Ultrashort pulse fiber laser based on WS2/graphene heterojunction

A graphene and heterojunction technology, applied in lasers, laser components, phonon exciters, etc., can solve the problems of ineffective compression of pulse width, weak single atomic layer light absorption, small modulation depth, etc. To achieve the effect of convenient operation, stable quality and stable performance

Inactive Publication Date: 2016-11-16
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] As a new type of two-dimensional material, graphene has been widely confirmed as a saturable absorber to generate ultrashort pulse laser, but the modulation depth of graphene is too small (~1.3%) due to the weak light absorption of single atomic layer.
WS 2 ,MoS 2 Such as graphene used a

Method used

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  • Ultrashort pulse fiber laser based on WS2/graphene heterojunction
  • Ultrashort pulse fiber laser based on WS2/graphene heterojunction
  • Ultrashort pulse fiber laser based on WS2/graphene heterojunction

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Embodiment 1

[0024] Step 1: Preparation of WS on quartz substrate by magnetron sputtering 2 film. Using WS 2 The polycrystalline block is used as the target material, the RF power is 60W, the argon gas pressure is 50Pa, the quartz substrate is heated to 200°C, and the deposition is continued for 10min. The film obtained by magnetron sputtering is placed in a tube furnace for heat treatment, and argon is used as a protective gas at a flow rate of 100 sccm. Place high-purity sulfur powder in the upstream low-temperature area, set the temperature at 200°C, and set the furnace center temperature at 800°C, keep it for 2 hours and then cool it down to room temperature naturally.

[0025] Step 2: Covering of graphene. The graphene grown on the copper substrate is cut into the required size and shape, and the surface is coated with a layer of 5% PMMA / anisole solution at a speed of 2000rpm for 30s, dried at 80°C, and then Soak it in a supersaturated solution of ammonium persulfate, etch away th...

Embodiment 2

[0029] Step 1: Preparation of WS on quartz substrate by magnetron sputtering 2 film. Using WS 2 The polycrystalline block is used as the target material, the RF power is 60W, the argon gas pressure is 50Pa, the quartz substrate is heated to 200°C, and the deposition is continued for 5min. The film obtained by magnetron sputtering is placed in a tube furnace for heat treatment, and argon is used as a protective gas at a flow rate of 100 sccm. Place high-purity sulfur powder in the upstream low-temperature area, set the temperature at 200°C, and set the furnace center temperature at 800°C, keep it for 2 hours and then cool it down to room temperature naturally.

[0030] Step 2: Covering of graphene. The graphene grown on the copper substrate is cut into the required size and shape, and the surface is coated with a layer of 5% PMMA / anisole solution at a speed of 2000rpm for 30s, dried at 80°C, and then Soak it in a supersaturated solution of ammonium persulfate, etch away the...

Embodiment 3

[0034] This embodiment provides a pulsed fiber laser, which includes a pump-based light source and a resonant cavity, and is characterized in that it also includes a WS 2 / graphene heterojunction thin film saturable absorber, the WS 2 The graphene heterojunction film saturable absorber is arranged on the gain fiber end face of the laser. The gain fiber is an ytterbium-doped fiber, the wavelength of the pump source is 980nm, and the center wavelength of the wavelength division multiplexer is 1064nm.

[0035] Wherein, the resonator is a ring cavity, including a wavelength division multiplexer, a gain fiber, a polarization-independent isolator, a polarization controller, a saturable absorber and a coupler connected in sequence to form a ring resonator; the pump light source and The input terminals of the wavelength division multiplexer are connected.

[0036] And the WS used in this embodiment 2 / The preparation of graphene heterojunction thin film saturable absorber comprise...

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Abstract

The invention provides a WS 2 A method for preparing a graphene heterojunction thin film, and a method for building a passively mode-locked fiber laser based on the heterojunction thin film. The method includes: First, a large area of ​​uniform WS 2 The films were prepared by magnetron sputtering, and then the graphene was transferred to |WS 2 thin film, forming WS 2 / graphene heterojunction, and then etched by strong alkali solution to obtain independent WS 2 /Graphene heterojunction thin film, which can be used as a saturable absorber to generate ultrashort pulse laser when placed in the optical fiber optical system. The present invention innovatively adopts WS 2 / graphene heterojunction films while overcoming WS 2 The passive mode-locked pulse width is not narrow enough and the graphene modulation depth is small, so that an ultrashort pulse fiber laser with a large modulation depth can be obtained.

Description

technical field [0001] The invention belongs to the technical field of passive mode-locked ultrafast fiber lasers, in particular to a large-area uniform WS 2 / Fabrication of graphene heterojunction saturable absorber films, and passively mode-locked fiber pulsed lasers based on this material. Background technique [0002] Ultrashort pulse (picosecond and femtosecond level) lasers, compared with traditional long pulse (microsecond and nanosecond level) lasers, basically do not cause any thermal damage to the surrounding materials during use. Therefore, ultrashort pulse laser has important research and application value in precision machining, surgical medical treatment, scientific research and other fields. In particular, ultrashort pulse fiber lasers have multiple advantages such as simple structure, stable light output performance, maintenance-free, and easy to carry, and have become the preferred high-tech tools for all walks of life. [0003] Passive mode-locking is a ...

Claims

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Application Information

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IPC IPC(8): H01S3/098H01S3/067
CPCH01S3/1118H01S3/06791
Inventor 陶丽丽李京波邹炳锁陈燚张荣兴
Owner GUANGDONG UNIV OF TECH
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