174 results about "Micro ring resonator" patented technology

Methods of making optic structures (e.g., microring resonator, meta-elements) include imprinting a first surface of a moldable polymer having at least one inverse micro / nano-feature into a second surface of a first polymeric cladding layer disposed on a second substrate to form at least one trench micro / nano-feature contrapositive to the at least one inverse micro / nano-feature. A liquid polymeric precursor is applied into the at least one trench micro / nano-feature where it is solidified to form a solid polymer. A difference between a first refractive index of the first cladding layer and a second refractive index of the solid polymer is ≥about 0.05. The solid is heated for thermal reflow to define a meniscus followed by applying a second polymeric cladding layer thereon. Organic cladded (e.g., microring resonator) optic structures are also provided, which may have a quality (Q)-factor of ≥about 5×105 around 770 nm wavelength).

The invention relates to a micro-ring resonator based on a multi-circle square structure, the micro-ring resonator comprises a coupling waveguide and a multi-circle square micro-ring resonant cavity, the coupling waveguide comprises an S-bend waveguide, an input waveguide and an output waveguide which are all single-mode waveguides, and the multi-circle square micro-ring resonant cavity comprises a crossed waveguide chain and a multi-mode waveguide section connected with the crossed waveguide chain. The multi-mode waveguide section comprises a multi-mode straight waveguide and a 90-degree multi-mode Euler bending waveguide. By introducing the multi-mode waveguide, the energy distribution of the guided mode on the side wall is reduced, and the transmission loss of the micro-ring resonant cavity is reduced. Through the arrangement of the multi-circle square micro-ring resonant cavity, the length of the micro-ring is increased within a limited size, and the Q value of the multi-circle square micro-ring resonant cavity is improved. By means of the 90-degree multimode Euler bending waveguide, compact 90-degree turning is achieved, generation of a high-order mode is restrained, and meanwhile the micro-ring surrounding area is increased. Therefore, a solution can be provided for the high-performance sensing unit for the integrated micro-ring sensor.

The invention belongs to the field of reconfigurable on-chip spectrometers, and particularly discloses a reconfigurable on-chip spectrometer based on a low-loss GST superlattice phase change material. According to the invention, the GST-SL2 material is combined with the double-cascade micro-ring array architecture, so that the performance of the device is improved in a breakthrough manner, a large amount of spectral response can be generated only through a limited number of micro-ring resonators on a chip, the flexible regulation and control of the spectral resolution and the working bandwidth are supported, and the customization requirements of different application scenes are met; a resolution regulation and control array is formed by cascading # imgabs0 first MRRs which are arranged at equal intervals in the extension direction of a bus waveguide, the lengths of resonance micro-rings of the first MRRs are increased progressively, and due to the cascading design, through the synergistic effect of the multiple MRRs, the overall regulation and control capacity is remarkably enhanced, and it is ensured that sampling points can uniformly cover the whole working bandwidth of an on-chip spectrometer; the measurement bandwidth regulation and control array divides the working bandwidth into a plurality of channels, the irrelevance of a system response function is successfully enhanced, and a reliable basis is provided for spectrum reconstruction.

Provided are a silicon-based tunable filter, laser and an optical module. The tunable laser comprises a semiconductor optical amplifier and a silicon photonic integrated chip, wherein a first coupler, a phase regulator and a tunable filter are provided on the silicon photonic integrated chip; the tunable filter comprises a flat-top band-pass filter structure, a Mach-Zehnder interferometry (MZI) structure and a micro ring resonation (MRR) structure, which are cascaded; gain light emitted by the semiconductor optical amplifier is coupled to the silicon photonic integrated chip by means of the first coupler, and a narrowband filtered optical signal is output by means of the tunable filter; and the phase of the gain light is regulated by means of the phase regulator so as to output single-peak narrowband laser light with a tunable target wavelength.

This document describes an electro-optic photonic memory device comprising a micro-ring resonator, and at least one ferroelectric field effect transistor (FeFET) that is disposed along a partial circumference of a raised ring waveguide of the micro-ring resonator. The FeFET comprises a ferroelectric gate stack and a heterojunction channel layer.

The invention discloses a device for narrowing the line width of a laser and expanding the tuning range. The device comprises a laser used for generating single-mode signal light for communication; the input end of the spot size converter is connected with the output end of the laser, and the spot size converter is used for matching the mode field of the laser with the mode field of the output waveguide; the input end of the 1 * N splitter is connected with the output end of the spot size converter, and the 1 * N splitter is used for distributing the optical signals to the N paths of output waveguides; the first phase shifter is deposited on the connecting waveguide between the output end of the spot size converter and the input end of the 1 * N splitter; and N runway type micro-ring resonators, each runway type micro-ring resonator is coupled with one path of output waveguide, and the N runway type micro-ring resonators and the N paths of output waveguides form an equivalent parallel coupling structure. The problem that in the prior art, in order to give consideration to the narrow linewidth and the wide tunable range of the laser, a scheme with high structural complexity and complex production process requirements is adopted, and consequently the cost is too high is solved.

Techniques for programmable microring resonators are disclosed. In an illustrative embodiment, microring resonator is coupled to a waveguide. Due to process variations, the coupling rate between the microring resonator and the waveguide can vary. In order to tune the coupling regime between the microring resonator and the waveguide, a diode that forms part of the microring resonator can be forward biased, increasing the free carrier density and absorbing some of the light in the microring resonator. The forward biased diode can be used for various applications, such as to control the quality factor of the microring resonator, control a chirp on the light, and / or impart a blueshift to the microresonator.

A process variation tolerant microring resonator is designed based on fabrication process variation (FPV) map data that includes one or more FPV maps that indicate a process variation in a substrate. Waveguide parameter data are estimated from the FPV map, where the waveguide parameter data include estimated waveguide parameters as they are affected by process variations. Microring resonator parameter data are generated from the FPV map data and waveguide parameter data. The microring resonator parameter data includes estimated microring resonator parameters as they are affected by process variations. The waveguide parameter data and microring resonator parameter data can be output as a design for a process variation tolerant microring resonator, which can be further optimized based on user feedback or other constraints.

The lithium niobate-silicon nitride waveguide structure comprises a silicon substrate layer, a first silicon oxide isolation layer, a second silicon oxide isolation layer, a lithium niobate thin film layer and a silicon oxide dielectric layer which are stacked in sequence, the second silicon oxide isolation layer is wrapped with a silicon nitride layer; the thickness of the second silicon oxide isolation layer between the silicon nitride layer and the lithium niobate thin film layer is 50 + / -10nm; the thickness of the silicon nitride layer is 400 + / -10nm, and the thickness of the lithium niobate film layer is 600 + / -50nm; the silicon oxide dielectric layer is provided with at least two electrodes which are arranged at intervals. According to the lithium niobate-silicon nitride waveguide structure, the preparation method and the optical gyroscope provided by the invention, on the basis of the advantages of silicon nitride and lithium niobate materials, an ultra-low-loss silicon nitride waveguide, an ultra-high-Q-value micro-ring resonator and a high-modulation-rate lithium niobate modulator are obtained at the same time through a lithium niobate and silicon nitride hybrid integration method; and thus, the overall performance of the resonant integrated optical gyroscope is improved.

The invention relates to the technical field of laser devices, in particular to a Brillouin semiconductor laser device which comprises a gain chip, a Brillouin semiconductor laser device and a Brillouin semiconductor laser device, a Bragg grating; a microring resonator; the beam splitter is located between the micro-ring resonator and the Bragg grating; wherein the gain chip is used for generating spontaneous radiation light, the Bragg grating and the high-reflection film form a resonant cavity, the spontaneous radiation light is processed by the resonant cavity to form pump light, the pump light is injected into the micro-ring resonator through a second end of the Bragg grating, the micro-ring resonator generates a stimulated Brillouin scattering effect to generate Stokes light, and the Stokes light is transmitted to the high-reflection film. The micro-ring resonator carries out mode selection amplification on the Stokes light, ultra-narrow linewidth Brillouin laser is output from the first end of the micro-ring resonator, and the beam splitter outputs the ultra-narrow linewidth Brillouin laser according to a preset proportion. According to the Brillouin semiconductor laser, the integration level and the compactness of the Brillouin semiconductor laser are improved while it is guaranteed that the Brillouin semiconductor laser has excellent performance.

An electro-optical semiconductor chip includes a ring-shaped optical waveguide and a bus optical waveguide extending past the ring-shaped optical waveguide, such that an optical coupling region exists therebetween. A doped-silicon non-silicided region is disposed outside of the ring-shaped optical waveguide and within thermal communication with the ring-shaped optical waveguide. An inner contact region is formed of silicided silicon along an inner side of the doped-silicon non-silicided region. An outer contact region is formed of silicided silicon along an outer side of the doped-silicon non-silicided region. A first plurality of electrical contacts electrically contact the inner contact region. A second plurality of electrical contacts electrically contact the outer contact region. A voltage differential between the first and second pluralities of electrical contacts controls an electrical current flow through the doped-silicon non-silicided region to control a temperature of at least a portion of the ring-shaped optical waveguide.

The invention provides a high-efficiency micro-ring acousto-optic modulator, which combines high sensitivity and sound wave regulation and control capability of a micro-ring resonator, adopts two pairs of optical waveguides and acoustic waveguides with grating couplers, realizes flexible control of sound wave and light wave propagation directions, can be configured to perform common or reverse propagation, and can be used for acoustic wave and light wave propagation. The method is suitable for exploring the time reversal symmetry and the optical nonreciprocity of the system. The device adopts the sapphire substrate, by virtue of high mechanical strength, high sound velocity and low acoustic loss, the sound wave mode quality and transmission stability are improved, and meanwhile, high-quality integration with silicon dioxide and lithium niobate films is ensured; the silicon substrate has remarkable advantages in the aspects of micro-nano processing, heat conductivity and electro-optical system compatibility, and large-scale manufacturing and system integration are facilitated. In addition, a chalcogenide waveguide with low optical loss is introduced into the device, so that the light field constraint and locality are enhanced, the overlapping and coupling strength of an acousto-optic mode is improved, and meanwhile, the interface scattering loss is reduced.

There is provided an external cavity laser, including: a photonic integrated platform including a gain chip providing a gain medium and at least one reflector chip, the photonic integrated platform including first and second functional layers made of different materials; a resonant cavity optically coupled to the gain medium and including a first and a second micro-ring resonators (MRR) in a Vernier configuration, the first MRR and second MRR extending within respective ones of the first and second functional layers made of different materials and having corresponding group indices, the first and second MRRs having different radii selected in view of said corresponding group indices; and a tuning mechanism for tuning a spectral response of at least one of the first and second MRR.

The invention relates to the field of semiconductor lasers, in particular to a high-power narrow-linewidth hybrid integrated laser, which comprises a wide waveguide laser gain chip and a silicon-based external cavity photon chip, and is characterized in that the silicon-based external cavity photon chip comprises a tip multi-section edge coupler, a bus waveguide, at least three cascaded micro-ring resonators and a feedback assembly; the tip multi-section edge coupler comprises a tip waveguide array and a conical combined waveguide, the tip waveguide array is composed of inverted conical waveguides arranged side by side, and the width of the input end face of each inverted conical waveguide is smaller than that of the output end face of each inverted conical waveguide; and the width of the conical combined waveguide is gradually reduced from the input end to the output end. The invention solves the industrial problem that high power and narrow linewidth are difficult to consider in the hybrid integrated laser, has the advantages of high output power, extremely narrow linewidth, wide tuning range, high coupling efficiency, good process tolerance, high integration level and the like, and provides a high-performance light source for the next generation of coherent optical communication, laser radar and precision measurement system.

Embodiments disclosed herein include an on-cavity photonic integrated circuit (OCPIC). In an embodiment, the OCPIC comprises a laser transmitter, that comprises a row with four bumps, and a micro-ring resonator (MRR) in the row between a first bump and a second bump of the four bumps. In an embodiment, a cavity is below the MRR, where a diameter of the cavity is substantially equal to a spacing between the first bump and the second bump.

The invention discloses an OAM vortex communication system device and method of a silicon-based photon integrated micro-ring resonator array, and belongs to the technical field of wireless communication of the Internet of Things. The system comprises a silicon-based photon integrated micro-ring resonator array, and ultra-compact OAM beam generation is realized through thermo-optical tuning; according to the lightweight channel compensation architecture, a dual-branch DNN model is combined with NV color center quantum sensing to realize phase noise real-time calibration; and dynamic regulation and control of a heterogeneous multi-user access mechanism and fusion AI drive. The method solves the problems of beam divergence, channel time-varying sensitivity and multi-user interference of a traditional OAM technology in an Internet of Things scene, the mode purity under the millimeter wave (28GHz) frequency band reaches 99% or above, and the method is suitable for intensive Internet of Things scenes such as industry 4.0, automatic driving and intelligent agriculture.

The invention belongs to the technical field of optical calculation, and particularly relates to an intensity-phase mixed silicon-based photon modulator. According to the hybrid silicon-based photon modulator, a PIN micro heater formed by ion implantation is integrated on two arms of a Mach-Zehnder interferometer or a micro-ring resonator, and a phase change material and a protective layer are deposited in a window above the micro heater; electric pulses are applied to metal electrodes at the two ends of the micro heater to drive local reversible crystalline and amorphous transformation of the phase change material, and phase modulation of passing optical signals is achieved; meanwhile, constant voltage signals are applied to the two ends of the PIN micro heater, and intensity modulation is generated on passing optical signals through the carrier absorption effect. The two modulation modes are mutually independent and do not interfere with each other, and two groups of independently variable weight values can be stored in the device. The hybrid silicon-based photon modulator can be used in a large photon neural network, high-speed and high-parallelism convolution operation is carried out, and the overall end-to-end insertion loss of a chip is reduced.

This invention discloses a wavelength locking system for a silicon oxide microring resonator, comprising a photoelectric conversion module, a feedback control module, a radio frequency drive module, an interdigital transducer, a zinc oxide film, a lock-in amplifier module, two analog-to-digital conversion modules, and a digital-to-analog conversion module. The radio frequency drive module generates an alternating electrical signal and applies it to the interdigital transducer, causing the zinc oxide film to vibrate mechanically and generate surface acoustic waves that propagate to the vicinity of the silicon oxide microring resonator, inducing mechanical stress and strain, changing the refractive index distribution of the silicon oxide microring resonator, and modulating the frequency, phase, and intensity of the internal optical signal. The feedback control module adjusts the thermal power of the microring heater based on the voltage signals output by the lock-in amplifier module and the photoelectric conversion module, thereby adjusting the resonant wavelength of the silicon oxide microring resonator and locking the wavelength of the optical signal output by the silicon oxide microring resonator to the target wavelength. The advantage is that it can accurately lock the wavelength of the silicon oxide microring resonator, resulting in a high wavelength locking effect.

The invention relates to the technical field of lasers, in particular to a Brillouin hybrid integrated laser, which comprises a gain chip; the Bragg grating is connected with the first cavity surface; the first end of the micro-ring resonator is connected with the second cavity surface; the beam splitter is located between the micro-ring resonator and the gain chip; wherein the gain chip is used for generating spontaneous radiation light, the Bragg grating and the low-reflection film form a resonant cavity, the spontaneous radiation light is processed by the resonant cavity to form pump light, the pump light is injected into the micro-ring resonator through the second cavity surface, the micro-ring resonator generates a stimulated Brillouin scattering effect to generate Stokes light, and the Stokes light is transmitted to the Bragg grating and the low-reflection film. The micro-ring resonator performs mode selection amplification on the Stokes light and outputs ultra-narrow linewidth Brillouin laser, and the beam splitter outputs the ultra-narrow linewidth Brillouin laser according to a preset proportion. According to the Brillouin hybrid integrated laser, the integration level and the compactness of the Brillouin hybrid integrated laser are improved while it is guaranteed that the Brillouin hybrid integrated laser has excellent performance.

The invention relates to the technical field of silicon light, particularly provides a resonator, and aims to solve the technical problem that a micro-ring resonator occupies a large area of a chip in the prior art. To this end, the resonator of the present application comprises: a substrate; the first dielectric layer is arranged on the substrate; the annular waveguide assembly is arranged on the first dielectric layer, every two annular waveguides form a group and are horizontally coupled, and all the annular waveguides are distributed in a one-by-one nesting mode; the coupling dielectric layer covers the annular waveguide assembly; the straight waveguide assemblies are arranged on the coupling dielectric layer, correspond to the annular waveguides and are vertically coupled with the annular waveguides, and every two straight waveguides form one group; and the second dielectric layer covers the straight waveguide assembly. According to the invention, the cascading function of the multi-stage annular waveguide can be realized in the occupied area of the annular waveguide with the maximum perimeter, the layout area is saved so as to improve the chip integration level, and the dependence on the precision of a high-end photoetching process can be reduced so as to reduce the cost.

The present application belongs to the technical field of photonic device design, and specifically relates to a micro-ring resonator reverse design optimization method based on deep learning. The present application comprises: obtaining different micro-ring resonator structure parameters and corresponding free spectral range and quality factor, and processing and dividing the data set; building a cascade neural network model, wherein the reverse network takes the target performance index as the input to predict the structure parameter, the forward network inputs the structure parameter and outputs the performance index, and is used to constrain and correct the reverse prediction result; after training, the test set is evaluated to measure the reverse effect by the average absolute percentage error index, the weight in the loss function is changed, and multiple rounds of training are performed to determine the optimal weight configuration and final model of the reverse design. The present application has the advantages of high calculation efficiency, excellent design precision and strong physical realizability, can reduce the dependence on large-scale simulation and multiple iteration optimization, effectively shorten the device design cycle, and has high application value.

The invention provides a high-resolution broadband integrated spectrometer based on thin film lead zirconate titanate and a preparation method, and relates to the technical field of integrated optics. The structure of the spectrometer comprises a substrate; the silicon dioxide lower cladding layer is arranged on the substrate; the lead zirconate titanate thin film waveguide layer is arranged on the silicon dioxide lower cladding, a plurality of micro-ring resonators and a plurality of array waveguide gratings are arranged in the lead zirconate titanate thin film waveguide layer, and each array waveguide grating is connected with each micro-ring resonator through a waveguide; the sectional periodic metal electrode arrangement system is arranged in each section of straight waveguide area in the micro-ring resonator; wherein the plurality of micro-ring resonators are configured with resonant wavelengths which are distributed in a staggered manner, and the interval between the adjacent resonant wavelengths is 1 / n of the interval between the array waveguide grating channels; the spectrometer is configured to change the local waveguide refractive index by using the residual polarization effect of the lead zirconate titanate thin film through a segmented polarization method so as to realize alignment of the resonant wavelength and the center of the array waveguide grating channel.

The application aims to provide a kind of micro-ring resonator-based activation function device manufacturing method, comprising the following steps: determining the standard nonlinear function to be fitted by optical device;Preparation of micro-ring resonator;Coupling ring PN junction and micro-ring;Set up auxiliary light source and output signal measurement equipment;Set up TIA transimpedance amplifier and bias unit.The application can realize the function of activation function by optical device, and it is relatively easy to combine with other optical elements that can realize the summation of neural unit weight, realize the complete function of single neuron, thereby improve the operation efficiency and operation accuracy of optical neural network.The device is small in size and easy to integrate, and the operation efficiency and operation accuracy of the optical neural network integrated by the neural unit integrated by the device can be significantly improved.

The invention discloses a low-chirp push-pull resonant cavity modulator with a pre-calibratable phase and a method. The two coupling annular waveguides serve as micro-ring resonators, are located between the two single-mode coupling straight waveguides, are arranged in parallel and are respectively coupled with the two single-mode coupling straight waveguides, the micro-ring resonators of the two coupling annular waveguides are not mutually coupled, and the metal electrode is composed of an electrode located in the ring and an electrode located outside the ring. The coupling annular waveguide is made of ferroelectric materials, regulation and pre-calibration of the light refractive index are achieved by controlling the domain direction of the ferroelectric materials, loading of the voltage of the micro-ring resonator is achieved, and the resonant wavelength of the micro-ring resonator is calibrated and adjusted. The low-chirp electro-optic intensity modulation device can be used for realizing low-chirp electro-optic intensity modulation, has an efficient pre-calibration function, has no drift problem after calibration, can keep stable, can repeatedly erase and set a calibrated working point, and has the advantages of simple structure, no need of direct current bias, convenience in design, convenience in expansion, large process tolerance and the like.

The invention belongs to the technical field of optical signal processing, and provides a matrix-vector multiplication unit based on micro-ring resonators and photosensitive silicon and an implementation method. Systems and method examples disclosed herein include, based on microring resonator structures, photosensitive silicon, and waveguides, completing optical signal screening by utilizing differences in resonant wavelengths of the microring resonators, and mapping weight information onto the transmissivity of the photosensitive silicon utilizing a characteristic that the transmissivity of the photosensitive silicon can vary by illumination intensity. The method has the function of realizing optical matrix-vector multiplication, is simple in structure and rapid in calculation, and meets the requirements of diversified application scenes.

The invention provides a tunable external cavity laser chip and a preparation method thereof, and relates to the technical field of lasers, the chip comprises a planar optical waveguide loop and a gain chip; a narrow-band transmission peak of a micro-ring resonator and an interference passband of a multi-channel interference module are preliminarily aligned through a phase shifter array and a first micro-ring phase shifter in a planar optical waveguide loop, and selection of a lasing working point is completed; and the common phase shifter and the second micro-ring phase shifter are used for cooperative driving, laser frequency sweeping is carried out on the basis of preliminary alignment, and accurate alignment of a narrow-band transmission peak and an external cavity longitudinal mode is maintained in the whole frequency sweeping process. Through cooperative driving of the common phase shifter and the micro-ring phase shifter, the sweep frequency bandwidth of the laser is increased, and frequent mode hopping of output laser in the tuning process is avoided; meanwhile, the periodic alignment reflection phenomenon in a reflection spectrum is avoided, the utilization rate of the gain interval of the semiconductor gain chip is greatly improved, and a larger tuning range is obtained under the condition that the quality of light beams is kept unchanged.

The application provides a bridging fault tolerance simulation device and control method of a photonic tensor core. The structure and method examples disclosed in the present application include a 2*2 matrix and 2*1 vector multiplication operation based on a micro-ring resonator structure, simulate a matrix multiplication vector operation process of a photonic tensor core, parallel two photonic tensor core structures, one of which is a normal working structure and the other is a fault tolerance structure, the two structures do not work at the same time, the working state of the two structures is switched through GST as an optical switch, whether a fault occurs is judged by comparing the output signal with the normal output signal, and fault tolerance measures are adopted if a fault occurs.

The invention discloses a control method for acquiring a narrow linewidth laser signal. The method comprises the following steps: transmitting output light of a laser to a runway type micro-ring resonator introduced with a fine adjustment structure through a spot size converter and a normally closed variable optical attenuator in sequence; feedback light generated by the runway type micro-ring resonator with the introduced fine adjustment structure is fed back to the laser through the normally-closed variable optical attenuator and the spot size converter in sequence; a random parallel gradient descent algorithm is adopted, the sampling voltage of the trans-impedance amplifier serves as a performance index, cooperative control is conducted on the first working voltage of the first phase shifter and the second working voltage of the second phase shifter integrated on the normally-closed variable optical attenuator, and a narrow linewidth laser signal is obtained. According to the invention, the problems of low efficiency and slow response speed during acquisition of narrow linewidth laser signals in the prior art are solved.

Covered cavity structure for Photonic integrated circuits (PICs) that include a micro-ring resonator (MRR) with a heater. Air cavities are etched or otherwise thinned into an overlaying oxide layer, a buried oxide layer, or an underlying silicon layer. Variations in size, shape, and location of the covered air cavity associated with an MRR provide customizable options for thermal management. A thin film across an upper surface covers the air cavity, providing a barrier to underfill in the air cavity and preventing interference of underfill with performance of silicon waveguides. When arrayed into a plurality of MRRs, the thin film can cover the plurality of MRRs.

The present invention proposes a method for calculating the double fault errors of a binary all-optical full adder. This fault error calculation involves the field of double fault simulation devices for logic calculation circuits composed of n microring resonators (MRRs), solving the problem of the lack of in-depth evaluation of double fault errors in existing logic calculation circuits composed of n MRRs. The method includes obtaining the correct output result of a fault-free model device and the erroneous output result of a double fault model device, and calculating the absolute error, maximum absolute error, mean absolute error, and mean square error between the correct output result and the erroneous output result. The embodiment of the present invention is used to calculate errors caused by double faults in the actual production and use of a logic calculation circuit composed of n MRRs. Specifically, it is implemented using a double fault simulation device for a binary all-optical full adder composed of three MRRs as an example.