9results about How to "High modulation rate" patented technology

The invention relates to a signal emission control method and device based on optical communication and a signal emission laser. The method comprises the following steps: acquiring output light intensity data of the vertical cavity surface emitting laser in a preset temperature range and a bias current range, and determining a bistable working characteristic curve; acquiring a vibration resonance gain signal; gaussian distribution transformation and target phase sampling are performed on the vibration resonance gain signal, and a signal nonlinear compensation model is established; applying a driving current pulse synchronous with communication data, symmetrically sampling the output signal subjected to transient response control at a rising edge and a falling edge, and constructing a signal quality evaluation vector; and inputting a support vector regression model, establishing a mapping relation between the light intensity characteristic parameter and the driving control parameter, and generating a real-time control signal of the laser. According to the invention, the self-adaptive accurate control of the vertical cavity surface emitting laser is realized, and the stable operation of the signal emitting laser under the temperature and bias current fluctuation condition is ensured.

The invention discloses a wavelength locking system of a silicon oxide micro-ring resonator, which comprises a photoelectric conversion module, a feedback control module, a radio frequency driving module, an interdigital transducer, a zinc oxide film, a phase-locked amplification module, two analog-to-digital conversion modules and a digital-to-analog conversion module, the zinc oxide film generates mechanical vibration to form surface acoustic waves which are transmitted to the vicinity of the silicon oxide micro-ring resonator, mechanical stress and strain are triggered, the refractive index distribution of the silicon oxide micro-ring resonator is changed, and the frequency, phase and intensity of an internal optical signal are modulated. The feedback control module feeds back and adjusts the thermal power of the micro-ring heater based on voltage signals output by the phase-locked amplification module and the photoelectric conversion module, and adjusts the resonant wavelength of the silicon oxide micro-ring resonator, so that the wavelength of an optical signal output by the silicon oxide micro-ring resonator is locked at a target wavelength; the method has the advantages that accurate wavelength locking can be carried out on the silicon oxide micro-ring resonator, and the wavelength locking effect is good.

The application provides a radio frequency source circuit and a laser frequency shift lock cavity signal generation method, which can be applied to the field of cold atom optical lattice clock technology. The radio frequency source circuit comprises a control sub-circuit, a phase-locked loop sub-circuit and an output power control sub-circuit. The control sub-circuit is used for receiving a digital control instruction from an upper computer and taking a synchronous clock as a working clock, performing amplitude-phase conversion and phase waveform conversion in parallel based on preset modulation data carried by the digital control instruction, and outputting a phase control word and a phase demodulation signal. The phase-locked loop sub-circuit is used for frequency multiplication of a reference clock and outputting a clock signal suitable for the working frequency of a frequency synthesizer as the working reference clock of the frequency synthesizer. The frequency synthesizer is used for taking the working reference clock as a frequency reference, realizing phase synchronization by combining the synchronous clock, and adjusting the phase of an output signal based on the phase control word. The output power control sub-circuit is used for adjusting the power of the output signal of the frequency synthesizer based on preset power modulation data to output a laser frequency shift lock cavity signal.

The present invention provides a light intensity modulation method based on a Sagnac interference structure, which relates to the technical field of quantum information and optical fiber communication. The method comprises: determining a predetermined distance between a phase modulator and a center position of a Sagnac modulation ring according to a target modulation condition, so that a reverse pulse of the th period and a positive pulse of the th period enter the phase modulator at the same time, and a reverse pulse of the th period and a positive pulse of the th period enter the phase modulator at the same time; determining waveform parameters of an electrical signal according to a predetermined modulation rate and a predetermined modulation period; determining parameters of a phase modulator according to a predetermined modulation rate threshold; determining a first duration according to a target modulation form; and realizing light intensity modulation of a light pulse by a Sagnac interference structure according to the waveform parameters of the electrical signal, the parameters of the phase modulator and the first duration.

The invention provides a directly modulated laser, which comprises a substrate, an epitaxial layer, a buffer layer, a grating layer, a lower limiting layer, an active layer, an upper limiting layer, a corrosion cut-off layer, a cladding and a contact layer, the structure of the grating layer is a convex grating structure with a lambda / 8 phase shift, the grating layer is located on the N-type doped side, and the convex grating structure with the lambda / 8 phase shift is used for reducing the photon density at the phase shift position through the negative reflector loss feedback effect and limiting hole gathering on the P-type doped side through the characteristic that the electron mobility is larger than the hole mobility.

The application provides a high-speed, high-efficiency and low-cost semiconductor optical communication device and a preparation method thereof. The high-speed, high-efficiency and low-cost semiconductor optical communication device comprises a first Bragg reflector, first to Nth active layers arranged in sequence along a first direction on one side of the first Bragg reflector, wherein N is an integer greater than or equal to 2; first to N-1th tunnel junctions, wherein any nth-1th tunnel junction is located between an nth-1th active layer and an nth active layer, n is an integer greater than or equal to 2 and less than or equal to N; first to N-1th current limiting layers arranged along the first direction, wherein any nth-1th current limiting layer is located on the side of the nth-1th tunnel junction along a second direction, and the nth-1th current limiting layer has an overlapping projection on the sidewall of the nth-1th tunnel junction along the second direction; and wherein the second direction is perpendicular to the first direction.

The invention discloses a silicon optical device structure and an implementation method. The silicon optical device structure comprises a dielectric layer and a semiconductor layer which are sequentially arranged on a substrate, the semiconductor layer is provided with an active area, the semiconductor layer in the active area forms a semiconductor pattern, the surface of the semiconductor pattern is provided with a light source window penetrating to the surface of the dielectric layer, and a quantum dot light source is arranged in the light source window. According to the invention, the preparation process of the quantum dot light source is integrated into the shallow trench isolation process in the silicon light process flow, so that a new mode of integrating the silicon light device of the silicon quantum dot light source by using the silicon light process is realized.

The laser chip fabrication method and laser chip disclosed herein include a light-emitting region and an electro-absorption modulation region. The P-InP layer includes a first region, a second region, and a third region, with a second active region located below the third region. The first and second regions are exposed to the implanted ion beam, forming a first and a second electrically isolated region. The third region, protected by a mask, remains conductive, forming a first P-InP body layer. During ion implantation, the first and second metal layers act as masks for the first P-InP body layer, intercepting ion implantation and preventing ions from penetrating deep into the first P-InP body layer, thus maintaining its conductivity. The narrow linewidths of the first and second metal layers reduce the ion implantation width of the first P-InP body layer, resulting in a narrower linewidth first P-InP body layer, which is beneficial for improving the modulation rate and modulation bandwidth of the electro-absorption modulation region.

This invention provides a thermo-optical phase shifter array and its formation method, comprising: forming multiple waveguides, wherein the multiple waveguides have the same length in a first direction and the same width in a second direction, and the first and second directions are perpendicular to each other; forming electrodes on the surface of each waveguide, wherein the area of ​​the multiple electrodes on the plane formed by the first and second directions gradually increases along the second direction; forming a dielectric layer on the surface of each electrode, the dielectric layer filling the gaps between adjacent electrodes and adjacent waveguides; forming isolation trenches in the dielectric layer and buried oxide layer on both sides of each waveguide along the second direction and in the underlying silicon layer below each waveguide, wherein the waveguides and the buried oxide layer below the waveguides are suspended on the isolation trenches, and the area of ​​the multiple isolation trenches located below the waveguides on the plane formed by the first and second directions gradually decreases along the second direction. This invention achieves a balance between modulation rate and modulation efficiency while satisfying the phase shift requirement.