35results about How to "Avoid difficult processing" patented technology

A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high electron mobility transistor with a novel metamaterial resonant structure, so as to rapidly modulate terahertz wave phases in a free space. The phase modulator includes a semiconductor substrate, an HEMT epitaxial layer, a periodical metamaterial resonant structure and a muff-coupling circuit. A concentration of 2-dimensional electron gas in the HEMT epitaxial layer is controlled through loading voltage signals, so as to change an electromagnetic resonation mode of the metamaterial resonant structure, thereby achieving phase modulation of terahertz waves. The phase modulator has a phase modulation depth of over 90 degrees within a large bandwidth, and a maximum phase modulation depth is about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use, and easy to package.

The invention discloses a storage rack assembly for a refrigerator and the refrigerator with the storage rack assembly. The storage rack assembly for the refrigerator comprises shelves and a storage rack. The shelves are suitable for being horizontally arranged in a refrigerating chamber of the refrigerator. The storage rack is arranged on the bottoms of the shelves in the mode of being capable of moving back and forth. The storage rack can be wholly drawn out forwards from the bottoms of the shelves and separated from the shelves. According to the storage rack assembly for the refrigerator, the bottoms of the shelves are provided with the storage rack capable of being drawn, and therefore the internal space utilization rate of the refrigerator is increased; meanwhile, objects on the storage rack are picked and placed conveniently; moreover, the phenomenon that due to the fact that the number of protruding ribs on a refrigerator body is large, machining is not easy can be avoided; in addition, the practicality and the structure novelty of the storage rack assembly are improved.

The invention provides an optical-control external phase modulator of terahertz space and belongs to the technical field of electromagnetic function devices. The external phase modulator provided by the invention is composed of a semiconductor substrate, an artificial micro structure and a controllable dynamic switch. Through application of external optical induction, an electric conduction rate and a dielectric constant of a switch material are changed. Hence, an electromagnetic resonance mode of the artificial micro structure can be changed and thus phase modulation of terahertz waves can be achieved. The phase modulator provided by the invention has the advantages that a phase modulation depth of over 100 DEG within a large bandwidth and maximum phase modulation capacity of over 150 DEG can be achieved; micro-fabrication techniques can be used for implementation, and the preparation technology is mature and reliable; and a dynamic phase control device which combines a semiconductor material and an artificial microstructure array is achieved, the switch material can be selected from multiple types of high-performance semiconductor materials, multiple control modes can be selected, and the phase modulator has very high practical application values in fields such as terahertz wireless communication, terahertz spectrum technology and terahertz security check imaging.

The invention discloses a terahertz multiband modulator based on a high electron mobility transistor, belongs to the technical field of an electromagnetic functional device, especially for a rapid dynamic functional device of a terahertz waveband. The HEMT (High Electron Mobility Transistor) and Metamaterials are combined; the Metamaterials are designed optimally and comprise various complex resonant modes; the high speed dynamic feature of the HEMT and the precise control capacity of the Metamaterials to electromagnetic waves are utilized; the distribution change of two-dimensional electron gas in the HEMT is controlled through an impressed voltage; further the resonant mode conversion of the artificial Metamaterials is controlled; the HEMT terahertz modulator has modulation effects of high modulation depth and high modulation efficiency in modulation frequency bands of four amplitudes; and moreover, the phase modulation depth in a phase modulation frequency band reaches more than 90 degrees.

The invention relates to the technical field of liquid crystal display, and provides a backlight unit, a backlight source, a backlight source control method and a display device. The backlight unit consists of an LED (Light-Emitting Diode) and a light guide plate, wherein the light guide plate comprises a light introducing surface and a light emitting surface which is opposite to the light introducing surface; and light rays emitted by the LED enter the light introducing surface of the light guide plate, and are emitted from the light emitting surface of the light guide plate. The light guide plates and the LED construct a plurality of independent backlight units, and light rays emitted by the LED are scattered possibly through a plurality of light guide plates, so that the light mixing distance is reduced remarkably, the thickness of a device is reduced, and the problem of processing difficulty of a large-sized light guide plate is solved. Moreover, a plurality of backlight units are controlled separately, so that an entire backlight light source is controlled dynamically in real time, and the aims of lowering power consumption and increasing contrast are fulfilled.

The invention provides a battery pack structure and an electric vehicle, and relates to the technical field of a battery structure of the electric vehicle. The battery pack structure comprises a negative electrode aluminum row, a lower supporting frame, a cell, an upper supporting frame and a positive electrode aluminum row, wherein the negative electrode aluminum row is fixedly connected with the lower supporting frame; the lower supporting frame is fixedly connected with the upper supporting frame; the upper supporting frame is fixedly connected with the positive electrode aluminum row; and the cell is fixedly mounted between the lower supporting frame and the upper supporting frame. According to the scheme, the cell and the positive electrode aluminum row and the negative electrode aluminum row are in tight contact, so that small deformation and low cost are realized; and meanwhile, the assembling difficulty and detaching difficulty of the battery pack are lowered, and relatively low vibration resistance and relatively low contact resistance are realized.

The invention discloses a machining die for a shaft tube hollow tube. The machining die comprises an upper pre-upsetting die, a lower pre-upsetting die and an extrusion head. The lower pre-upsetting die can support a blank; when the upper pre-upsetting die and the lower pre-upsetting die are in a closed state and the extrusion head is located in a hollow portion between the upper pre-upsetting die and the lower pre-upsetting die under the effect of equipment, a cavity formed among the extrusion head, the upper pre-upsetting die and the lower pre-upsetting die is identical to the shaft tube hollow tube in structure. By applying the machining die for the shaft tube hollow tube, the forged shaft tube hollow tube blank is provided with a basically formed inner hole structure, so that the drilling time of subsequent machining can be shortened, the subsequent machining allowance is small, and then the machining time is shortened, and the cost is reduced. In addition, by applying the machining die, the problem that the machining difficulty of a traditional inner hole is high is avoided, and the production efficiency is improved remarkably. The invention further discloses a machining process of the shaft tube hollow tube, and according to the machining process, the machining die for the shaft tube hollow tube is adopted.

The invention belongs to the technical field of electromagnetic functional devices, and focuses on dynamic functional devices in the terahertz band. The invention adopts the phase modulation unit structure of vanadium dioxide C-shaped split ring, metal C-shaped split ring, and vanadium dioxide and metal composite split ring, and realizes the discontinuous change of phase according to the size of the structure, the orientation of the opening and the change of the split ring material; Utilize the phase change characteristics of vanadium dioxide to change the resonant mode of the structure, thereby changing the transmission phase of the structure, and realize the control of the dynamic focus of the metalens; the three phase modulation unit structures arranged in an array on the substrate have the ability of multiple phase selection function to realize terahertz beam convergence. Under laser irradiation, the x-line polarized terahertz wave is vertically incident, and the long-distance y-polarized beam is focused; under non-laser irradiation, the x-line polarized terahertz wave is vertically incident, and the long-distance y-polarized beam is focused . Finally, the dynamic switching between the far and near focal points is realized, and the dynamic modulation of the metalens is completed.

The invention discloses an extruding machine, and belongs to the technical field of extruding. The technical problem that in the prior art, a movable beam center line cannot be adjusted is solved. Theextruding machine comprises a rear beam, a movable beam and a front beam, four expanding stand columns are arranged between the rear beam and the front beam, the movable beam is arranged on the fourexpanding stand columns in a sliding manner, the rear beam is provided with a main oil cylinder used for driving the movable beam to axially move in a reciprocating manner on the expanding stand columns, sliding plates which are arranged axially are arranged on the expanding stand columns, sliding grooves are formed in the sliding plates, the movable beam is provided with four mounting bosses which are distributed in a diagonal line manner, two adjusting mechanisms which are distributed in a front and back manner are arranged on the mounting bosses, each adjusting mechanism comprises a slidingblock, an adjusting screw and a locking nut, the sliding blocks are arranged in the sliding grooves in a sliding manner, the adjusting screws are screwed to the mounting bosses in a threaded manner and are locked and fixed through the locking nuts, and one ends of the adjusting screws are in rotation fit with the ball faces of the sliding blocks.

The invention provides a fingerprint identification display device, a preparation method thereof and a fingerprint identification display device. The fingerprint identification display device comprises a photoelectric sensor array layer, a collimator and a display device which are stacked in sequence, wherein the collimator comprises at least two transparent polyimide layers and at least one shading metal layer; The fingerprint identification display device is simple in structure, small in number of film layers, simple in preparation process and capable of reducing the thickness of a product and solving the problem that in the prior art, a collimator is directly prepared above a photoelectric sensor array layer through an organic photoelectric material, and process difficulty is large.

The invention discloses a multi-pixel wavefront scanning modulator based on a high electron mobility transistor (HEMT), belongs to the technical field of electromagnetic functional devices. Accordingto the invention, the HEMT and the artificial electromagnetic medium resonance structure are combined, and a multi-pixel structure system is formed through multi-unit combination. Rapid multi-pixel modulation of the wavefront can be realized. External voltage is used for independently controlling the pixel units of the wave-front modulator, and the concentration of the two-dimensional electron gasin an HEMT epitaxial layer is controlled through the loaded voltage signals, and therefore the electromagnetic resonance mode of the artificial electromagnetic medium resonance structure is changed.Rapid modulation of the wavefront can be realized. The multi-pixel wavefront scanning modulator can be used for a wavefront rapid scanning imaging system, and has a high amplitude modulation depth ata working frequency point. The simulation result can reach 90%. The multi-pixel wavefront scanning modulator is simple in structure, easy to machine, high in modulation speed, convenient to use and easy to pack.