Adjustable interleaver based on silicon-substrate Michelson GT interferometer

A technology of interleaver and interferometer, which is applied in the field of adjustable interleaver, can solve the problems such as failure to realize square filter spectrum, and achieve the effect of small overall size, high channel isolation and high adjustment efficiency

Inactive Publication Date: 2016-06-22
SHANGHAI JIAO TONG UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

But this technique fails to achieve a square filter spectrum

Method used

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  • Adjustable interleaver based on silicon-substrate Michelson GT interferometer
  • Adjustable interleaver based on silicon-substrate Michelson GT interferometer
  • Adjustable interleaver based on silicon-substrate Michelson GT interferometer

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Embodiment 1

[0028] Such as figure 1 As shown, this embodiment can be realized on an SOI platform, including: a first directional coupler 3 and a first resonant cavity unit 1 and a second resonant cavity unit 2 cascaded to one side thereof, wherein: the first directional coupler 3 The first port of the coupler 3 is provided with a first waveguide 4 directly connected to the input end of the first resonant cavity unit 1, and the second port of the first directional coupler 3 is provided with a waveguide 4 connected to the input end of the second resonant cavity unit 2. The first phase shifter 5, the other side of the first directional coupler 3 is provided with two ports, which are respectively an input port I and a transmission output port T, and the input port I is also used as a reflection output port R;

[0029] The first resonator unit 1 includes a first Sagnac loop mirror 11, a second phase shifter 6 and a third Sagnac loop mirror 13 connected in series in sequence, and the second res...

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Abstract

An adjustable interleaver based on silicon-substrate Michelson GT interferometer including a first directional coupler, a first resonance cavity unit and a second resonance cavity unit, wherein the length of each of the first resonance cavity unit and the second resonance cavity unit is equal to that of a resonance cavity in cascade connection with one side of the first directional coupler. A first port of the first directional coupler is provided with a first wave guide directly connected with the input terminal of the first resonance cavity unit. A second port of the first directional coupler is provided with a first phase shifter connected with the input terminal of the second resonance cavity. The first resonance cavity unit includes a first Sagnac loop mirror, a second phase shifter and a third Sagnac loop mirror connected in series. The second resonance cavity unit includes a second Sagnac loop mirror, a second phase shifter and a third Sagnac loop mirror connected in series. The ratio between the length difference Delta L of two arms of the first directional coupler and the length d of the resonance cavities is constant and can be in proportional control. According to the invention, adjustment of the central wavelength of a square filter wave spectrum of the interleaver is realized through the Sagnac loop mirrors. The device is small in integral size and high in adjustment efficiency.

Description

technical field [0001] The invention relates to a technology in the field of optical fiber communication, in particular to an adjustable interleaver based on a silicon-based Michelson GT (Gires-Tournois) interferometer. Background technique [0002] WDM optical networks increase network capacity by simultaneously transmitting data on multiple wavelength channels. In order to achieve channel selection and noise suppression in wavelength division multiplexing optical networks, it is necessary to design optical devices for filtering multi-wavelength optical signals, and an important type of optical filtering device is an interleaver. The interleaver is an optical device that outputs the odd and even channels of one signal to two ports respectively, which can double the channel spacing. Silicon-based photonic devices have the characteristics of strong mode field confinement and are compatible with complementary metal-oxide-semiconductor CMOS processes, making them ideal for int...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/293
CPCG02B6/29347G02B6/2935G02B6/29355H04B10/506
Inventor 姜新红杨玉星刘博宇苏翼凯
Owner SHANGHAI JIAO TONG UNIV
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