Integrated circuit in the form of an analog
convolution plane of a neural network or an analog
matrix multiplier, with at least one
resistor network (100) having at least two memory cells (200a, 200d) for storing a resistance characteristic value, each having a first contact pair (104a / 106a, 104a / 106b) connected to a source
electrode and a drain
electrode of a
transistor (201) designed as a field-effect
transistor, in which a ferroelectric
capacitance (203) is electrically connected in series between the front-gate
electrode of the
transistor (201) and the second contact (109) of the second contact pair, or of a transistor (201) designed as a ferroelectric field-effect transistor or of a transistor (201) designed as a charge-trap transistor, which is part of one of the memory cells (200a, 200d), and is configured toin at least one operating mode, providing an electrical resistance corresponding to the stored resistance characteristic value, wherein first contacts (104a) of the first contact pair of each of the two memory cells (200a, 200d) are directly connected to each other, and second contacts (106a, 106b) of the first contact pair (104a / 106a, 104a / 106b) of each of the two memory cells (200a, 200d) are electrically independent of each other, wherein the memory cells (200a, 200d) each have a second contact pair (108a / 109a, 108a / 109b) which is connected to a front-gate electrode of the transistor (201) and a back-gate electrode of the transistor (201), is electrically independent of the first contact pair (104a / 106a, 104a / 106b), and which is arranged such that by means of suitable electrical Signals via this second contact pair (108a / 109a, 108a / 109b) allow the stored electrical resistance characteristic of the respective
memory cell (200a, 200d) to be reversibly changed,at least the two memory cells (200) are each configured to be able to be switched between at least three different memory states by means of suitable electrical signals via the second contact pair (108 / 109).