Terahertz space phase modulator based on high electron mobility transistor

A technology with high electron mobility and spatial phase, applied in the field of fast dynamic functional devices, can solve the problem that communication devices cannot be directly applied to the terahertz band, etc., to avoid difficult processing, increase modulation bandwidth, and enhance resonance strength.

Active Publication Date: 2016-05-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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AI Technical Summary

Problems solved by technology

Since the required size of functional devices in the terahertz band is on the order of microns or even nanometers, communication devices in the microwave band cannot be directly applied to the terahertz band.

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  • Terahertz space phase modulator based on high electron mobility transistor
  • Terahertz space phase modulator based on high electron mobility transistor
  • Terahertz space phase modulator based on high electron mobility transistor

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Embodiment Construction

[0025] The present invention combines HEMT and Metamaterials ingeniously and effectively into a triode structure, utilizes the high-speed dynamic characteristics of HEMT and the precise control ability of Metamaterials on electromagnetic waves, and rapidly controls artificial electromagnetic waves through the high electron mobility characteristics of the two-dimensional electron gas in HEMT. The resonant mode conversion of the medium enables the HEMT terahertz wave phase modulator to achieve a phase modulation depth of more than 90 degrees in a wider frequency band, realizing fast and efficient phase modulation of terahertz waves in space. Simulation calculation and experimental verification show that this is a HEMT terahertz fast phase modulation device with large phase modulation depth and wide modulation bandwidth, simple structure and easy processing.

[0026] The invention comprises a semiconductor substrate (1), an epitaxial layer (2), a modulation unit array (5), a posit...

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Abstract

The invention discloses a terahertz space external phase modulator based on a high electron mobility transistor. The phase modulator combines the quick response type high electron mobility transistor with a novel artificial electromagnetic medium resonant structure, so as to be able to conduct quick phase modulation on terahertz waves transmitted in free space. The phase modulator is composed of a semiconductor material substrate, an HEMT epitaxial layer, a periodical artificial metal electromagnetic resonant structure and a muff-coupling circuit. The concentration of two-dimensional electron gas in the HEMT epitaxial layer is controlled through loaded voltage signals, so that the electromagnetic resonance mode of the artificial electromagnetic medium resonant structure is changed, and then phase modulation of terahertz waves is achieved. Over-90-degree phase modulation depth can be realized within a large bandwidth, and the maximum phase modulation depth can be about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use and easy to package.

Description

technical field [0001] The invention belongs to the technical field of electromagnetic functional devices, focusing on fast dynamic functional devices in the terahertz band. Background technique [0002] As one of the most critical core technologies in terahertz communication systems, terahertz wave dynamic functional devices—terahertz external modulators have become the focus of terahertz science and technology research. Since the size required for functional devices in the terahertz band is on the order of microns or even nanometers, communication devices in the microwave band cannot be directly applied to the terahertz band. Since 2004, a number of articles on terahertz wave external modulators have been published in top international natural science journals such as Nature / Science, including materials based on doped silicon, gallium arsenide, phase change materials, and graphene. Combined with artificial electromagnetic media (Metamaterials), the modulation of terahertz...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/015
CPCG02F1/015
Inventor 张雅鑫赵运成梁士雄乔绅杨梓强
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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