-frequency circuit. The embodiment of the invention further provides the terminal. Compared with the prior art, the embodiment of the invention can reduce the matching difficulty of the antenna and the radio-frequency circuit, the promotion of antenna performance is facilitated, and the implementation is simple.

The invention relates to a branch line directional coupler, a branch line directional coupler design method and electronic equipment. The coupler includes: a first circuit layer having port transmission lines, a coupling line, and a branch line, wherein the port transmission lines being connected to respective ends of the coupling line, the branch line being connected to the coupling line; a second circuit layer provided with a defected ground structure, wherein the defected ground structure corresponds to the branch line in position; and a dielectric layer arranged between the first circuit layer and the second circuit layer. A large working bandwidth is realized, a multi-line layer structure is adopted, the design method is simple, and miniaturization and integration design of the circuit is easy to realize.