Broadband relativistic klystron amplifier

A relativistic and klystron technology, applied in the field of microwave electronics, can solve the problems of low characteristic impedance of the output cavity, single frequency spectrum, high Q value, etc., and achieve the effects of improving angular uniformity, increasing the number of gaps, and widening the bandwidth

Active Publication Date: 2015-08-12
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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Problems solved by technology

At present, in traditional relativistic klystron amplifiers, the structure of single-gap input cavity, inductive intermediate cavity (the frequency of the intermediate cavity is higher than the operating frequency, that is, the intermediate cavity is inductive) and single-gap output cavity is generally used, which affects the relativistic klystron. There are three main factors for the bandwidth of the amplifier: 1. The Q value of the input cavity is high and the characteristic impedance is low, so that the beam bandwidth of the electron beam after passing through the input cavity is not high
2. The number of modulation cavities is small, and in order to increase the modulation current intensity, the frequency of the modulation cavity cold cavity is generally higher than the working frequency (the cavity is inductive), resulting in

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  • Broadband relativistic klystron amplifier

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[0020] In order to clearly illustrate the technical characteristics of this solution, the following describes this solution through a specific implementation and in conjunction with the accompanying drawings.

[0021] It can be seen from the drawings that the working principle of this solution is: the high-frequency signal output by the microwave seed source is fed into the three-gap input cavity and a high-frequency electric field is established on the cavity gap. When the DC electron beam emitted by the cathode passes through the input cavity gap under the constraint of the axial magnetic field, the velocity of the electrons is modulated under the action of the input cavity gap high-frequency electric field, and the modulated electron beam then enters the drift tube behind the input cavity Get clustered. When the cluster electron beam passes through the gap between the first intermediate cavity and the second intermediate cavity, a high-frequency induced current will be generat...

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Abstract

The invention provides technical scheme of a broadband relativistic klystron amplifier. The broadband relativistic klystron amplifier comprises an input cavity, an output cavity, a first intermediate cavity, a second intermediate cavity, a first output transition section, a second output transition section, a collector, a supporting rod, an output coaxial line inner conductor and an output coaxial line outer conductor which are arranged on a drift tube. According to the scheme provided by the invention, the multi-interspace input cavity, two irregular frequency tuning intermediate cavities and the multi-interspace output cavity are adopted, and the bandwidth of the relativistic klystron amplifier can be increased by 10%.

Description

technical field [0001] The invention relates to the field of microwave electronics, in particular to a broadband relativistic klystron amplifier. Background technique [0002] Relativistic klystron amplifier (RKA) is one of the most potential high-power microwave generating devices. Because RKA has the advantages of high power, high efficiency, output microwave phase and amplitude stability, it has been widely used in communication, radar, navigation, linear Accelerators, etc. In the field of accelerators, klystrons with high peak power and narrow band work are mainly used. However, in some early warning radar systems, due to the need for anti-jamming, the klystron is required to have a certain working bandwidth, and the bandwidth of the ordinary RKA is not more than 5%, which limits its application range. Therefore, expanding the bandwidth of the relativistic klystron amplifier is One of the key points in RKA research. [0003] The RKA bandwidth is mainly determined by t...

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Application Information

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IPC IPC(8): H01J25/10H01J23/36H01J23/18
Inventor 雷禄容袁欢黄华刘振帮黄吉金何琥陈昭福
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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