159results about How to "High modulation rate" patented technology

Being in use for illumination, and communication to remote communication equipment (RCE), the system includes illumination communication equipment (ICE), illumination communication terminal (ICT), and communication terminal (CT). Receiving source signal from RCE, ICT converts the received source signal to light signal transmitted wirelessly in light signal mode. Converting the received light signal to electric signal, ICT transfers the electric signal to CT. receiving the electric signal from ICT, CT carries out relevant process, or sends the processed electric signal to ICT, i.e. reverse transmission. Light sent from ICE / ICT can be as light source of light wireless communication or illuminated light sources. The invention overcomes prejudice that illumination light cannot be as carrier of wireless communication. The invention is suitable to indoor, and outdoor.

The making process of lithium niobate modulator includes making substrate with lithium niobate crystal with proper crystal cutting direction and electric field utilizing direction; making light waveguide on the lithium niobate crystal; making modulating electrodes including central signal electrode and earth electrode and to form push-pull structure with the light waveguide; making microstrip matching structure in the input and output of the modulating electrodes; and setting buffering layer structure between the modulating electrode and light waveguide. Owing to the smart design of the modulating electrodes, the light waveguide and the matching structure in between, the lithium niobate modulator has high modulating rate, low insertion loss, high extinction ratio, low hemi-wave voltage, less electric reflection, and high reliability.

The invention discloses a silicon-based lithium niobate high-speed light modulator and a preparation method thereof. The modulator comprises a silicon substrate wafer, a lower silicon dioxide cladding, lithium niobate film, an optical waveguide, a metal electrode, a silicon V-shaped groove and a coupling optical fiber, wherein the lower silicon dioxide cladding is located on the upper surface of the silicon substrate wafer, and the lithium niobate film is located on the lower silicon dioxide cladding. The silicon-based lithium niobate high-speed light modulator has the advantages that heterogeneous integration of a lithium niobate single crystal body and a silicon single crystal body is achieved; by utilizing the thin-film lithium niobate wafer and the characteristics such as low dielectric constant and low dielectric loss of the lower silicon dioxide cladding, improvement of modulation rate (or modulation bandwidth) of the lithium niobate light modulator can be achieved; by utilizingthe thin-film lithium niobate wafer and the high insulativity of the lower silicon dioxide cladding, intensity increase of microwave electromagnetic fields distributed in the lithium niobate film canbe achieved, the modulation efficiency of electric fields to light fields is improved, and the driving voltage of the modulator is reduced.

The invention provides a light quantum phase modulating system, which utilizes a high-speed serial data transceiver to generate two paths of high-speed electric pulse signals. After the signals pass through a gain network, the signals are used for driving an electro-optic phase modulator (PM) so as to realize the phase modulation of light quantum signals. According to the light quantum phase modulating system, a digital to analog converter or an analogue switch does not need to be used and a high-speed digital signal is directly utilized to realize a four-phase modulating function needed by a BB84 quantum secrete key distribution protocol; and therefore, the limitation to a modulating speed by links including digital-to-analogue conversion, analogue switch switching and the like can be avoided. A dual-pole electro-optic phase modulator scheme also can effectively reduce the range requirements of a modulation driving signal; and the light quantum phase modulating system is good for realizing high-speed phase modulation meeting requirements of quantum secrete key distribution.

The invention provides a graphene field effect transistor terahertz wave modulator and a manufacture method thereof and aims to increase the modulating speed and depth of the graphene field effect transistor terahertz wave modulator. The graphene field effect transistor terahertz wave modulator comprises a semiconductor substrate, and a medium layer, a graphene film and source and drain electrodes which are arranged on the substrate, and an annular grating electrode which is arranged on the back of the substrate. The terahertz wave modulator is characterized in that the medium layer is an Al2O3 layer, and the thickness ranges from 5 to 100nm; the Al2O3 is deposited by the ALD (atomic layer deposition) method, and the Al2O3 is high in evenness, is free of defects and pores and has better voltage resistance; the leakage current is reduced greatly. The modulating speed of the terahertz wave modulator can be 178 KHz, the corresponded modulating depth is larger than 22%, and the modulating speed and depth are increased significantly; the terahertz wave modulator can be widely applied to the fields of terahertz wave communication systems, terahertz wave detection and terahertz wave imaging.

The invention discloses a micro-ring resonant cavity electro-optical modulator based on a graphene / molybdenum disulfide heterojunction. The micro-ring resonant cavity electro-optical modulator comprises a substrate layer, a direct-light waveguide, a micro-ring resonant cavity waveguide and a graphene covering layer. The direct-light waveguide and the micro-ring resonant cavity waveguide are embedded into the substrate layer, and a coupling space is reserved between the direct-light waveguide and the micro-ring resonant cavity waveguide. The upper surface of the micro-ring resonant cavity waveguide is covered with a part of the graphene covering layer. The graphene covering layer comprises a first graphene layer, a second graphene layer, molybdenum disulfide, a first electrode and a second electrode, wherein the first graphene layer and the second graphene layer are isolated by the molybdenum disulfide, the first graphene layer stretches outwards from one side of the micro-ring resonant cavity waveguide and is connected with the first electrode, and the second graphene layer stretches outwards from the other side of the micro-ring resonant cavity waveguide and is connected with the second electrode. The micro-ring resonant cavity electro-optical modulator has extremely low optical loss, a low thermo-optical coefficient, low insertion loss, large environment temperature tolerance, a good modulation depth and a high extinction ratio.

The invention relates to a differential-type circularly-polarized laser carrier communication system, which relates to the field of the laser communication of a free space. The system is mainly composed of a laser transmitting part and a laser receiving part. The laser transmitting part comprises a laser (1), a first beam splitter (2), a first modulator (3), a second modulator (4), a first quarter slide (5), an optical transmitting lens (6) and a signal encoding module; and the laser receiving part comprises an optical receiving lens (7), a second quarter slide (8), a second beam splitter (9), a first receiver (10), a second receiver (11) and a signal decoding module. The circularly-polarized laser is used as an information carrier, and a differential method is used for modulation and receiving, so that the interference resistance of the laser in the long-distance transmission in the atmosphere can be greatly improved.

The invention provides a frequency shift keying (FSK) optical modulation signal generator based on a silicon-based micro ring resonator, comprising an adjustable laser, a radio frequency signal generator, a Mach-Zehnder modulator, a data source and a silicon-based micro ring resonator system, wherein the adjustable laser is connected with the input end of the Mach-Zehnder modulator to transmit optical carrier signals, the radio frequency signal generator is connected with the radio frequency interface of the Mach-Zehnder modulator to transmit high frequency electric signals, the output end of the Mach-Zehnder modulator is connected with the silicon-based micro ring resonator system to transmit carrier suppression optical signals, and the data source is connected with the silicon-based micro ring resonator system to transmit electric signals with adjustable amplitude. The silicon-based micro ring resonator used in the invention has simple structure and small volume, easy integration, simple modulation, convenient control and high modulation velocity which is up to a plurality of Gbit / s, and the radius of the micro ring is only a plurality of microns to dozens of microns.

The invention discloses a planar waveguide type near-and-mid infrared light modulator based on graphene-chalcogenide glass, and belongs to the technical field of electro-optical modulators. The optical modulator solves the problems in modulation and demodulation of integrated photonic devices based on optical signals of near-and-mid infrared light ranging from 1.55 microns to 3 microns. The modulator comprises a substrate layer, ridge-shaped light waveguide layers, a first strut and a second strut, wherein the ridge-shaped light waveguide layers, the first strut and the second strut are arranged on the substrate layer; a first graphene layer and a second graphene layer are arranged on the ridge-shaped light waveguide layers; the first graphene layer extends to the upper surface of the first strut, and the second graphene layer extends to the upper surface of the second strut; isolation medium layers are arranged between the ridge-shaped optical waveguide layer and the first graphene layer, between the ridge-shaped optical waveguide layer and the second graphene layer, between the first graphene layer and the second graphene layer, between the first graphene layer and the first strut, and between the second graphene layer and the second strut respectively; a first electrode is arranged on the first graphene layer on the first strut, and a second electrode is arranged on the second graphene layer on the second strut. The modulator is used for signal modulation and demodulation in the integrated photonic devices.

The invention discloses an all-optical modulator apparatus based on black phosphorus. The apparatus includes a pumped laser source, a direct current continuous laser source, a reflector, a dichroic laser beam combiner, a convex lens, a micro nano optical fiber, the black phosphorus, and a bandpass optical filter. The black phosphorus of the invention has good saturated absorption characteristic of spectra from visible light to near infrared light, and can work in a broadband spectrum range. The all-optical modulator apparatus based on the black phosphorus employs the all-optical modulation, overcomes the problem of modulation speed bottleneck of the electro-optical modulation, and has the advantages of the fast optical modulation speed, the low power consumption, the high modulation depth, and compatibility with an optical fiber system.

The invention discloses a coherent light detection system and method for optical fiber delay line phase control. The output end of an optical fiber laser device is connected with the input end of an optical fiber branching unit. A first output end of the optical fiber branching unit is connected with an input end of a modulator. The other input end of the modulator is connected with an external RF signal generator. The output end of the modulator is connected with an input end of an optical fiber combiner. A second output end of the optical fiber branching unit is connected with the other input end of the optical fiber combiner. An optical fiber delay line is connected in series between the output end of the modulator and an input end of the optical fiber combiner, or the optical fiber delay line is connected in series between the second output end of the optical fiber branching unit and the other input end of the optical fiber combiner. The output end of the optical fiber combiner is connected with the input end of a photoelectric detector. According to the coherent light detection system and method for optical fiber delay line phase control, phase control can be achieved through the optical fiber delay line, and phase difference between reference light and a signal light branch is compensated, so that receiving sensitivity, the signal to noise ratio and system output stability are improved.

The invention belongs to the field of quantum private communication and specifically relates to a single photon source based on a Faraday-Sagnac loop and a realization method thereof. The single photon source is characterized in that a system of the single photon source includes a laser device, a circulator, a polarization analyzer and the Faraday-Sagnac loop which includes a four-port optical-fiber beam splitter, a phase modulator and a Faraday rotating mirror. Continuous light output by the laser device enters the four-port optical-fiber beam splitter via the circulator. The four-port optical-fiber beam splitter divides the continuous light into two beams of orthogonal-linear polarized light, which are identical in amplitude and phase. The two beams of linear polarized light are transmitted in opposite directions along the Faraday-Sagnac loop and modulated by the phase modulator at different moments. The two beams of modulated linear polarized light are overlaid in the four-port optical-fiber beam splitter and then enter the polarization analyzer after being coupled by the circulator. The advantages of the single photon source based on the Faraday-Sagnac loop are that generated light pulses have a high extinction ratio and a narrow spectral width so that polarization dispersion of the light pulses which are transmitted in a long-distance optical fiber is reduced.

The method for monitoring a wireless link of a wireless node of a CPE device during operation of the CPE device, comprises the steps of taking samples of one or several of the following parameters in a defined time interval: Received Signal Strength (RSSI), modulation rate (Physical Layer Rate) and / or the number of spatial streams used for the wireless link, and calculating an average for that parameters by including a filtering of said parameters.

The embodiment of the invention discloses a light emitter, a wavelength alignment method, and a passive optical network system. The light emitter achieves the monitoring of optical power in a TO through the arrangement of 10GDML, MPD1, MPD2, a collimating lens and a narrow band optical filter, carries out the monitoring of the optical power through the MPD1 and MPD 2, and outputting the monitored optical power to be outputted to a wave locking monitoring circuit through a TO pin. The change amount of the optical power monitored by the wave locking monitoring circuit and the change amount of a wave locking factor K0 are respectively compared with corresponding threshold values, and a comparison result is transmitted to the wave locking monitoring circuit, thereby enabling the wave locking monitoring circuit to adjust the TEC temperature for wavelength alignment through the TO pin according to the comparison result. The above wavelength monitoring loop is used for the wave locking control of the 10GDML wavelength and a filter, achieves low cost and power consumption, and reduces a high modulation rate of chirps.

The invention provides a terahertz modulator adopting a graphene metal composite structure. The terahertz modulator consists of a substrate, a metal structure layer, an insulating dielectric layer, a graphene film layer and an electrode. The terahertz modulator applies voltage between the metal structure layer and the electrode to change the chemical potential of graphene, so as to modulate terahertz wave energy penetrating through a device; in addition, through the resonant interaction of the metal structure layer in a specific terahertz wave band, the modulation depth of the device in the resonant wave band is improved. According to the terahertz modulator, the high electron mobility property of the graphene and the resonant property of the metal structure are combined to obtain the terahertz modulator with high speed and large modulation depth, and the terahertz modulator can be widely applied to the fields of terahertz communication, terahertz detection, terahertz imaging and the like.

The invention discloses a low-frequency mechanical antenna based on electromechanical coupling and a signal processing method, and mainly solves the problems of poor stability and low modulation efficiency of a traditional mechanical antenna system in the prior art. According to the technical scheme, the method comprises the following steps: the spherical permanent magnet is fixed by the cylindrical fixing sleeve sleeved with the motor spindle in the same diameter through the high-speed bearing, so that the operation stability is ensured; a high-speed servo motor is used for driving a spherical permanent magnet to rotate and radiating same-frequency electromagnetic waves outwards; the spherical permanent magnet is arranged in a magnetic shielding case of a signal loader, amplitude modulation information on a low-frequency magnetic field is loaded by changing the magnetic conductivity of a shielding case, a modulation signal is filtered and amplified by the signal collector, and then synchronization and demodulation are realized in the signal processor. According to the invention, the stability of a mechanical antenna rotation system is improved, a coding and modulation method adapting to a mechanical antenna modulation signal is provided, the signal processing efficiency of the antenna is effectively improved, engineering realization in information transmission application is facilitated, and the method can be used for a low-frequency wireless communication system.

Disclosed a method for one time extension forming the semiconductor laser and mode spot switch comprises following steps: (1), on the N type indium phosphide substrate, extending growing the N type indium phosphide breaker, a lower waveguide layer, a 2.4 ª–m indium phosphide space layer, a lower light-limited layer of active region, a compression strain quanta active region, a upper light-limited layer, a P type indium phosphide envelope, and a high doping P type indium gallium arsenide ohmic electrode contract layer; (2), utilizing the wet corrosion process to etch the upper carinate shape of laser and mode spot switch; (3) utilizing the auto-alignment process to etch the lower carinate shape; (4), growing the SiO2 insulating layer and opening a electrode window; (5) decreasing the substrate of extended plate to 100 ª–m, and manufacturing P / N electrodes to be scribed into the tube core of 250í‡600ª–m.

The invention provides a graphene electro-optical modulator and a preparation method thereof. The graphene electro-optical modulator is in a plate capacitor structure and comprises an optical substrate, a bottom graphene layer, an insulating layer and a top graphene layer, and the optical substrate, the bottom graphene layer, the insulating layer and the top graphene layer are arranged sequentially from bottom to top. The top graphene layer and the bottom graphene layer are in mutual insulation through the insulating layer, the top graphene layer is above the bottom graphene layer, and an external modulation voltage is applied to the bottom graphene layer and the top graphene layer. The graphene electro-optical modulator is an active Q modulation device independent of a waveguide structure on the basis of a graphene electro-optical modulation technology; modulation depth is changed by amplitude variation of the external periodic voltage, and light modulation depth requirements of different laser parameters can be met; after the graphene electro-optical modulator is inserted into a laser, high-pulse-energy controllable-repetition-rate pulse laser output can be achieved. Therefore, the graphene electro-optical modulator has a promising market prospect.

A modular node for an optical communication network includes one or more transceiver modules of a plurality of transceiver modules, and a node core including a plurality of electrical connectors to electrically join up to the plurality of transceiver modules to the node core. At least some of the transceiver modules has an optical transceiver configured to emit optical beams carrying data and without artificial confinement, and detect optical beams emitted and without artificial confinement. The up to the plurality of transceiver modules electrically joined to the node core are spatially separated to provide configurable coverage for optical communication based on their number and placement. And the node core further includes switching circuitry configured to connect the one or more transceiver modules to implement a redistribution point or a communication endpoint in the optical communication network.

The invention relates to an integration method of electric adsorption modulation laser and mode speckle converter, which comprises: growing n-type indium phosphate buffer layer on the substrate; corroding the upper 1.1Q layer on the chip, to grow buffer layer; growing silica dioxide protective layer on the whole chip, and corroding the silica dioxide protective layer at two ends of mode speckle converter; pouring low-energy phosphate ion; growing the silica dioxide protective layer again; heating, keeping warm, anneal on the chip; corroding silica dioxide protective layer; using relative light etching plate to mask the laser and modulator, to form the upper ridge and lower ridge on the converter; growing p-type indium phosphate and indium gallium arsenic phosphate etching stop layer; etching ridge pilot structure; depositing medlin at two sides of laser and modulator; opening the electrode windows of laser and modulator; etching the electrode images on the laser and modulator to splash the P electrode and remove the P electrode; extending the substrate, and splashing n electrode; slicing the sample to form tubular chip.

The present invention relates to the field of optical module, and provides a high-speed optical module for an optical fiber channel. The optical module can be used for 16G optical fiber channel, and comprises parts for emitting, receiving, clock data recovery and controlling. The optical module can be downward compatible with the application of 8G optical fiber channel and 4G optical fiber channel, support the diagnostic tests on optical circuit loopback and electrical circuit loopback, and provide stable receiving alarming. The optical module of the present invention, when serving as the interface between optical fiber channel systems and the interface between optical storage network storage devices, has the characteristics of miniaturization and low power consumption, and can improve port application density; the module supports hot swapping, which facilities the field debugging of the system, and can realize the replacing of the optical module without power down; and the module supports a digital diagnostic interface, and the network administrator can monitor the working state of the optical module by using the communication interface.

The invention discloses a Schottky gate array type terahertz modulator and a regulation and control method thereof. A periodic gate type metal-semiconductor surface plasmon waveguide structure is adopted, the characteristics of Schottky contact formed by a metal-semiconductor interface and superposition of the Schottky contact and terahertz surface plasmon polariton position are utilized, a positive electrode and a negative electrode are led in and voltage is exerted, so that the terahertz modulation function of the Schottky gate array type terahertz modulator is achieved. The Schottky gate array type terahertz modulator combines a waveguide optical microstructure with a semiconductor electron device together, so that the Schottky gate array type terahertz modulator is well integrated with other electronic components and systems, and the optical functions of terahertz wave transmission and resonance oscillation are achieved. The Schottky gate array type terahertz modulator works from 2.2THz to 3.2THz, the working frequency can be tuned along with the working voltage, the maximum modulation depth is 16dB, and the highest modulation rate is 22MHz. The Schottky gate array type terahertz modulator is an on-chip electronically-controlled high-speed terahertz modulator which is in a small type and can be integrated, and the application requirements for terahertz broadband wireless communications are met.

The invention discloses a graphene absorption-type electro-optic modulator based on a D-type superfine optical fiber. The graphene absorption-type electro-optic modulator based on the D-type superfine optical fiber comprises a base layer, the two sides of the upper end of the base layer are provided with a first supporting column and a second supporting column respectively, and a first graphene layer, an insulating layer and a second graphene layer are sequentially arranged at the upper end of the first supporting column and the upper end of the second supporting column; the electro-optic modulator further comprises a first electrode, a second electrode and the D-type superfine optical fibers, the first electrode is located on the outer side above the first supporting column and directly connected with the first graphene layer, the second electrode is located on the outer side above the second supporting column and directly connected with the second graphene layer, and the polishing surface of the D-type superfine optical fiber is attached to the middle of the upper surface of the second graphene layer. According to the graphene absorption-type electro-optic modulator based on the D-type superfine optical fiber, the D-type polished superfine optical fiber is utilized to serve as a modulation area, sufficient interaction can be achieved between graphene and light, and therefore effective optical-wave modulation can be achieved through smaller device size; the electro-optic modulator has the advantages of being high in modulation speed, low in power consumption, simple in preparation technology and easy to achieve.

A closed loop power converter circuit of a UPS or other power supply includes a pulse width modulator circuit in a forward path of the closed loop power circuit. A compensation circuit provides pulse width commands to the pulse width modulator at a first rate. A feedback circuit digitally filters samples of an output of the closed loop power converter at a second rate greater the first rate and that provides the filtered samples to the compensation circuit. In some embodiments, the compensation circuit may be operative to compensate for the phase lag associated with a low pass output filter.

The invention provides a micro-ring electro-optical modulator based on a lithium niobate single crystal thin film, a use method and application. The micro-ring electro-optical modulator comprises thelithium niobate single crystal thin film and electrodes; the lithium niobate single crystal thin film comprises a micro-ring structure and an optical waveguide; the micro-ring structure and the optical waveguide are both arranged on the side, provided with lithium niobate, of the lithium niobate single crystal thin film; and the electrodes are respectively arranged on the inner side of the micro-ring structure and the outer side of the micro-ring structure. According to the micro-ring electro-optical modulator based on the lithium niobate single crystal thin film of the invention, the micro-ring structure is adopted, and therefore, the length of an electro-optic effect is increased, the driving voltage of the modulator is reduced, the power consumption of the device is reduced, and the receiving sensitivity of a radio frequency front end can be improved.

An optical signal is produced from a direct modulation resonant cavity device, such as directly-modulated diode laser having an electrode divided into multiple sections. Each section is driven with an electrical waveform such that a time delay is introduced between sections so as to ensure that the different sections reach their peaks at slightly different times.

The invention discloses an optical signal transmission method and system used for an indoor wireless network, and relates to the field of optical fiber communication. The method includes following steps: a downlink optical signal transmission process: an optical signal transmitting terminal splits externally transmitted optical signals, performs beam expanding on the split optical signals, performs phase modulation on the optical signals according to a preset downloading wavelength and issues the modulated optical signals to user terminals; and an uplink optical signal transmission process: the optical signal transmitting terminal performs phase modulation on optical signals uploaded by the user terminals, focuses the optical signals after phase modulation, and couples the optical signalsto the external. According to the method and system, a wireless communication device is not adopted, direct transmission of the optical signals with non-changeable wavelength can be realized, the security performance of transmission of the optical signals is enhanced, and an optical fiber network is directly applied to the indoor wireless network.

The invention discloses a silicon-based high-speed dual-carrier double-polarization modulator integrated chip. The integrated chip comprises two single-mode vertical coupling gratings, two modulation modules, one 2 * 1 multimode interference coupler and one dual-mode vertical coupling grating. The silicon-based high-speed dual-carrier double-polarization modulator integrated chip can work in a dual-wavelength double-polarization state, and can combine polarization multiplexing with wavelength division multiplexing to achieve complex format modulation and improve the data modulation rate. The silicon-based high-speed dual-carrier double-polarization modulator integrated chip can realize double-polarization hexadecimal quadrature amplitude modulation so as to satisfy the high-order format modulation required by the next generation optical communication system, and the modulation rate can reach and even exceed 400 Gbit / s.

The invention discloses a non-volatile tunable directional coupler based on a phase change material. The coupler comprises an SOI substrate, the SOI substrate is provided with a parallelly distributedinput silicon waveguide and an output silicon waveguide in a horizontal direction, the coupler is characterized in that the upper surface of an output silicon waveguide is provided with a phase change material GST waveguide layer in the length direction, the GST waveguide layer is located in the coupling region and is uniformly divided into N segments, each segment can work in a crystalline or amorphous state, the N is any natural number within 3-20, the coupler achieves any ratio of power coupling by changing the number of segments of the GST waveguide layer in crystalline and amorphous state, and the coupler has the advantages of on-chip integration, low energy consumption, wide operating bandwidth, low insertion loss and the tunable output power.

The invention discloses an all-optical modulation device based on a micro-nano GaAs optical waveguide. The all-optical modulation device comprises a laser light source, an optical fiber coupler, micro-nano GaAs optical waveguide and a filter, wherein the laser light source, the optical fiber coupler, the micro-nano GaAs optical waveguide and the filter are sequentially connected with one another through optical fibers. All-optical modulation signals realized by applying the all-optical modulation device has higher modulation depth and extinction ratio, the modulation rate reaches as high as dozens of Gb / s, and important performance parameters of modulated signals such as modulation depth and extinction ratio can be flexibly controlled by a pump light intensity adjusting method, a pump light-probe beam frequency detuning method and other methods. The all-optical modulation technology realized by the invention can be used in an integrated optoelectronic technology for effectively reducing the module scale of an optical modulator and improving the modulation rate and the modulation depth.