119results about How to "Fast modulation" patented technology

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices / components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and / or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices / systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.

A modulated Class E transmitter is disclosed. In one embodiment of the invention, the modulated Class E oscillator achieves high coil currents (˜1 A) and voltages (˜500V) with low power components by precisely timed injection of current when the oscillating current in the inductor passes through zero. A detector circuit is used to trigger the current injection at the appropriate instant regardless of changes in the resonant frequency of the system. Its phase can be adjusted to compensate for propagation delays in the drive circuitry, while amplitude modulation is accomplished by switching in additional reactive conductance to increase the current injected into the tank circuit. Frequency modulation is accomplished in an alternate embodiment.

The invention specifies a radiation collimator, in particular an x-ray collimator, which can be arranged between a radiation source outputting radiation and an object. The radiation collimator includes absorber channels arranged adjacent to one another which form a two-dimensional collimator aperture in the form of a matrix and a first absorber element arranged in the absorber channel. The first absorber element blocks the radiation in a first position and allows the radiation at least partially through the absorber channel in at least one second position. The first absorber element is rod-shaped and can be moved in the absorber channel by a rotation about its longitudinal axis and / or by a longitudinal and / or transverse displacement from the first into the at least one second position. This is advantageous in that the two-dimensional collimator aperture can be modulated easily, rapidly and with high resolution.