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A broadband terahertz modulator based on graded aperture

A modulator, terahertz technology, applied in the direction of instruments, nonlinear optics, optics, etc., can solve the problem of narrow modulation bandwidth, achieve the effect of increasing the modulation bandwidth, simple operation, and easy preparation

Active Publication Date: 2020-09-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Currently, the effective modulation bandwidth is relatively narrow in terahertz modulators using HEMTs combined with metamaterials

Method used

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  • A broadband terahertz modulator based on graded aperture
  • A broadband terahertz modulator based on graded aperture
  • A broadband terahertz modulator based on graded aperture

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Embodiment Construction

[0021] The technical scheme of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0022] The invention cleverly combines HEMT and metamaterials, utilizes HEMTs with high-speed dynamic characteristics and metamaterials to control electromagnetic waves, and changes the concentration of two-dimensional electron gas in HEMTs through electronic control, so as to realize the on-off of the opening and achieve the mode conversion. Purpose.

[0023] Such as figure 1 As shown, it is a schematic diagram of the overall structure of a broadband terahertz modulator based on a tapered opening provided by the present invention; it includes a semiconductor substrate 1, an epitaxial layer 2 on the semiconductor substrate, and a modulation unit array on the epitaxial layer 5. Positive voltage loading electrode 3 and negative voltage loading electrode 4; as figure 2 As shown, it is a schematic diagram of four modulation unit...

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Abstract

The invention discloses a wideband terahertz modulator based on a tapered aperture, which belongs to the technical field of electromagnetic functional devices. It includes a semiconductor substrate, an epitaxial layer on the semiconductor substrate, an array of modulation units on the epitaxial layer, positive voltage loading electrodes, and negative voltage loading electrodes; wherein each modulation unit includes a disconnected "I"-shaped structure And the semiconductor-doped heterostructure, the semiconductor-doped heterostructure is located under the opening of the disconnected "I"-shaped structure; in adjacent modulation units, the positions of the openings of the disconnected "I"-shaped structure are different, in In the same row, the opening positions are distributed linearly, that is, have a certain slope, and the slopes of the opening positions in two adjacent rows are opposite. In the broadband terahertz modulator of the present invention, the positions of openings in adjacent modulation units are different, so that the lengths of adjacent resonant metal rods are different, and there are multiple resonance modes in the disconnected state of the HEMT, which increases the modulation bandwidth, and the modulation bandwidth can reach 100GHz.

Description

technical field [0001] The invention belongs to the technical field of electromagnetic functional devices, and in particular relates to a wideband terahertz modulator based on a tapered aperture. Background technique [0002] With the rapid development of terahertz technology, the performance of various terahertz functional devices is also increasing. Among them, the terahertz modulator, as the core component of the terahertz wireless communication system and the terahertz imaging system, has important research value. A large number of studies have shown that through semiconductors, VO 2 , graphene, etc. combined with metamaterials, and under external stimuli such as temperature, light, and electric field, can achieve effective regulation of terahertz waves. Combining metamaterials with semiconductors, the resulting composite terahertz dynamic devices can realize dynamic control of the amplitude and phase of terahertz waves within a specific frequency point or frequency ra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/015
CPCG02F1/015G02F2203/13
Inventor 郭小庆张雅鑫梁士雄
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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