Wavefront scanning modulator based on high electron mobility transistor
A technology with high electron mobility and fast scanning, applied in the direction of electric solid-state devices, semiconductor devices, circuits, etc., can solve the problem that the spatial light modulator technology cannot be directly applied to the terahertz band, achieve good practical application prospects, and avoid high difficulty The effect of processing and mature technology
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[0027] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0028] This embodiment provides a wavefront rapid scanning imaging modulator based on high electron mobility transistors, its structure diagram is as follows figure 1 As shown, it includes semiconductor 1, epitaxial layer 2, positive voltage loading pole 3, negative voltage loading pole 4 and 4*4 pixel units 5; epitaxial layer 2 is located on the upper surface of semiconductor substrate 1, positive voltage loading pole 3, negative voltage loading pole 4 The voltage loading electrode 4 and the pixel unit 5 are located on the upper surface of the epitaxial layer 2;
[0029] Each pixel unit 5 includes 4*4 subunits, and the structural diagram of the subunits is as follows image 3 As shown, each subunit includes a metal I-shaped artificial microstructure 6, a gate connection line 7 and a semiconductor-doped heterostructure 8; there is an opening in the mid...
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