MoS2 saturable absorber film prepared through magnetron sputtering method, and corresponding ultrashort pulse fiber laser

A saturable absorption, fiber laser technology, applied in the field of passive mode-locked fiber lasers, can solve the problems of weak light absorption of single atomic layer and small modulation depth, and achieve the effects of stable pulse performance, large modulation depth and convenient operation.

Inactive Publication Date: 2016-11-16
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] As a new type of two-dimensional material, graphene has been widely confirmed as a saturable absorber to generate ultrashort pulse laser, but the modulation depth of graphene is too small (~1.3%) due to the weak light absorption of single atomic layer.

Method used

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  • MoS2 saturable absorber film prepared through magnetron sputtering method, and corresponding ultrashort pulse fiber laser
  • MoS2 saturable absorber film prepared through magnetron sputtering method, and corresponding ultrashort pulse fiber laser
  • MoS2 saturable absorber film prepared through magnetron sputtering method, and corresponding ultrashort pulse fiber laser

Examples

Experimental program
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Effect test

Embodiment 1

[0027] A kind of MoS 2 A film saturable absorber, the preparation method comprising the following steps:

[0028] (1)MoS 2 Thin Film Preparation: MoS on Quartz Substrates by Magnetron Sputtering 2 thin films, in which MoS 2 The polycrystalline block is used as the target material, the RF power is 20W, the argon gas pressure is 1Pa, the quartz substrate is heated to 50°C, and the deposition is continued for 20min;

[0029] (2)MoS 2 Thin film heat treatment: MoS prepared by step (1) magnetron sputtering 2 The film is heat-treated in a tube furnace with argon as a protective gas at a flow rate of 20 sccm; high-purity sulfur powder is placed in the upstream low-temperature zone, and the temperature is set at 50°C, and the furnace center temperature is set at 550°C, and the temperature is naturally lowered after 10 hours to room temperature;

[0030] (3)MoS 2 Stripping of the film: using a PMMA / anisole solution with a mass fraction of 2%, spin-coating the MoS after heat trea...

Embodiment 2

[0033] A kind of MoS 2 A film saturable absorber, the preparation method comprising the following steps:

[0034] (1)MoS 2 Thin Film Preparation: MoS on Quartz Substrates by Magnetron Sputtering 2 thin films, in which MoS 2 The polycrystalline block is used as the target material, the RF power is 100W, the argon gas pressure is 100Pa, the quartz substrate is heated to 300°C, and the deposition is continued for 1min;

[0035] (2)MoS 2 Thin film heat treatment: MoS prepared by step (1) magnetron sputtering 2 The film is heat treated in a tube furnace with argon as a protective gas at a flow rate of 100 sccm; high-purity sulfur powder is placed in the upstream low-temperature zone, and the temperature is set at 180°C, and the furnace center temperature is set at 850°C, and the temperature is naturally lowered after 1 hour to room temperature;

[0036] (3)MoS 2 Stripping of the film: using a PMMA / anisole solution with a mass fraction of 10%, spin-coat the MoS after the heat t...

Embodiment 3

[0039] A kind of MoS 2 A film saturable absorber, the preparation method comprising the following steps:

[0040] (1)MoS 2 Thin Film Preparation: MoS on Quartz Substrates by Magnetron Sputtering 2 thin films, in which MoS 2 The polycrystalline block is used as the target material, the RF power is 60W, the argon gas pressure is 50Pa, the quartz substrate is heated to 200°C, and the deposition is continued for 5min;

[0041] (2)MoS 2 Thin film heat treatment: MoS prepared by step (1) magnetron sputtering 2 The film is heat treated in a tube furnace with argon as a protective gas at a flow rate of 100 sccm; high-purity sulfur powder is placed in the upstream low-temperature zone, and the temperature is set at 200°C, and the furnace center temperature is set at 800°C, and the temperature is naturally lowered after 2 hours to room temperature;

[0042] (3)MoS 2 Stripping of the film: using a PMMA / anisole solution with a mass fraction of 5%, spin-coating the MoS after the hea...

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Abstract

MoS prepared by magnetron sputtering 2 Saturable absorber film and corresponding ultrashort pulse fiber laser, the invention provides a large area uniform MoS 2 thin film preparation method, and based on the MoS 2 Passively mode-locked fiber lasers constructed of thin films. The large-area uniform MoS 2 The film is prepared by magnetron sputtering, and then transferred to the optical fiber optical system as a saturable absorber to generate picosecond-level ultrashort pulse laser. MoS of the present invention 2 The saturable absorber film is evenly distributed, stable in quality, simple in preparation method, and can be industrialized. Based on the MoS 2 Ultrashort pulse laser performance of fiber laser with saturable absorber film is stable.

Description

technical field [0001] The invention belongs to the technical field of passive mode-locked fiber lasers, in particular to a large-area uniform MoS 2 Fabrication of Saturable Absorber Thin Films, and Passively Mode-Locked Fiber Pulse Lasers Based on the Materials. Background technique [0002] Ultrashort pulse (picosecond and femtosecond level) lasers, compared with traditional long pulse (microsecond and nanosecond level) lasers, basically do not cause any thermal damage to the surrounding materials during use. Therefore, ultrashort pulse laser has important research and application value in precision machining, surgical medical treatment, scientific research and other fields. In particular, ultrashort pulse fiber lasers have multiple advantages such as simple structure, stable light output performance, maintenance-free, and easy to carry, and have become the preferred high-tech tools for all walks of life. [0003] Passive mode-locking is a method that can be used to gene...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/098H01S3/067
CPCH01S3/1118H01S3/067
Inventor 陶丽丽李京波邹炳锁陈燚张荣兴
Owner GUANGDONG UNIV OF TECH
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