The invention belongs to the technical field of
optical communication, and particularly relates to a narrow linewidth
laser based on a cascaded micro-ring
resonant cavity. The
laser comprises a
semiconductor laser inner cavity module, a
gain chip module, a phase shifter, a
cascade micro-ring
resonant cavity module, a thermal tuning module and an outer cavity reflector. The
gain chip is combined with an III-V group material at the top of the
silicon waveguide through heterogeneous integration, and adopts an InAlGaAs
quantum well to provide high
gain; the phase shifter is used for matching the
lasing wavelength with the resonant
wavelength; the cascaded micro-ring
resonant cavity is formed by cascading three micro-rings, and tuning of the laser is realized based on a
vernier effect; the thermal tuning module is composed of three semi-annular
metal strips and a straight
waveguide-shaped
metal strip. The outer cavity reflector module adopts a Sagnac ring structure; the laser inner cavity, the gain
chip, the
cascade micro-ring resonant cavity and the outer cavity reflector are directly connected through
silicon waveguides. The laser has the characteristics of narrow linewidth and wide tuning range, is easy to highly integrate and interconnect, and has important application value.